BSS192 Search Results

Contextual Info: 32E D • ö23b3S0 ' SIPMOS P Channel MOSFET QQ17177 1 « S IP ^ BSS192 SIEMENS/ SPCL-i SEMICONDS_ _ • SIPMOS - enhancement mode • Draln-source voltage Vb» = -240V • Continuous drain current / D = -0.15A • Draln-source on-resistance

Contextual Info: BSS192P SIPMOS Small-Signal-Transistor Feature Product Summary • P-Channel VDS • Enhancement mode RDS on • Logic Level ID • dv/dt rated -250 V 12 Ω -0.19 A PG-SOT89 • Qualified according to AEC Q101 • Halogen­free according to IEC61249­2­21

bss 108

Contextual Info: BSS192P SIPMOS Small-Signal-Transistor Feature Product Summary • P-Channel VDS • Enhancement mode RDS on • Logic Level ID • dv/dt rated -250 V 12 Ω -0.19 A PG-SOT89 1 Drain pin 2 • Qualified according to AEC Q101 2 3 Gate pin1 Source pin 3

E7F-L

Abstract: BSS192 transistor c90 MARKING zss TRANSISTOR Scans-0047197
Contextual Info: b7E » bbSS'ìBI □ 0 2 3 cìScì Ô47 IAPX Philips Semiconductors Data sheet status Product specification date of issue July 1993 BSS192 P-channel enhancement mode vertical D-MOS transistor N AMER PHILIPS/DISCRETE FEATURES Direct interface to C-MOS, TTL,

qs marking sot-89

Contextual Info: SIEMENS BSS192 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • ^GS th = -0.8.-2.0 V Type b ^DS(on) Package Marking -0.15 A 20 ß SOT-89 KB BSS 192 Vbs -240 V Type BSS 192 Ordering Code Q62702-S634 Tape and Reel Information

Contextual Info: BSS192 P SIPMOS Small-Signal-Transistor Feature Product Summary • P-Channel VDS • Enhancement mode RDS on • Logic Level ID • dv/dt rated -250 V 12 Ω -0.19 A PG-SOT89 • Pb-free lead plating; RoHS compliant 1 Drain pin 2 2 3 Gate pin1 Source

DK 53 code transistor

Abstract: BSS192 MDA17
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BSS192 P-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of July 1993 File under Discrete Semiconductors, SC13b 1997 Jun 20 Philips Semiconductors Product specification P-channel enhancement mode

Contextual Info: BSS192 In fin e o n technologie» SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • ^GS th = -0.8.-2.0 V Type Vbs fc flDS<on) Package Marking BSS 192 -240 V -0.15 A 20 n SOT-89 KB Typ« BSS 192 Ordering Code Q62702-S634

Philips MARKING CODE

Abstract: sot23 02p 2N7002 MARKING 702 sot23 marking code m8p BSS84 MARKING CODE BSN20 MARKING marking pKX sot23 marking M8p 2N7002 PHILIPS SOT323 702 sot23
Contextual Info: Philips Semiconductors PowerMOS transistors Marking codes Types in SOT23, SOT89, and SOT323 packages are marked with a code as listed in the following table. TYPE NUMBER MARKING CODE BSN20 BSN20W M8p M8t BSS84 SP BSS87 BSS123 BSS192 KA SA BST80 BST82 KM 02p

BSS192

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BSS192 P-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 Jun 20 2002 May 22 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor

Contextual Info: SO T8 9 BSS192 240 V, P-channel vertical D-MOS transistor 12 December 2014 Product data sheet 1. General description P-channel enhancement mode vertical Double-Diffused Field-Effect Transistor DMOSFET in a SOT89 (SC-62) medium power and flat lead Surface Mounted Device

transistor a200

Contextual Info: DISCRETE SEMICONDUCTORS DAT book, halfpage M3D109 BSS192 P-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 Jun 20 2002 May 22 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor

