KST10 Search Results

OF npn transitor

Abstract: kst10
Contextual Info: KST10/11 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSITOR TO-92 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Dissipation (TA=25°C) Derate above 25°C Collector Dissipation (TA=25°C)

Contextual Info: KST10 KST10 VHF/UHF Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector Base Voltage Parameter Value 30 Units V VCEO VEBO Collector-Emitter Voltage

Contextual Info: SAMSUNG ELECTRONICS INC bOE » • 7^4142 TRANSISTORS 0Q11524 *i27 « S r i G K FUNCTION GUIDE SOT-23 Type Transistors Continued Condition D evio and Polarity (Marking) NPN VcEO (V) PNP KST1009F2(F2) KST1009F3(F3) KST1009F4(F4) KST1009F5(F5) KST4124(ZC)

KSP10

Abstract: KST10
Contextual Info: KST10 KST10 VHF/UHF Transistor 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol Parameter Value Units VCBO Collector Base Voltage 30 V VCEO Collector-Emitter Voltage

KST10

Abstract: KSP10 MARKING 3E
Contextual Info: KST10 KST10 VHF/UHF Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector Base Voltage Parameter Value 30 Units V VCEO VEBO Collector-Emitter Voltage

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KST1009F1 /F2/F3/F4/F5 AM/FM RF AMPLIFIER TRANSISTOR ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-B ase Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollecto r C urrent C ollecto r D issipation

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KST1009F1/F2/F3/F4/F5 AM/FM RF AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Rating Unit 50 25 5 50 350 150 V V V mA mW °C VCBO VCEO VEBO IC PC T STG Collector-Base Voltage Collector-Emitter Voltage

F5 MARK

Abstract: marking f3 sot-23 KST1009F1 KST1009F2 KST1009F3 KST1009F4 KST1009F5 marking code F3
Contextual Info: KST1009F1/F2/F3/F4/F5 KST1009F1/F2/F3/F4/F5 AM/FM RF Amplifier Transistor 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol Parameter Value Units VCBO Collector-Base Voltage

transistor f1

Abstract: MARKING CODE f5 F5 marking code F5 MARK MARKING CODE CCB am fm rf amplifier marking CODE F2 f1 transistor mark KST1009F2 KST1009F3
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KST1009F1 /F2/F3/F4/F5 AM/FM RF AMPLIFIER TRANSISTOR SO T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-Base Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollector Current C ollector D issipation

Contextual Info: KST10 NPN EPITAXIAL SILICON TRANSISTOR VHF/UHF TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Rating Unit V CBO 30 25 3 350 150 357 V V V mW °C Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Dissipation

Irf640 irf9540

Abstract: IRFR220TF IRF510 mosfet irf640 451 MOSFET KSP44 IRFR9120-TF STR 456 2n3904 2n3906 KST2222ATF IRFR120TF
Contextual Info: PRODUCT INDEX ALPHA NUMERIC INDEX Power MOSFET S/STR Standard MOSFET PART NO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907A-TF KST3904-TF KST3906-TF

Diode GP 514

Abstract: pnp 500v KA9282B DARLINGTON 1A 60V npn to92 2N3904TA DARLINGTON 3A 100V npn to92 8A SOT23 SOT23 NPN KA9220B diode 60V 8A
Contextual Info: PRODUCT GUIDE PART NO. 2N3904TA/3904 2N3906/3906AT 2N4400/4401 2N4402/4403 2N6515 2N6517 2N652Q KSP05/06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP55 KSP92 KST06TF KST10TF KST14TF KST2222ATF KST2907ATF KST3904TF KST3906TF KST42TF KST4401TF KST4403TF

IRF9210

Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
Contextual Info: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF

KSP11

Abstract: KSP10 S parameters
Contextual Info: KST10/11 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSITOR T O -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol Col lector-Base Voltage C ollector-E m itter Voltage Em itter-Base Voltage C ollector D issipation (T a=25°C) Derate above 25°C

transistor polar

Abstract: KSP10 KSP11 kst10
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KST10/11 AMPLIFIER TRANSITOR T O -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-B ase Voltage C ollector-E m itter Voltage Em itter-Base Voltage C ollecto r D issipation (T a=25°C) Derate above 25°C

KSP10

Abstract: kst10 silicon KST10
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KST10 VHF/UHF TRANSISTOR ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector Base Voltage C ollector-E m itter Voltage Em itter-Base Voltage C ollector D issipation Storage Tem perature Therm al Resistance junction to A m bient

KSP10

Abstract: KST10
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KST10 VHF/UHF TRANSISTOR ABSOLUTE MAXIMUM RATINGS T,=25°C Characteristic Symbol Rating Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Dissipation Storage Temperature Thermal Resistance Junction to Ambient

KSC3488

Abstract: KSC853 KSA953 KSC815
Contextual Info: FUNCTION GUIDE TRANSISTORS SOT-23 Type Transistors Continued Condition Device and Polarity (Marking) NPN lc V ce lc (V) (A) (V) (mA) MIN MAX PNP KST1009F2(F2) KST1009F3(F3) KST1009F4(F4) KST1009F5(F5) KST4124(ZC) KST4126(C3) BCW29(C1) BCW31(D1) 1.1.2 V cE<*at), VBE tsatX V )

Contextual Info: KST10 NPN EPITAXIAL SILICON TRANSISTOR VHF/UHF TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25t; C h a ra cte ristic Collector Base Voltage Collector-Emitter Voltage Em itter-Base Voltage Collector Dissipation Storage Temperature Thermal R esistance junction to Ambient

ksp10

Abstract: KSP11 kst10 kst10 silicon
Contextual Info: KST10/11 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSITOR TO-92  ABSOLUTE MAXIMUM RATINGS TA=25 Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Dissipation (Ta=25 ) Derate above 25 Collector Dissipation (Ta=25 )

KSC815

Contextual Info: TRANSISTORS FUNCTION GUIDE SOT-23 Transistors Continued Device and Polarit(Marking) Condition NPN PNP KST1009F2(F2) KST1009F3(F3) KST1009F4(F4) KST1009F5(F5) KST4124(ZC) BCW 29(Ct) BCW31(D1) 1.1.2 (V) 25 25 25 25 25 20 20 V ce lc (A) (V) 3 3 3 3 1 (mA) MIN

KSP10

Abstract: kst10 silicon KST10
Contextual Info: KST10 KST10 VHF/UHF Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector Base Voltage Parameter Value 30 Units V VCEO VEBO Collector-Emitter Voltage

Contextual Info: NPN EPITAXIAL SILICO N TRANSISTOR KST1009F1/F2/F3/F4/F5 AM/FM RF AMPLIFIER TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic j | | | Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KST1009F1/F2/F3/F4/F5 AM/FM RF AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation