MPS51 Search Results

2n2222 to-92

Abstract: 2N4970 MPS3393 2N2219 transistor PN2218 2n2222 to92 2N4954 FR 9024 MMBT3704 PN2219
Contextual Info: NATL SEMICOND DISCRETE H2E D M T -Z l-ai t,SD1130 0D37772 3 • NPN General Purpose Transistors by Ascending Vceo (continued) Part Type MPS3393 MPS3394 MPS3395 MPS3396 MPS3397 MPS3398 MPS5172 MPS6515 MPS6520 MPS6521 MPS6522 MPS6560 PE4010 PE8050 PN3565 PN5135

MPS517

Abstract: MPS5179 MPS5179G MPS5179RLRA MPS5179RLRAG MPS5179RLRP MPS5179RLRPG Marking code mps
Contextual Info: MPS5179 Preferred Device High Frequency Transistor NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 12 Vdc Collector −Base Voltage VCBO 20

MPS5172

Abstract: MPS 5172
Contextual Info: MPS5172 General Purpose Transistor NPN Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO 25 Vdc Collector−Base Voltage VCBO 25 Vdc Emitter−Base Voltage VEBO 5.0 Vdc Collector Current − Continuous IC 100

MPSA10

Abstract: MPS5172 MPS-A10 NPN Transistor TO92 25v
Contextual Info: SAMSUNG SEMICONDUCTOR INC MPS5172 IME D | 7 * lb M m 2 0007321 | NPN EPITAXIAL SILICON TRANSISTOR'7 AMPLIFIER TRANSISTÖR • Collector-Emitter Voltage: Veto =25V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic

PA6015A

Abstract: 2n2570 KT3101A-2 BF250 SG119 2N1269 2SC1071 2S078 LOW-POWER SILICON NPN PA6015
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 2Nl199A 2N770 2N770 2N3511 2N918 2N1268 2N1271 2N1139 2N728 FMMT2369 2N2~t U 15 20 2N1006 2Nl199 PN5131 PN5131 PN5131 2N476 2N1417 2N1663 2N5131 ~~~~~ 25 30 2N771 MPS5131 MPS5131 AST5220 2N5220 BF250 04024 A5T5219

1N3195

Abstract: MPS5179
Contextual Info: MOTOROLA Order this document by MPS5179/D SEMICONDUCTOR TECHNICAL DATA High Frequency Transistor MPS5179 NPN Silicon Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 12 Vdc

MPS 5172

Abstract: MPS5172
Contextual Info: MPS5172 General Purpose Transistor NPN Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO 25 Vdc Collector−Base Voltage VCBO 25 Vdc Emitter−Base Voltage VEBO 5.0 Vdc Collector Current − Continuous IC 100

Contextual Info: MPS5179 Preferred Device High Frequency Transistor NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 12 Vdc Collector −Base Voltage VCBO 20

Contextual Info: MPS5137 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)30 I(C) Max. (A)800m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: MPS5127 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)12 V(BR)CBO (V)20 I(C) Max. (A)100m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.15 h(FE) Max. Current gain.

Contextual Info: MPS5179 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)12 V(BR)CBO (V)20 I(C) Max. (A)50m Absolute Max. Power Diss. (W)200m’ Minimum Operating Temp (øC)-55õ Maximum Operating Temp (øC)150õ I(CBO) Max. (A)20n @V(CBO) (V) (Test Condition)15

Contextual Info: MPS5134 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)10 V(BR)CBO (V)20 I(C) Max. (A)200m Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)400n @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.20 h(FE) Max. Current gain.

Contextual Info: MPS5131 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)20 I(C) Max. (A)200m Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: IS/ISO 9002 Lic# QSC/L-000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR AMPLIFIER TRANSISTOR MPS5172 TO-92 Plastic Package E BC ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise SYMBOL

TRANSISTOR C 3223

Abstract: TRANSISTOR C 1177 BT5179 NPN power transistor spice
Contextual Info: Sáfe:-O O W :Oí •v MPS5179 MMBT5179 NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 |uA to 30 m A range in common em itter or common base m ode of operation, and in low frequency drift, high ouput UHF oscillators. Sourced from Process 40.

Contextual Info: ON Semiconductort High Frequency Transistor MPS5179 NPN Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 12 Vdc Collector −Base Voltage VCBO 20 Vdc Emitter −Base Voltage VEBO 2.5 Vdc Collector Current — Continuous

MPS5172

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR AMPLIFIER TRANSISTOR MPS5172 TO-92 Plastic Package E BC ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise SYMBOL VALUE UNITS Collector Emitter Voltage

mps5172

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR AMPLIFIER TRANSISTOR MPS5172 TO-92 Plastic Package E BC ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise SYMBOL VALUE UNITS Collector Emitter Voltage

ic LM 356 equivalent

Contextual Info: SAMSUNG SEMICONDUCTOR INC MPS5172 IME D I 7^4142 0007321 0 I T ~ * J ~ 2 ,/ NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTÖR • Collector-Em itter Voltage: Veto =25V • C ollector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic

Contextual Info: ON Semiconductort High Frequency Transistor MPS5179 NPN Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 12 Vdc Collector–Base Voltage VCBO 20 Vdc Emitter–Base Voltage VEBO 2.5 Vdc Collector Current — Continuous

g300 rev 2.0

Abstract: SL 100 NPN Transistor PN5179 transistor rc4 MMBT5179 MPS5179 TRANSISTOR C 3223
Contextual Info: MICQNDUCTGR i MPS5179 PN5179 MMBT5179 NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 piA to 30 mA range in common em itter or comm on base mode of operation, and in low frequency drift, high ouput UHF oscillators. Sourced from Process 40.

Contextual Info: Small Signal RF/VHF/UHF Transistors Part No. Polarity VCEO V 2N5770 MPS5179 MPSH10 MPSH11 PN3563 PN918 NPN 15 12 25 25 15 15 fT Min. @ Max. (MHz) (MHz) 900 900 650 650 600 600 1800 2000 1500 1500 VCE & IC VCE IC Cob Max. (V) (mA) (pF) 6 10 10 10 - 8 5 4

BC237

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Frequency Transistor MPS5179 NPN Silicon Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 12 Vdc Collector – Base Voltage VCBO

common emitter amplifier

Abstract: MPS5179 LS012
Contextual Info: SAMSUNG SEMICONDUCTOR 146 O | 711,4145 0007325 5 | INC MPS5179 NPN EPITAXIAL SILICON TRANsSc t & R ^ HIGH FREQUENCY TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic Collector-Base Voltage CoHector-Emitter Voltage Emitter-Base Voltage Collector Current