BCW89 Search Results

Contextual Info: DISCRETE SEMICONDUCTORS DAT ook, halfpage M3D088 BCW89 PNP general purpose transistor Product data sheet Supersedes data of 1997 Mar 11 1999 Apr 15 NXP Semiconductors Product data sheet PNP general purpose transistor BCW89 PINNING FEATURES • Low current max. 100 mA

ic 810

Abstract: IC 810 datasheet MARKING SMD PNP TRANSISTOR BCW89
Contextual Info: Transistors IC SMD Type PNP General Purpose Transistors BCW89 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 Low voltage max. 60 V . +0.1 1.3-0.1 +0.1 2.4-0.1 Low current (max. 100 mA). 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1

Contextual Info: •I bb53131 00245^5 *APX N AUER PHILIPS/DISCRETE BCW89 b?E D SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, in a microminiature plastic envelope, intended for low level general purpose appli­ cations in thick and thin-film circuits. QUICK REFERENCE DATA

BCW89

Contextual Info: CDIIL BCW89 SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistors M arkin g BCW89 = H3 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.14 0.48 0.38 ^ p I0 9 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 _1.02 0.89" 2.00 0.60 0.40

BCV72

Abstract: BCW29 BCW30 BCW89 BCW89R BFQ31 BFQ31A BFS20 1G t 90 SOT-23 ferranti
Contextual Info: It I!semiconductors FERRANTI L BCW89 P N P S ilico n Planar Sm all S ig n a l Transistors! DESCRIPTION This device is applications. intended for low level, general purpose Encapsulated in the popular SOT-23 package the device is designed specifically for use in thin and thick film hybrid

smd LB 012

Abstract: BCW89
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW89 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BCW89 = H3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW89 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transisto rs Marking BCW89 = H3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3

Contextual Info: BCW89 w w w. c e n t r a l s e m i . c o m SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BCW89 is a Silicon PNP Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose applications.

Contextual Info: Philips Semiconductors Product specification PNP general purpose transistor BCW89 FEATURES PINNING • Low curren t max. 100 mA PIN • Low voltage (max. 60 V). APPLICATIONS DESCRIPTION 1 base 2 em itter 3 collector • G eneral purpose sw itching and am plification.

BCW89

Abstract: BCW89R transistor h6 DS55
Contextual Info: SOT23 PIMP SILICON PLANAR SMALL SIGNAL TRANSISTOR BCW89 PARTMARKING DETAILS:EÎCW89 - H3 BCW89R - H6 ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage lc = -2mA Emitter-Base Voltage Collector Current

2SA1283D

Abstract: bcw56a Motorola 2N3809 LOW-POWER SILICON PNP TO77
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 5 10 BC303-6 BC303-6 2N3579 KT214Gl BCW89 BCW89 BCW89 BCW89R BCW89R BCW89R ~~XIJ2A -15 20 25 30 - 35 40 2N4413A BSR30 BSR30 BCW56A PB6014S 2SBll16AL BC488A18 BC488A5 -SO 60 70 -80 85 -90 95 ~eelnClex See Index

ic 810

Abstract: BCW89 BCV71 BCW69 BCW70 MARKING H1 BCW89 kec
Contextual Info: SEMICONDUCTOR BCW69/70/89 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E B L L FEATURES For Complementary with NPN Type BCW71/72, BCV71. H Voltage BCW89 Collector-Emitter BCW69/70 Voltage BCW89 VCBO -50

Contextual Info: SILICON PLANAR EPITAXIAL TRANSISTORS P-KJ-P transistors Marking BCW89 = H3 PA CKA GE OU TLINE DETAILS A LL DIM ENSIO NS IN mm O .U Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter Collector-emitter voltage (open base)

BCW89

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 BCW89 PNP general purpose transistor Product data sheet Supersedes data of 1997 Mar 11 1999 Apr 15 NXP Semiconductors Product data sheet PNP general purpose transistor BCW89 FEATURES PINNING • Low current max. 100 mA

Contextual Info: SEMICONDUCTOR BCW69/70/89 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E B L L FEATURES 2 H A 3 G For Complementary with NPN Type BCW71/72, BCV71. 1 P Collector-Base BCW69/70 Voltage BCW89 -60 Collector-Emitter

Contextual Info: SURFACE MOUNT CATALOGUE SOT 23 CERAMIC LCC PNP GENERAL PURPOSE PNP RATINGS DEVICE BCW69 BCW70 BCW89 BCX17 BCX18 BCX71G BCX71H BCX71J BCX71K NEBTA55 NEBTA56 NEBTA70 NEBT2907 NEBT2907A NEBT3906 NEBT4403 hFE VCE SAT fT VCEO IC min/max@IC/VCEO max V@IC/IB typ

BCW89

Contextual Info: •I bbSBiai 00245^5 ÔÛS M A R X N AMER PHILIPS/DISCRETE BCW89 b7E D SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, in a m icrominiature plastic envelope, intended fo r low level general purpose appli­ cations in thick and thin -film circuits.

Contextual Info: BCW89 CDU SILICON PLANAR EPITAXIAL TRANSISTORS P-N -P transistors Marking BCW89 = H3 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm O .H 0.70 0.50 "11.4 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 1.2 R0.1 ööö+T j f S »W-05 0.12 0.02 ABSOLUTE MAXIMUM RATINGS

MAM256

Abstract: KJ sOT23
Contextual Info: Philips Semiconductors Product specification PNP general purpose transistor BCW89 FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 60 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • General purpose switching and amplification.

Contextual Info: Transistors IC SMD Type Product specification BCW89 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 Low voltage max. 60 V . +0.1 1.3-0.1 +0.1 2.4-0.1 Low current (max. 100 mA). 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1

BCW89

Abstract: H5 MARKING
Contextual Info: SEMICONDUCTOR BCW89 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 H5 1 2 Item Marking Description Device Mark H5 BCW89 hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW89 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BCW89 = H3 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration

BCW89

Abstract: BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 BCW89 PNP general purpose transistor Product specification Supersedes data of 1997 Mar 11 1999 Apr 15 Philips Semiconductors Product specification PNP general purpose transistor BCW89 FEATURES PINNING

BCW89

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BCW89 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BCW89 = H3