VP0300 Search Results

VP0300M

Abstract: VP0300L VP0300B-2 VP0300B VP0300
Contextual Info: VP0300 SERIES P-Channel Enhancement-Mode MOS Transistors HHSüSSÜS PRODUCT SUMMARY PART NUMBER V BR DSS (V) VP0300B -3 0 VP0300L VP0300M BOTTOM VIEW TO-39 (TO-205AD) •d "W (A) PACKAGE 2.5 -1 .2 5 TO -39 -3 0 2.5 -0 .3 2 TO -92 -3 0 2.5 - 0 .5 TO -237 1 SOURCE

vp0300m

Abstract: VP0300B VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M VQ2001P VQ2004P
Contextual Info: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 -8 0 -3 0 5.0 5.0 2.5 -1 0 0 -8 0 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B VP0808B VP0300B

VP0300M

Abstract: VP0300M equivalent TA 7061 TO-205AD VP0300B VP0300L VQ2001J VQ2001P
Contextual Info: VP0300B/L/M, VQ2001J/P P-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0300B 2.5 @ VGS = –12 V –2 to –4.5 –1.25 VP0300L 2.5 @ VGS = –12 V –2 to –4.5 –0.32 VP0300M

VP0300M

Abstract: VGS-30V PCHANNEL ldr a 12v
Contextual Info: VP0300M 3 5 2 -^ 1 0 B Siliconix P-Channel Enhancement Mode Switch MOSPOWER PRODUCT SUMMARY APPLICATIONS • Switching Regulators ■ Converters ■ Motor Drivers Part Number b v dss Volts rDS 0IM (ohms) Package VP0300M -3 0 2.5 TO—237 PIN 1 — Source

VP0300

Abstract: VP0300L
Contextual Info: VP0300 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) -30V 2.5Ω -1.5A Order Number / Package TO-92 VP0300L Features Advanced DMOS Technology • Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a

Contextual Info: VP0300B/L/M, VQ2001J/P P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number rDS »n M a x (Q ) V GS(th) (V) I d (A) VP0300B 2.5 @ VGs = -1 2 V - 2 to -4.5 -1.25 VP0300L 2.5 @ VGs - - 1 2 V - 2 to -4.5 -0.32 2.5 @ VGs = -1 2 V -2 to -4.5

vp0300

Contextual Info: Super te x inc. VP0300 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ ^DS ON ' d (o n ) B V dgs (max) (min) TO-92 -30V 2 .5 a -1.5A VP0300L Features Advanced OMOS Technology ~'! Free from secondary breakdown

VP0808B

Abstract: VP0300B VP0300M VP0808L VP0808M VP1008B VP1008L VP1008M VQ2001P VQ2004P
Contextual Info: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 -8 0 -3 0 5.0 5.0 2.5 -1 0 0 -8 0 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B VP0808B VP0300B

VP100

Abstract: VP1001P VP0300B VP0300M VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M
Contextual Info: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 5.0 5.0 2.5 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B VP0808B VP0300B 0.37 0.37 0.48 1.0

VQ2001P

Contextual Info: VP0300L/LS, VQ2001J/P Vishay Siliconix P-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number rDS on Max (W) VGS(th) (V) ID (A) VP0300L V(BR)DSS Min (V) 2.5 @ VGS = –12 V –2 to –4.5 –0.32 VP0300LS 2.5 @ VGS = –12 V –2 to –4.5

1A60T

Abstract: p-channel DMOS VP0300 VP0300B VP0300L
Contextual Info: VP0300 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number / Package TO-39 TO-92 -30V 2.5Ω -1.5A VP0300B VP0300L Advanced DMOS Technology High Reliability Devices See pages 5-4 and 5-5 for MILITARY STANDARD Process

VP0300B

Abstract: VQ2001P VP0300L VP0300LS VQ2001J
Contextual Info: VP0300B/L/LS, VQ2001J/P Vishay Siliconix P-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0300B 2.5 @ VGS = –12 V –2 to –4.5 –1.25 VP0300L 2.5 @ VGS = –12 V –2 to –4.5

VP0300

Abstract: VP0300L
Contextual Info: – E T E L VP0300 – OBSO P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number / Package -30V 2.5Ω -1.5A VP0300L TO-92 7 Features Advanced DMOS Technology • Free from secondary breakdown

