TO226AA Search Results

TO-220 transistor package

Abstract: transistor TO220 Thyristor to220 PDIP16 TO-220AB thyristor pins TO-226AC
Contextual Info: 1948-2012.qxp:QuarkCatalogTempNew 9/11/12 8:17 AM Page 1948 Packages Common Package Types DO-41 Plastic Axial Lead Button 3A SURMETIC TO-92 Two Lead TO226AC TOPCAN TO-92 TO226AA TO-126 TO-225AA TO-220 Two Lead TO-220 Three Lead TO-220 TO-220AB TO-220 Five Leads

TL431I

Abstract: TL431M TL431MFK TL431AC TL431C TL431CDR 30PPM TL431AI L431c tl4311
Contextual Info: TL431C, TL431AC, TL431I, TL431AI, TL431M, TL431Y ADJUSTABLE PRECISION SHUNT REGULATORS SLVS005I - JULY 1978 - REVISED AUGUST 1998 D PACKAGE TOP VIEW • Equivalent Full-Range Temperature Coefficient. . . 30 ppm/°C • 0.2-ii Typical Output Impedance •

TLC2425

Abstract: TLE24251
Contextual Info: TLE2425, TLE2425Y PRECISION VIRTUAL GROUNDS SLOSD65B - MARCH 1991 - REVISED AUGUST 1995 Excellent Regulation Characteristics - Output Regulation -4 5 nV Typ at l0 = 0 to -1 0 mA +15 nV Typ at Iq - 0 to +10 mA - Input Regulation = 1.5 ¿iV/V Typ Low-lmpedance Output. . . 0.007512 Tÿp

TL14310

Abstract: TL1431C SLVS062B
Contextual Info: TL1431C, TL1431Q, TL1431Y PRECISION PROGRAMMABLE REFERENCES SLVS062B - DECEMBER 1991 - REVISED AUGUST 199S D PACKAGE TOP VIEW 0.4% Initial Voltage Tolerance 0.1-Q Typical Output Impedance Fast Turn O n . . . 500 ns Sink Current Capability. . . 1 mA to 100 mA

Contextual Info: TISP4160LP, TISP4180LP SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS C o p y rig h t 1997, Power Innovations Limited, UK APRIL 1987 - REVISED SEPTEM BER 1997 TELECOMMUNICATION SYSTEM SECONDARY PROTECTION • Ion-Implanted Breakdown Region Precise and Stable Voltage

2N5064G

Abstract: 2n5060 SCR 2N5060 2N5060G SCR 2N5060 applications
Contextual Info: 2N5060 Series Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Annular PNPN devices designed for high volume consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits.

2N4856

Contextual Info: T em ic 2N4856 JAN/JANTX/JANTXV Series siliconix N-Channel JFETs 2N4856JAN 2N4857JAN 2N4858JAN 2N4859JAN 2N4860JAN 2N4861JAN 2N4856JANTX 2N4857JANTX 2N4858JANTX 2N4859JANTX 2N4860JANTX 2N4861JANTX 2N4856JANTXV 2N4857JANTXV 2N4858JANTXV 2N4859JANTXV 2N4860JANTXV

Contextual Info: TE LEDYNE COMPONENTS EäE a w b a e D o üü ía4 3 â m g T-31-25 SD2204 SEMICONDUCTOR P-CHANNEL ENHANCEMENT MODE D-MOS FET ORDERING INFORMATION Sorted Chips in Conductive Waffle Pack TO-220AA TO-92 Plastic Package Description SD2204CHP SD2204BD -400V, 7000

VN66AFD

Abstract: vn66a
Contextual Info: TN0601L, VN0606L, VN66AFD Vishay Siliconix N-Channel 60-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS<on) Max (&) VGS(th) (V) I d (A) 1.8 e v Gs = io v 0.5 to 2 0.47 0.8 to 2 0.33 0.8 to 2.5 1.46 TN0601L VN0606L 3e 60 VN66AFD v as = io v

S7 marking

Abstract: siliconix j175 SST174
Contextual Info: Tem ic J/SST174 Series S e m i c o n d u c t o r s P-Channel JFETs J174 J175 J176 J177 SST174 SST175 SST176 SST177 Product Summary P a rt N um ber V GS off (V) n>S(oD) M a x (Q ) Ipfoff) T y p (pA ) to N TVp (ns) J/SST174 5 to 10 85 -1 0 25 J/SST175 3 to 6

VND050

Abstract: vns0300
Contextual Info: li VND050 N-Channel Enhancement-Mode MOSFETs in c o rp o ra te d TYPE PACKAGE DEVICE Single TO-92 TO-226AA • VN50300L Single SOT-23 • VN50300T Single Chip • Available as VND01CHP TYPICAL CHARACTERISTICS Output Characteristics for Low Gate Drive 'd

P-Channel JFETs

Abstract: sst5460 SST5461
Contextual Info: 2N/SST5460 Series VISHAY T Vishay Sil icon ix P-Channel JFETs 2N5460 2N5461 2N5462 SST5460 SST5461 SST5462 PRODUCT SUMMARY Part Number V G S o ff ( V ) V (B R )G S S M i n ( V ) 2 N /S S T 5 4 6 0 0 .7 5 to 6 40 1 -1 2 N /S S T 5 4 6 1 1 to 7.5 40 1.5 -2

