MPS5179 Search Results

MPS517

Abstract: MPS5179 MPS5179G MPS5179RLRA MPS5179RLRAG MPS5179RLRP MPS5179RLRPG Marking code mps
Contextual Info: MPS5179 Preferred Device High Frequency Transistor NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 12 Vdc Collector −Base Voltage VCBO 20

1N3195

Abstract: MPS5179
Contextual Info: MOTOROLA Order this document by MPS5179/D SEMICONDUCTOR TECHNICAL DATA High Frequency Transistor MPS5179 NPN Silicon Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 12 Vdc

Contextual Info: MPS5179 Preferred Device High Frequency Transistor NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 12 Vdc Collector −Base Voltage VCBO 20

Contextual Info: MPS5179 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)12 V(BR)CBO (V)20 I(C) Max. (A)50m Absolute Max. Power Diss. (W)200m’ Minimum Operating Temp (øC)-55õ Maximum Operating Temp (øC)150õ I(CBO) Max. (A)20n @V(CBO) (V) (Test Condition)15

bf282

Abstract: mps51
Contextual Info: S E M IC O N D U C T O R tm / MMBT5179 / PN5179 MPS5179 PN5179 MMBT5179 SOT-23 Mark: 3C NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 |^A to 30 m A range in common em itter or comm on base m ode of operation, and in low frequency

TRANSISTOR C 3223

Abstract: TRANSISTOR C 1177 BT5179 NPN power transistor spice
Contextual Info: Sáfe:-O O W :Oí •v MPS5179 MMBT5179 NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 |uA to 30 m A range in common em itter or common base m ode of operation, and in low frequency drift, high ouput UHF oscillators. Sourced from Process 40.

Contextual Info: ON Semiconductort High Frequency Transistor MPS5179 NPN Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 12 Vdc Collector −Base Voltage VCBO 20 Vdc Emitter −Base Voltage VEBO 2.5 Vdc Collector Current — Continuous

Contextual Info: ON Semiconductort High Frequency Transistor MPS5179 NPN Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 12 Vdc Collector–Base Voltage VCBO 20 Vdc Emitter–Base Voltage VEBO 2.5 Vdc Collector Current — Continuous

g300 rev 2.0

Abstract: SL 100 NPN Transistor PN5179 transistor rc4 MMBT5179 MPS5179 TRANSISTOR C 3223
Contextual Info: MICQNDUCTGR i MPS5179 PN5179 MMBT5179 NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 piA to 30 mA range in common em itter or comm on base mode of operation, and in low frequency drift, high ouput UHF oscillators. Sourced from Process 40.

Contextual Info: Small Signal RF/VHF/UHF Transistors Part No. Polarity VCEO V 2N5770 MPS5179 MPSH10 MPSH11 PN3563 PN918 NPN 15 12 25 25 15 15 fT Min. @ Max. (MHz) (MHz) 900 900 650 650 600 600 1800 2000 1500 1500 VCE & IC VCE IC Cob Max. (V) (mA) (pF) 6 10 10 10 - 8 5 4

BC237

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Frequency Transistor MPS5179 NPN Silicon Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 12 Vdc Collector – Base Voltage VCBO

common emitter amplifier

Abstract: MPS5179 LS012
Contextual Info: SAMSUNG SEMICONDUCTOR 146 O | 711,4145 0007325 5 | INC MPS5179 NPN EPITAXIAL SILICON TRANsSc t & R ^ HIGH FREQUENCY TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic Collector-Base Voltage CoHector-Emitter Voltage Emitter-Base Voltage Collector Current

transistor rc4

Abstract: MMBT5179 MPS5179
Contextual Info: MPS5179 I MMBT5179 ^ Discrete POWER & Signal Technologies National S em icon ducto r ~ MPS5179 MMBT5179 E M a rk : 3C NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents In the 100 nA to 30 mA range in common

KA8402

Abstract: KA8403 KA2981 KA8119 KS5410 Ka2185 KA7007 KA2184 KA2982 ka2913a
Contextual Info: APPLICATION GUIDE 2. VIDEO APPLICATION 2.1 T u n e r fo r T V Xy ANT RF AMP MIXER L/C OSC. VHF KSC1393 KSC2755 UHF KSC2758 KSC1070 KSC1394 KSC2756 KSC3120 MPSH24 MPSH20 MMBTH24 KSC1730 KSC2757 KSC2759 K SC 31 2 1 KSC3867 MPSH10 MPSH1 1 MPS5179 MMBTH10 2 .2 L in e a r IC for B /W T V

