VQ2001J Search Results

VP0300M

Abstract: VP0300M equivalent TA 7061 TO-205AD VP0300B VP0300L VQ2001J VQ2001P
Contextual Info: VP0300B/L/M, VQ2001J/P P-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0300B 2.5 @ VGS = –12 V –2 to –4.5 –1.25 VP0300L 2.5 @ VGS = –12 V –2 to –4.5 –0.32 VP0300M

Contextual Info: VP0300B/L/M, VQ2001J/P P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number rDS »n M a x (Q ) V GS(th) (V) I d (A) VP0300B 2.5 @ VGs = -1 2 V - 2 to -4.5 -1.25 VP0300L 2.5 @ VGs - - 1 2 V - 2 to -4.5 -0.32 2.5 @ VGs = -1 2 V -2 to -4.5

VQ2001P

Contextual Info: VP0300L/LS, VQ2001J/P Vishay Siliconix P-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number rDS on Max (W) VGS(th) (V) ID (A) VP0300L V(BR)DSS Min (V) 2.5 @ VGS = –12 V –2 to –4.5 –0.32 VP0300LS 2.5 @ VGS = –12 V –2 to –4.5

VP0300B

Abstract: VQ2001P VP0300L VP0300LS VQ2001J
Contextual Info: VP0300B/L/LS, VQ2001J/P Vishay Siliconix P-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0300B 2.5 @ VGS = –12 V –2 to –4.5 –1.25 VP0300L 2.5 @ VGS = –12 V –2 to –4.5

VP0300M

Abstract: VP0300B
Contextual Info: Tem ic VP0300B/L/M, VQ2001J/P Siliconix P-Channel Enhancement-Mode MOS Transistors Product Summary Part N um ber «•DS on M ax (Q ) VoSith) (V) I d (A) VP0300B 2 .5 @ V gs = - 1 2 V - 2 to -4 .5 -1 .2 5 VP0300L 2 .5 @ V GS = - 1 2 V - 2 to -4 .5 -0 .3 2

VP0300M

Abstract: 150EC VP0300L
Contextual Info: T e m ic siiiconh_ VP0300B/L/M, VQ2001J/P P-Channel Enhancement-Mode MOS Transistors Product Summary Part Number • V br dss Min (V) ; ■ Id (A) r DS(on) Max (Q) VGS(th) (V) VP0300B 2.5@ V GS= -1 2 V - 2 to -4.5 -1.25 VP0300L 2.5 @ VGS = -1 2 V

VP0300M

Abstract: VP0300L
Contextual Info: VP0300B/L/M, VQ2001J/P P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0300B 2.5 @ VGS = –12 V –2 to –4.5 –1.25 VP0300L 2.5 @ VGS = –12 V –2 to –4.5 –0.32 VP0300M

s4 vishay

Abstract: AN804 VP0300L VP0300LS VQ2001J VQ2001P 0300L
Contextual Info: VP0300L/LS, VQ2001J/P Vishay Siliconix P-Channel 30-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0300L 2.5 @ VGS = –12 V –2 to –4.5 –0.32 VP0300LS 2.5 @ VGS = –12 V –2 to –4.5 –0.5 2 @ VGS = –12 V

0300L

Abstract: 70217 marking code Sk transistors
Contextual Info: VP0300L/LS, VQ2001J/P Vishay Siliconix P-Channel 30-V D-S MOSFETs PRODUCT SUMMARY Part Number r DS(on) M a * (Î2) v GS(th) (V) Id (A) VP0300L 2.5 V q S = - 1 2 V - 2 to -4 .5 -0 .3 2 VP0300LS 2 .5 ® V a s = -1 2 V - 2 to -4 .5 -0 .5 2 @ V gs = - 1 2 V

VP0300M

Abstract: VP0300L VQ2001J VQ2001P VQ3001J VQ3001P VQ7254J VQ7254P IN4080 VPMH03
Contextual Info: VPMH03 TYPICAL STATIC CHARACTERISTICS Pulse width 80ns— 30(Vs, Duty cycle 1%, Tc=25°C Part Numbers: VP0300M, VP0300L, VQ2001P, VQ2001J Segments 2 and 4: VQ3001P, VQ3001J, VQ7254P, VQ7254J Ohmic Region 1102 3 O : и. VDS = Ü. 0H 110 3 O z 10V VGS = iïTTTT

VP0300B

Abstract: vishay LT VP0300L VP0300LS VQ2001J VQ2001P 70217
Contextual Info: _VP0300B/L/LS, VQ2001J/P Vishay Siliconix P-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number V BR DSS M in (V ) rDS(on) Max (Q ) Id (A) V GS(th) (V ) VP0300B 2.5 @ VGS = —12 V - 2 to —4.5 -1.25 VP0300L

