BST82 Search Results

BST82

Abstract: SMD TRANSISTOR MARKING BR BST82 TRANSISTOR Q 817 smd 4814 transistor smd marking dk smd transistor marking A1 SMD TRANSISTOR MARKING DE MSB003 02p SMD TRANSISTOR
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BST82 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor

02p SMD TRANSISTOR

Abstract: smd transistor marking TL BST82 TRANSISTOR transistor AY 6 smd TRANSISTOR SMD MARKING M Y R Y SMD TRANSISTOR TRANSISTOR SMD MARKING 2 HA sot23 02p BST82 transistor smd marking JR
Contextual Info: • bbSB'Ol 0023^5=1 SBM ■ APX N AMER PHILIPS/DISCRETE BST82 b?E D N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancem ent m ode vertical D -M O S tra nsistor in S O T 2 3 envelope and designed fo r use as Surface M o u n te d D evice S M D in th in and th ic k -film c irc u its fo r te lep hone ringer and fo r a p p lic a tio n

FET SOT23 60V

Abstract: BST82
Contextual Info: BST82 SOT23 N CHANNEL ENHANCEMENT IMODE VERTICAL DMOS FET BST82 IIssue 2 - October 1997 PARTMARKING DETAIL – O2 E C B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain Source Voltage V DS VALUE 80 UNIT V Drain Source Voltage non repetitive peak tp ≤ 2ms

BST82

Abstract: 02p SMD TRANSISTOR msa63 MBB692 MSB003 transistor smd marking dk BST82 TRANSISTOR
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BST82 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor

NE44

Contextual Info: BST82 mm Z e te x G m bH S treitfeld stra ße 19 D -81673 M ünchen T e lefo n: 49 89 4 5 4 9 49 0 Fax: (49) 89 45 4 9 4 9 49 Z e te x pic. Fields N e w Road, C had d erto n , O ldham , O L9 -8 N P , U nited Kingdom . Te lep ho n e: (44)161 -627 5 105 (Sales), (44)161 -627 4 9 6 3 (G eneral Enquiries)

FET SOT23 60V

Contextual Info: Not Recommended for New Design Please Use ZVN3310F BST82 SOT23 N CHANNEL ENHANCEMENT IMODE VERTICAL DMOS FET BST82 IIssue 2 - October 1997 PARTMARKING DETAIL – O2 E C B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain Source Voltage V DS VALUE 80 UNIT

Contextual Info: PART OBSOLETE - USE ZVN3310F BST82 SOT23 N CHANNEL ENHANCEMENT IMODE VERTICAL DMOS FET BST82 IIssue 2 - October 1997 PARTMARKING DETAIL – O2 E C B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain Source Voltage V DS VALUE 80 UNIT V Drain Source Voltage

02p SMD TRANSISTOR

Contextual Info: • bbS3131 002315=1 56H « A P X N AUER PHILIPS/DISCRETE BST82 b7E D y v . N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in SOT23 envelope and designed for use as Surface Mounted Device SMD in thin and thick-film circuits for telephone ringer and for application

BST82

Abstract: HZG303
Contextual Info: BST82 N-channel enhancement mode field-effect transistor Rev. 03 — 26 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BST82 in SOT23.

02p SMD TRANSISTOR

Abstract: BST82 BST82 SMD SMD TRANSISTOR MARKING DM sot23 02p
Contextual Info: BST82 A _ N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in SOT23 envelope and designed fo r use as Surface Mounted Device SMD in thin and thick-film circuits fo r telephone ringer and for application

Philips MARKING CODE

Abstract: sot23 02p 2N7002 MARKING 702 sot23 marking code m8p BSS84 MARKING CODE BSN20 MARKING marking pKX sot23 marking M8p 2N7002 PHILIPS SOT323 702 sot23
Contextual Info: Philips Semiconductors PowerMOS transistors Marking codes Types in SOT23, SOT89, and SOT323 packages are marked with a code as listed in the following table. TYPE NUMBER MARKING CODE BSN20 BSN20W M8p M8t BSS84 SP BSS87 BSS123 BSS192 KA SA BST80 BST82 KM 02p

Contextual Info: BST82 N-channel enhancement mode field-effect transistor Rev. 03 — 26 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BST82 in SOT23.

2N7002 MARKING 702

Abstract: 2n7002 MARKING 2N7002 PHILIPS MARKING BSS84 MARKING CODE marking 702 sot23 Philips MARKING CODE BSN20 MARKING sot23 02p PMBF170 pkx codes marking 2N7002
Contextual Info: Philips Semiconductors PowerMOS transistors Marking codes Types in SOT23, SOT89, and SOT323 packages are marked with a code as listed in the following table. TYPE NUMBER MARKING CODE BSN20 M8p BSN20W M8t BSS84 SP BSS87 KA BSS123 SA BSS192 KB BST80 KM BST82

NX3008NBKMB

Abstract: BSS138BK BSS84AKS PMV48XP BSH201 2N7002PW nx2301 PMPB27XP PMF170XP 2N7002PS
Contextual Info: Small-signal MOSFET Selection Guide Broad selection of small-signal MOSFETs for a wide range of applications Our advanced MOSFET solutions deliver the flexibility and performance that today´s market demands. Choose from a wide range of general-purpose MOSFET solutions, available in a variety

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

sot23 marking M6p

Abstract: PMBFJ111 PMBFJ174
Contextual Info: Philips Semiconductors Marking codes Small-signal Field-effect Transistors Types in SOT23, SOT89, SOT143 and SOT343 envelopes are marked with a code as listed in the following tables. TYPE NUM BER M A R K IN G CODE M A R K IN G TYPE NUMBER CODE TYPE NUM BER

sot-23 MARKING CODE ZA

Abstract: b0808 BCB47B BCB17-16 marking za sot89 2SB0151K marking k5 sot89 SOT 86 MARKING E4 n33 SOT-23 10Y sot-23
Contextual Info: SURFACE-MOUNTED DEVICE MARKINGS Because of their smali size, it's not possible to show types/ values on most surface-mounted components. The following tables show the code markings used to identify most common surface-mounted transistors and diodes. Note that the same

circuit diagram wireless spy camera

Abstract: PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143
Contextual Info: Discrete Semiconductors Selection Guide 2014 Protection and signal conditioning devices, diodes, bipolar transistors, MOSFETs and thyristors. NXP’s next generation of packaging DFN Discrete Flat No-lead packages – high performance on smallest footprint

smd code book

Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
Contextual Info: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ

PHD78NQ

Abstract: BUK9507-30B BUK7608-40B PHB27NQ10T PHP18NQ10T ph43 PHD66NQ03LT BUK9575-100A PHP45NQ10TA si2302ds
Contextual Info: Power MOSFET Selection Guide 2009 Smaller, faster, cooler Table of contents 12 V – 25 V N-channel MOSFETs ������������������������������������������������������������������������������������������������������������ 4

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A

BPW22A

Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey

02p SMD TRANSISTOR

Abstract: sot23 02p BST82 smd transistor marking TL MBB076
Contextual Info: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor DESCRIPTION N -channel enhan ce m e n t mode vertical D -M O S tra n sisto r in S O T23 envelope and designed fo r use as S urface M ounted D evice SM D in

mosfet cross reference

Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
Contextual Info: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is