Contextual Info: Oi Supertex in V P 0300 c . P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices Order Number / Package b v dss/ ^DSfONI ' d ON b v dgs (max) (min) TO-39 TO-92 -30V 2.5Ì1 -1.5A VP0300B VP0300L Advanced DMOS Technology

Contextual Info: VP0300 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ Order Number / Package R d S ON I d (ON) BVdgs (max) (min) TO-39 TO-92 -30V 2.5Q -1.5A VP0300B VP0300L Advanced DMOS Technology High Reliability Devices See pages 5-4 and 5-5 for MILITARY STANDARD Process

VP0300M

Abstract: 150EC VP0300L
Contextual Info: T e m ic siiiconh_ VP0300B/L/M, VQ2001J/P P-Channel Enhancement-Mode MOS Transistors Product Summary Part Number • V br dss Min (V) ; ■ Id (A) r DS(on) Max (Q) VGS(th) (V) VP0300B 2.5@ V GS= -1 2 V - 2 to -4.5 -1.25 VP0300L 2.5 @ VGS = -1 2 V

VP0300M

Abstract: VP0300L
Contextual Info: VP0300B/L/M, VQ2001J/P P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0300B 2.5 @ VGS = –12 V –2 to –4.5 –1.25 VP0300L 2.5 @ VGS = –12 V –2 to –4.5 –0.32 VP0300M

s4 vishay

Abstract: AN804 VP0300L VP0300LS VQ2001J VQ2001P 0300L
Contextual Info: VP0300L/LS, VQ2001J/P Vishay Siliconix P-Channel 30-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0300L 2.5 @ VGS = –12 V –2 to –4.5 –0.32 VP0300LS 2.5 @ VGS = –12 V –2 to –4.5 –0.5 2 @ VGS = –12 V

Contextual Info: Supertex inc. VP0300 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dgs If b v d ss/ -30V 2.5ÌÌ O rder N um ber / Package I d ON (m in) TO-92 -1.5A VP0300L Features Advanced DMOS Technology □ Free from secondary breakdown □ Low power drive requirement

N-Channel JFET FETs

Abstract: T072
Contextual Info: T emic S e m i c o n d u c t o r s ^ S08 T052 T0220 T0237 T092 <2 lead T092 3 lead) DMOS FETs - Low-Power MOS P-Channel Enhancement-Mode (continued) Part N um ber | Vm ¿t- (••) II - «>-•-¿j Î ' ¿.A.: T0226AA (T092) VP0300L -3 0 2.5 -4.5 30 60

0300L

Abstract: 70217 marking code Sk transistors
Contextual Info: VP0300L/LS, VQ2001J/P Vishay Siliconix P-Channel 30-V D-S MOSFETs PRODUCT SUMMARY Part Number r DS(on) M a * (Î2) v GS(th) (V) Id (A) VP0300L 2.5 V q S = - 1 2 V - 2 to -4 .5 -0 .3 2 VP0300LS 2 .5 ® V a s = -1 2 V - 2 to -4 .5 -0 .5 2 @ V gs = - 1 2 V

VP0300M

Abstract: k 2541 30v IN400 VP0300B VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M
Contextual Info: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 -8 0 -3 0 5.0 5.0 2.5 -1 0 0 -8 0 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B VP0808B VP0300B

VP0300M

Abstract: VP0300L VQ2001J VQ2001P VQ3001J VQ3001P VQ7254J VQ7254P IN4080 VPMH03
Contextual Info: VPMH03 TYPICAL STATIC CHARACTERISTICS Pulse width 80ns— 30(Vs, Duty cycle 1%, Tc=25°C Part Numbers: VP0300M, VP0300L, VQ2001P, VQ2001J Segments 2 and 4: VQ3001P, VQ3001J, VQ7254P, VQ7254J Ohmic Region 1102 3 O : и. VDS = Ü. 0H 110 3 O z 10V VGS = iïTTTT

VP0300B

Abstract: vishay LT VP0300L VP0300LS VQ2001J VQ2001P 70217
Contextual Info: VP0300B/L/LS, VQ2001J/P Vishay Siliconix P-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number V BR DSS M in (V ) rDS(on) Max (Q ) Id (A) V GS(th) (V ) VP0300B 2.5 @ VGS = —12 V - 2 to —4.5 -1.25 VP0300L