2N7002E Search Results

2N7002ESGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD 2N7002ESGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 115 mAmpere APPLICATION * Relay driver * High speed line driver * Logic level transistor SOT-23 3 (2) .055 (1.40) .047 (1.20)

2N7002EGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD 2N7002EGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 115 mAmpere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-70/SOT-323 FEATURE

2N7002ELT

Abstract: 2N7002ELT1
Contextual Info: WILLAS FM120-M+ 2N7002ELT1 THRU FM1200-M+ Small Signal MOSFET 310 mAmps, 60 Volts 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers

k7b transistor

Contextual Info: 2N7002E N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • · · · · Low On-Resistance: RDS ON Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage SOT-23 A D B Mechanical Data · · · ·

2N7002E

Abstract: 2N7002EW
Contextual Info: 2N7002E Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (mA) 60 3 @ VGS = 10 V 240 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers,

Contextual Info: 2N7002E N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) max ID max TA = 25°C 60V 3Ω @ VGS = 10V 300mA • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed

2N7002E

Abstract: 2N7002E-T1
Contextual Info: 2N7002E Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (mA) 60 3 @ VGS = 10 V 240 FEATURES D D D D D BENEFITS Low On-Resistance: 3 W Low Threshold: 2 V (typ) Low Input Capacitance: 25 pF Fast Switching Speed: 7.5 ns Low Input and Output Leakage

2N7002ET1G

Abstract: 2N7002E PF401
Contextual Info: 2N7002E Small Signal MOSFET 60 V, 310 mA, Single, N−Channel, SOT−23 Features • • • • Low RDS on Small Footprint Surface Mount Package Trench Technology These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com

marking 7E SOT-23 Diode

Abstract: marking code vishay SILICONIX sot-23
Contextual Info: 2N7002E Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (mA) 60 3 at VGS = 10 V 240 • Halogen-free According to IEC 61249-2-21 Definition • Low On-Resistance: 3  • • • • Low Threshold: 2 V (typ.)

417 TRANSISTOR

Abstract: 2N7002E
Contextual Info: MOSFET SMD Type N-Channel Enhanceent Mode Field Effect Transistor 2N7002E SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 Low Input Capacitance 0.55 Low Gate Threshold Voltage +0.1 1.3-0.1 +0.1 2.4-0.1 Low On-Resistance: RDS ON 0.4 3 2 +0.1 0.95-0.1

2N7002ET1G

Abstract: 2N7002E
Contextual Info: 2N7002E Small Signal MOSFET 60 V, 310 mA, Single, N−Channel, SOT−23 Features • • • • Low RDS on Small Footprint Surface Mount Package Trench Technology This is a Pb−Free Device http://onsemi.com V(BR)DSS RDS(on) MAX ID MAX (Note 1) 60 V 3.0 W @ 4.5 V

2N7002ET1G

Abstract: 2N7002E
Contextual Info: 2N7002E Small Signal MOSFET 60 V, 310 mA, Single, N−Channel, SOT−23 Features • • • • Low RDS on Small Footprint Surface Mount Package Trench Technology This is a Pb−Free Device http://onsemi.com V(BR)DSS RDS(on) MAX ID MAX (Note 1) 60 V 3.0 W @ 4.5 V

2N7002E

Contextual Info: 2N7002E N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • • • • • • Mechanical Data • • • • • Low On-Resistance: RDS ON Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage

2N7002E

Abstract: 2N7002E-7 2N7002E-7-F
Contextual Info: SPICE MODEL: 2N7002E 2N7002E N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • · · · · · Low On-Resistance: RDS ON SOT-23 Low Gate Threshold Voltage Dim Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 E 0.45 0.60 G 1.78

2N7002E

Abstract: 2N7002E-7-F J-STD-020D "igss 10 na"
Contextual Info: 2N7002E N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. NEW PRODUCT Features • • • • • • Mechanical Data • • • • • Low On-Resistance: RDS ON Low Gate Threshold Voltage Low Input Capacitance

2N7002EW

Contextual Info: 2N7002E Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (mA) 60 3 @ VGS = 10 V 240 FEATURES D D D D D BENEFITS Low On-Resistance: 3 W Low Threshold: 2 V (typ) Low Input Capacitance: 25 pF Fast Switching Speed: 7.5 ns Low Input and Output Leakage

2N7002E

Abstract: 2N7002E-7-F
Contextual Info: 2N7002E N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • • • • • • • • • • Low On-Resistance: RDS ON Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant "Green"

2N7002ESEGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD 2N7002ESEGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 115 mAmpere APPLICATION * Relay driver * High speed line driver * Logic level transistor SC-70/SOT-323 FEATURE 3 * Rugged and reliable.

2N7002E

Abstract: 2N7002E-T1
Contextual Info: 2N7002E Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (mA) 60 3 @ VGS = 10 V 240 FEATURES D D D D D BENEFITS Low On-Resistance: 3 W Low Threshold: 2 V (typ) Low Input Capacitance: 25 pF Fast Switching Speed: 7.5 ns Low Input and Output Leakage

2N7002E

Contextual Info: SPICE Device Model 2N7002E Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Siliconix

Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
Contextual Info: Analog Discrete Interface & Logic Optoelectronics MOSFET Small Package Cross Reference 2003 Across the board. Around the world. MOSFET Small Package Cross Reference Guide Competitor Part Number 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123

2N7002E siliconix

Abstract: 2N7002E 2N7002EW WL MARKING CODE VISHAY sot23 marking code WL sot23
Contextual Info: 2N7002E Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY Vds(V) r D S (o n ) ( Q ) l0(mA) 60 3 @ V q s = 10 V 240 FEATURES BENEFITS APPLICATIONS • • • • • • • • • • Direct Logic-Level Interface: TTL/CMOS • Drivers: Relays, Solenoids, Lamps, Hammers,

Contextual Info: MOSFET IC DIP Type SMD Type Type Product specification 2N7002E SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 Low Input Capacitance 0.55 Low Gate Threshold Voltage +0.1 1.3-0.1 +0.1 2.4-0.1 Low On-Resistance: RDS ON 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1

2N7002E

Abstract: 60VMOSFET 304 MOSFET N-CHANNEL 60V
Contextual Info: 2N7002E N-Channel 60V MOSFET Features: Surface-mounted package BVDSS=60V , Advanced trench cell design Extremely low threshold voltage ESD protected HBM ≧ 2KV RDS(ON)≦3Ω@VGS=10V RDS(ON)≦4Ω@VGS=4.5V ID=0.43A Application Portable appliances Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)