MPS5179

Abstract: MPS5179 small signal transistor 8-NP S00406
Contextual Info: NPN SILICON PLANAR HIGH FREQUENCY TRANSISTOR MPS5179 MPS5179 ISSUE 2 – FEB 1994 FEATURES * HIGH fT=900MHz MIN * MAX CAPACITANCE=1pF * LOW NOISE 5dB APPLICATIONS * CORDLESS TELEPHONES * KEYLESS ENTRY SYSTEMS * WIDEBAND INSTRUMENTATION AMPLIFIERS * TELEMETRY

MPS5179

Abstract: TRANSISTOR C 3223 MPS5179 small signal transistor MMBT5179 PN5179
Contextual Info: MPS5179 PN5179 MMBT5179 C E C B TO-92 SOT-23 E C B E Mark: 3C TO-92 B NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 µA to 30 mA range in common emitter or common base mode of operation, and in low frequency

TO226AA

Abstract: 226AA msc2295 P2N2222A MPS3904
Contextual Info: Bipolar Transistors RF Transistors NPN PNP V BR CEO IC mA Max Min hFE Max fT MHz Min Cap pF Max CRB = 0.65 CRE = 0.65 MPSH10 − 25 − 60 − 650 BF959 − 20 100 40 − 600 MPSH17 MPS918 MPS5179 MPS3563 MMBTH10LT1 − − − − 15 15 12 12 − 50 50 50

MPS5179

Contextual Info: ON Semiconductort High Frequency Transistor MPS5179 NPN Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 12 Vdc Collector–Base Voltage VCBO 20 Vdc Emitter–Base Voltage VEBO 2.5 Vdc Collector Current — Continuous

pn5179

Abstract: MMBT5179 TF135 1/MPS5179
Contextual Info: MPS5179 / MMBT5179 / PN5179 MPS5179 PN5179 MMBT5179 C E C B TO-92 C B SOT-23 E E Mark: 3C TO-92 B NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 mA to 30 mA range in common emitter or common base mode of operation, and in low frequency

1N3195

Contextual Info: MPS5179* CASE 29-04, STYLE 1 TO-92 TO-226AA M AXIM UM RATINGS Symbol Value Unit Collector-Emitter Voltage VCEO 12 Vdc Collector-Base Voltage VCBO 20 Vdc Emitter-Base Voltage vebo 2.5 Vdc Collector Current — Continuous <C 50 m Adc Total Device Dissipation (a T ^ = 25°C

Contextual Info: MPS5179* CASE 29-04, STYLE 1 TO-92 TO-226AA M AXIM UM RATINGS Rating Symbol Value Unit C o lle c to r -E m itte r V o lta g e v CE0 12 Vdc C o lle c to r-B a s e V o lta g e VcBO 20 Vdc E m itte r-B a s e V o lta g e v EBO 2.5 V dc 'c 50 m Adc T / \ = 2 5 5C

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

MC13109FB

Abstract: y0007 DL128 HA 1115 audio compressor expander IC 8 pin MC13109 datasheet 1N5140 848B AN1575 Nippon capacitors
Contextual Info: Order this document by MC13109/D MC13109 Universal Cordless Telephone Subsystem IC UNIVERSAL CT–1 SUBSYSTEM INTEGRATED CIRCUIT The MC13109 integrates several of the functions required for a cordless telephone into a single integrated circuit. This significantly reduces

MMBT5770

Abstract: KSC2223 KSC2756 KSC2757 KSC3123 KST10 KST5179 MMBT5179 MMBT918 MMBTH10
Contextual Info: Discrete Small Signal RF Products VCEO V VCBO (V) VEBO (V) IC fT hFE Max (A) (MHz) Min Max @VCE (V) Saturation Voltage @IC (mA) VCE (sat) (V) @IC (mA) @IB (mA) SOT-23 NPN Configuration KST5179 12 20 2.5 0.05 900 25 - 1 3 0.4 10 1 MMBT5179 12 20 2.5 0.05