75576

Abstract: AN804 VP0300B VP0300L VP0300M VQ2001J VQ2001P
Contextual Info: VP0300B/L/M, VQ2001J/P Siliconix PĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0300B 2.5 @ VGS = -12 V -2 to -4.5 -1.25 VP0300L 2.5 @ VGS = -12 V -2 to -4.5 -0.32 2.5 @ VGS = -12 V

VP0300L

Abstract: VP0300LS AN804 VQ2001J VQ2001P 0300l
Contextual Info: VP0300L/LS, VQ2001J/P Vishay Siliconix P-Channel 30-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0300L 2.5 @ VGS = –12 V –2 to –4.5 –0.32 VP0300LS 2.5 @ VGS = –12 V –2 to –4.5 –0.5 2 @ VGS = –12 V

AN804

Abstract: VP0300L VP0300LS VQ2001J VQ2001P 1g1s
Contextual Info: VP0300L/LS, VQ2001J/P Vishay Siliconix P-Channel 30-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0300L 2.5 @ VGS = –12 V –2 to –4.5 –0.32 VP0300LS 2.5 @ VGS = –12 V –2 to –4.5 –0.5 2 @ VGS = –12 V

Contextual Info: T em ic Semiconductors S08 DMOS FETs T0220 T052 TO237 T092 2 lead T092 (3 lead) Low-Power MOS N-Channel Enhancement-Mode (continued) DMOS FETs - Low-Power MOS P-Channel Enhancement-Mode j mm>xm Ì Q K ? Ì |g ir ( M ) 14-Pin Sidebraze (P) and Plastic (J)

vp0300m

Abstract: VP0300B VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M VQ2001P VQ2004P
Contextual Info: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 -8 0 -3 0 5.0 5.0 2.5 -1 0 0 -8 0 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B VP0808B VP0300B

VP0808B

Abstract: VP0300B VP0300M VP0808L VP0808M VP1008B VP1008L VP1008M VQ2001P VQ2004P
Contextual Info: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 -8 0 -3 0 5.0 5.0 2.5 0.37 0.37 0.48 -1 0 0 -8 0 5.0 5.0 -9 0 -6 0 -3 0 5.0 5.0 -90 -60 -30 5.0 5.0 2.0 -8 0

BSR78

Abstract: VP0300M VP0808L 041 itt diode VP0300B VP0808B VP0808M VP1008B VP1008L VP1008M
Contextual Info: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) rDS(on) (Ohms) >D Continuous (Amps) •100 -8 0 -3 0 5.0 5.0 2.5 0.9 0.9 100 -8 0 -3 0 5.0 5.0 2.5 -1 0 0 -8 0 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B

VP0808M

Abstract: VQ2006P VP0300B VP0300M VP0808B VP0808L VP1008B VP1008L VP1008M VQ2001P
Contextual Info: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 -8 0 -3 0 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 -8 0 -3 0 5.0 5.0 2.5 0.37 0.37 0.48 -1 0 0 -8 0 5.0 5.0 -9 0 -6 0 -3 0 -90 -60 -30 1.3 Powor Dissipation

VP0808B

Abstract: VP0300B VP0300M VP0808L VP0808M VP1008B VP1008L VP1008M VQ2001P VQ2004P
Contextual Info: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 -8 0 -3 0 5.0 5.0 2.5 -1 0 0 -8 0 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B VP0808B VP0300B

VP100

Abstract: VP1001P VP0300B VP0300M VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M
Contextual Info: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 5.0 5.0 2.5 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B VP0808B VP0300B 0.37 0.37 0.48 1.0

S4 12

Contextual Info: VQ2001 SERIES P-Channel Enhancement-Mode _ MOS Transistor Arrays 14-PIN DIP SIDEBRAZE PRODUCT SUMMARY PART NUMBER V BR|DSS V Q 2001J -3 0 VQ 2001P 2 -3 0 2 TOP VIEW Dual-ln-Line Package Id (A PACKAGE - 0 .6 Plastic - 0 .6 S idebraze Ï7] D4

VP0808M

Abstract: IN400 VP0300B VP0300M VP0808B VP0808L VP1008B VP1008L VP1008M VQ2001P
Contextual Info: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) rDS(on) (Ohms) >D Continuous (Amps) •100 -8 0 -3 0 5.0 5.0 2.5 0.9 0.9 100 -8 0 -3 0 5.0 5.0 2.5 -1 0 0 -8 0 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B

VP0300M

Abstract: k 2541 30v IN400 VP0300B VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M
Contextual Info: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 -8 0 -3 0 5.0 5.0 2.5 -1 0 0 -8 0 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B VP0808B VP0300B