03AB44 Search Results

BSN20

Abstract: HZG303
Contextual Info: BSN20 N-channel enhancement mode field-effect transistor Rev. 03 — 26 June 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSN20 in SOT23.

03aa03

Contextual Info: PMBF170 N-channel enhancement mode field-effect transistor Rev. 03 — 23 June 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: PMBF170 in SOT23.

BST82

Abstract: HZG303
Contextual Info: BST82 N-channel enhancement mode field-effect transistor Rev. 03 — 26 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BST82 in SOT23.

BSN20

Contextual Info: BSN20 N-channel enhancement mode field-effect transistor Rev. 03 — 26 June 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSN20 in SOT23.

2N7002 Philips

Abstract: 03aa03 philips 2n7002
Contextual Info: 2N7002 N-channel enhancement mode field-effect transistor Rev. 03 — 27 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: 2N7002 in SOT23.

2N7002F

Abstract: SP SOT23 2N7002* application
Contextual Info: 2N7002F TrenchMOS Logic Level FET Rev. 01 — 11 February 2002 Product data M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: 2N7002F in SOT23. 2. Features

philips 2n7002e

Contextual Info: 2N7002E TrenchMOS Logic Level FET Rev. 01 — 11 February 2002 Product data M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: 2N7002E in SOT23. 2. Features

BSH112

Contextual Info: BSH112 N-channel enhancement mode field-effect transistor Rev. 01 — 25 August 2000 Product specification M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSH112 in SOT23.

Contextual Info: BST82 N-channel enhancement mode field-effect transistor Rev. 03 — 26 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BST82 in SOT23.