2N7002 MARKING 702

Abstract: 2n7002 MARKING 2N7002 PHILIPS MARKING BSS84 MARKING CODE marking 702 sot23 Philips MARKING CODE BSN20 MARKING sot23 02p PMBF170 pkx codes marking 2N7002
Contextual Info: Philips Semiconductors PowerMOS transistors Marking codes Types in SOT23, SOT89, and SOT323 packages are marked with a code as listed in the following table. TYPE NUMBER MARKING CODE BSN20 M8p BSN20W M8t BSS84 SP BSS87 KA BSS123 SA BSS192 KB BST80 KM BST82

PG-SOT89

Abstract: BSS192P
Contextual Info: BSS192P SIPMOS Small-Signal-Transistor Feature Product Summary • P-Channel VDS • Enhancement mode RDS on • Logic Level ID • dv/dt rated -250 V 12 Ω -0.19 A PG-SOT89 1 Drain pin 2 • Qualified according to AEC Q101 2 3 Gate pin1 Source pin 3

prtr5v0u6s

Abstract: csp1040 TSSOP20 FOOTPRINT ip4065cx11 smd transistor GY sot89 IP4065CX11/LF BV 9y transistor smd IP4058CX8/LF IP4280CZ10 smd transistor GY
Contextual Info: Dark Green − NXP‘s transfer to halogen-free products Why Dark Green? We as NXP are deeply committed to developing eco-friendly products and integrating environmental safety aspects in all manufacturing processes. For our packaging technology this meant a shift to lead-free and halogen-free “Dark Green”, years

S 170 MOSFET TRANSISTOR

Abstract: 8203 dual mosfet S 170 MOSFET SOT323 MOSFET P MOSFET SWITCHING FREQUENCY IPS09N03LA P-channel power mosfet SO-8 TDA21102 mosfet all mosfet equivalent book
Contextual Info: Low Voltage ICs – Discretes: OptiMOS , OptiMOS ®2 Power Management & Supply DC/DC Selection Guide www.infineon.com/power May 2006 Introduction D C / D C C O N V E R S I O N plays a critical role in today’s applications such as desktop and notebook computers, consumer equipment, e.g. DVD players and

sot23 marking M6p

Abstract: PMBFJ111 PMBFJ174
Contextual Info: Philips Semiconductors Marking codes Small-signal Field-effect Transistors Types in SOT23, SOT89, SOT143 and SOT343 envelopes are marked with a code as listed in the following tables. TYPE NUM BER M A R K IN G CODE M A R K IN G TYPE NUMBER CODE TYPE NUM BER

Contextual Info: b?E ]> bb53T31 0 Q 2 3 C12C1 647 « A P X Philips Semiconductors Data sheet status P ro d u c t s p e c ific a tio n date of issue July 1993 _ FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown.

SP126

Contextual Info: SURFACE MOUNT TRANSISTORS AND DIODES • A pioneer in Surface Mount products, Philips invented the SOT-23 industry standard SM package. Offering full expertise and innovation in Surface Mount technology, Philips has introduced the newest medium-power one-watt

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Abstract: PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143
Contextual Info: Discrete Semiconductors Selection Guide 2014 Protection and signal conditioning devices, diodes, bipolar transistors, MOSFETs and thyristors. NXP’s next generation of packaging DFN Discrete Flat No-lead packages – high performance on smallest footprint

igbt welding machine scheme

Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
Contextual Info: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and

BSS87

Abstract: BSP315 SOT223 BSP171 BSS125
Contextual Info: SIPMOS For complete package outlines, refer to pages PO-1 through PO-6 Low Power MOSFETs Type M axim um Ratings N = N Channel P = P Channel BSP17 BSP88 BSP89 BSP92 BSP 125 BSP129* BSP135* BSP149* BSP171 BSP295 BSP296 BSP297 BSP298 BSP299 BSP315 BSP316 BSP317

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A

3bs02

Abstract: 2bs01 08P06P TDA 16888 ICE2pcs02 tda16846 ICE3B1565J mosfet 18p06p TDA4605 ICE3B0365J
Contextual Info: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Selection Guide www.infineon.com/powermanagement Introduction I n f i n e o n ’ s P o w e r S e mi c o n d u c t o r p h i l o s o p h y is rather