TP0202T Search Results

AN804

Abstract: TP0202T
Contextual Info: TP0202T Siliconix PĆChannel EnhancementĆMode MOS Transistor Product Summary V BR DSS Min (V) -20 rDS(on) Max (W) VGS(th) (V) ID (A) 1.4 @ VGS = -10 V -1.3 to - 3 V -0.31 3.5 @ VGS = -4.5 V -1.3 to - 3 V -0.16 For applications information see AN804. Features

AN804

Abstract: TP0202T
Contextual Info: TP0202T Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) –20 rDS(on) Max (W) VGS(th) (V) ID (A) 1.4 @ VGS = –10 V –1.3 to – 3 V –0.41 3.5 @ VGS = –4.5 V –1.3 to – 3 V –0.27 FEATURES BENEFITS APPLICATIONS D D D

TP0202T

Abstract: Oj26
Contextual Info: TP0202T T e MIC Se mi c o n d u c t o r s P-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) Max ( Q ) V GS U h )(V ) I d (A) 1 .4 @ V g s = - 1 0 V -1 .3 to - 3 V -0.41 3.5 @ V Gs = ”4-5 V - 1 .3 1 0 - 3 V -0 .2 7 ro s(o n ) -2 0

TP0202T

Contextual Info: TP0202T P-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) –20 20 rDS(on) Max (W) VGS(th) (V) ID (A) 1.4 @ VGS = –10 V –1.3 to – 3 V –0.41 3.5 @ VGS = –4.5 V –1.3 to – 3 V –0.27 Features Benefits Applications D

TP0202

Contextual Info: TP0202T Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS M în (V) V G S 0 h )(V ) b (A) V -1 .3 t o - 3 V -0.41 3.5 @ V g s = - 4-5 V -1 .3 to - 3 V -0 .2 7 r D S (o n ) 1.4 -2 0 Max (Q) @ Vq s =-1 0 FEATURES BENEFITS APPLICATIONS •

Contextual Info: Tem ic TP0202T Siliconix P-Channel Enhancement-Mode MOS Transistor Product Summary V br dss M in (V) fD S(on) -2 0 M ax (Q) V GS(lh) In (A) (V) 1.4 @ VGS = -1 0 V -1 .3 to - 3 V -0.31 3.5 @ VGS = -4 .5 V -1 .3 to - 3 V -0.16 For applications information see AN804, page 12-43.

Contextual Info: T em ic Semiconductors S08 DMOS FETs T0220 T052 TO237 T092 2 lead T092 (3 lead) Low-Power MOS N-Channel Enhancement-Mode (continued) DMOS FETs - Low-Power MOS P-Channel Enhancement-Mode j mm>xm Ì Q K ? Ì |g ir ( M ) 14-Pin Sidebraze (P) and Plastic (J)

2n7000 complement

Abstract: VP0300L mosfet discrete totem pole drive CIRCUIT 2n7000+complement 2n7000 equivalent AN804 Si9939DY Si9942DY Si9958DY TP0610
Contextual Info: AN804 Siliconix PĆChannel MOSFETs, the Best Choice for HighĆSide Switching Ed Oxner Circuit Applications Historically, pĆchannel FETs were not considered as useful as their nĆchannel counterparts. The higher resistivity of pĆtype silicon, resulting from its lower carrier mobility, put

MMBD2104

Abstract: Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932
Contextual Info: The Surface Mount Device Code Book R P Blackwell G4PMK A marsport publication! Introduction SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a

MMBD2103

Abstract: ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N
Contextual Info: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.

SMD Codes

Abstract: TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101
Contextual Info: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.

VN10KLS

Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
Contextual Info: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated

FET pair n-channel p-channel

Abstract: FET P-Channel Switch logic level complementary MOSFET switch 2n7000 complement logic level complementary MOSFET mosfet discrete totem pole drive CIRCUIT Power MOSFET p-Channel n-channel dual mosfet power P-Channel N-Channel CIRCUIT TP0610 series VN0300L equivalent
Contextual Info: AN804 P-Channel MOSFETs, the Best Choice for High-Side Switching Ed Oxner Historically, p-channel FETs were not considered as useful as their n-channel counterparts. The higher resistivity of p-type silicon, resulting from its lower carrier mobility, put it at a disadvantage compared to

JFET TRANSISTOR REPLACEMENT GUIDE j201

Abstract: UA6538 DC motor speed control using 555 and ir sensor U2740B-FP UAA145 CQY80 U2840B tcrt9050 TCDF1910 sod80 smd zener diode color band
Contextual Info: Semiconductors Technical Library March 1996 Back Products Overview Communications Automotive Computer Industrial Broadcast Media Aerospace & Defense Communications Applications Telephone ICs Type U3750BM–CP Package 44–pin PLCC Function One chip telephone