SST5484

Contextual Info: 2N/SST5484 Series Vishay Siliconix N-Channel JFETs 2N5484 SST5484 2N5485 SST5485 2N5486 SST5486 PRODUCT SUMMARY Part Number -0 .3 to - 3 -2 5 3 loss Min mA 1 2N/SST5485 -0 .5 to - 4 -2 5 3.5 4 2N/SST5486 -2 1 0 -6 -2 5 4 8 V G S (off) (V) V (B R )G S S Min (V)

741J

Contextual Info: Temic J/SST/U308 Series S e m i c o n d u c t o r s N-Channel JFETs J308 J309 J310 SST308 SST309 SST310 U309 U310 Product Summary Part Number V G S ioff V ) J3 0 8 - I t o - 6 .5 V (B R )G S S M in (V ) g ft Min (mS) -2 5 8 Id ss M in (m A ) 12 J309 —1 t o —4

VQ1006

Contextual Info: VN0808L/LS, VQ1006P Vishay Siliconix N-Channel 80- and 90-V D-S MOSFETs PRODUCT SUMMARY Part Number V (B R ) D S S M ¡ n ( V ) Id (A) r D S (o n ) M a x ( ß ) V G S (th )(V ) 4 @ V Gs = 10 V 0.8 to 2 0.3 4 @ V G S = 10 V 0.8 to 2 0.33 4 @ V q s - 10 V

Contextual Info: NPA N-Channel JFETs C X 'S ilico n ix in c o rp o r a te d TYPE PACKAGE Single TO-92 TO-226AA • J201, J202 Single SOT-23 • SST201, SST202 Single TO-18 • 2N4338, 2N4339, 2N4340, 2N4341, VCR4N Single Chip • Available as NPA1CHP, NPA2CHR NPA3CHP, NPA4CHP

Contextual Info: Tem ic VN3515L/VN4012L S e m i c o n d u c t o r s N-Channel Enhancement-Mode MOSFET Transistors Product Summary P art Number V BR DSS M in (V ) rosion) Max (Q) V c s u to iV ) I d (A ) V N 3515L 350 15 @ V G,s = 4.5 V 0.6 to 1.8 0.15 V N 40Î2L 400 12 @ V(3s = 4.5 V

VP0300M

Abstract: VP0300L VP0300B-2 VP0300B VP0300
Contextual Info: VP0300 SERIES P-Channel Enhancement-Mode MOS Transistors HHSüSSÜS PRODUCT SUMMARY PART NUMBER V BR DSS (V) VP0300B -3 0 VP0300L VP0300M BOTTOM VIEW TO-39 (TO-205AD) •d "W (A) PACKAGE 2.5 -1 .2 5 TO -39 -3 0 2.5 -0 .3 2 TO -92 -3 0 2.5 - 0 .5 TO -237 1 SOURCE

nd2410l

Contextual Info: ND2406L, ND2410L N-Channel Depletion-Mode MOS Transistors JBÜSKSS TO-92 TO-226AA PRODUCT SUMMARY T PART NUMBER V (BR)DSS ND2406L 240 6 0.23 ND2410L 240 10 0.18 BOTTOM VIEW >d (A) 1 SOURCE 2 GATE 3 DRAIN Performance Curves: VDDV24 ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)

2n4416

Abstract: Siliconix N-Channel JFETs marking code vishay SILICONIX to-72 2N4416 Siliconix SST4416
Contextual Info: 2N4416/2N4416A/SST4416 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number V G S o ff (V) V (B R )G S S Min (V) gfs Min (mS) loss (mA) -3 0 4.5 -2 .5 to - 6 -3 5 4.5 5 -< 6 -3 0 4.5 5 2N4416 -< 6 2N4416A SST4416 5 FEATURES BENEFITS APPLICATIONS

SFs SOT23

Contextual Info: 2 AE D • aTl?bUa QaQb4bM 1 H TELEDYNE CO M PO NENTS - T - 3 5 ~ - 2 S - TZ404 SEMICONDUCTOR _ N-CHANNEL ENHANCEMENT-MODE D-MOS FET ULTRA HIGH-SPEED LOW-COST SWITCH ORDERING INFORMATION TO-92 Pfaatic Package

p-channel mosfet bss92

Abstract: vishay siliconix code marking to-92 bss92 70210 VP2410
Contextual Info: VP2020L, BSS92 Vishay Siliconix P-Channel 200-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V ) rDS(on) Max ( Q ) VGS<th) (V ) I d (A) VP2020L -2 0 0 20 @ V q s = -4 .5 V -0 .8 to -2 .5 -0 .1 2 BSS92 -2 0 0 20 @ V qs = - 1 0 V -0 .8 t o -2 .8 -0 .1 5

Current Regulator Diodes

Abstract: NIP1CHP
Contextual Info: M ID fT-Siliconix J .Æ * * 1• in c o rp o ra te d N-Channel JFET Current Regulator Diodes_ TYPE PACKAGE DEVICE Single TO-92 TO-226AA • Single SOT-23 • SST108, SST109, SST110 Single TO-52 (TO-206AC) • 2N5432, 2N5433, 2N5434 Single Chip

digital controlled attenuator

Abstract: d82 sot-23 Teledyne Semiconductor CDG4460 DB3 5T
Contextual Info: 2flE » • awboa Doot-3is h m TELEDYNE COMPONENTS CDG4460 SEMICONDUCTOR 6-BIT VIDEO FREQUENCY DIGITAL CONTROLLED ATTENUATOR ORDERING INFORMATION 16-Pln Ceram ic Package | CPG4460J FEATURES APPLICATIONS ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Data Latch