TP0202 Search Results

TP0202K

Abstract: TP0202K-T1-E3 marking code vishay SILICONIX sot-23
Contextual Info: TP0202K Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) VGS(th) (V) ID (mA) Qg (Typ.) 1.4 at VGS = - 10 V - 1.3 to - 3.0 - 385 3.5 at VGS = - 4.5 V - 1.3 to - 3.0 - 240 - 30 1000 TO-236 (SOT-23) G APPLICATIONS 1 3

AN804

Abstract: TP0202T marking code vishay SILICONIX vishay siliconix code marking
Contextual Info: TP0202T Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) –20 rDS(on) Max (W) VGS(th) (V) ID (A) 1.4 @ VGS = –10 V –1.3 to – 3 V –0.41 3.5 @ VGS = –4.5 V –1.3 to – 3 V –0.27 FEATURES BENEFITS APPLICATIONS D D D

TP0202T

Abstract: AN804
Contextual Info: TP0202T Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) –20 rDS(on) Max (W) VGS(th) (V) ID (A) 1.4 @ VGS = –10 V –1.3 to – 3 V –0.41 3.5 @ VGS = –4.5 V –1.3 to – 3 V –0.27 FEATURES BENEFITS APPLICATIONS D D D

Contextual Info: TP0202K New Product Vishay Siliconix P-Channel 30-V D-S MOSFET -3 0 * iK > ’ PRODUCT SUMMARY V (B R )D S S ( m ln ) (V ) < r D S (o n ) (f ì ) VGS(th)(V) lD (mA) 1.4 @ V q s = - 1 0 V -1 .3 t o -3 .0 -3 8 5 3.5 @ V G s = - 4 - 5 V -1 .3 t o -3 .0 -2 4 0

AN804

Abstract: TP0202T
Contextual Info: TP0202T Siliconix PĆChannel EnhancementĆMode MOS Transistor Product Summary V BR DSS Min (V) -20 rDS(on) Max (W) VGS(th) (V) ID (A) 1.4 @ VGS = -10 V -1.3 to - 3 V -0.31 3.5 @ VGS = -4.5 V -1.3 to - 3 V -0.16 For applications information see AN804. Features

AN804

Abstract: TP0202T
Contextual Info: TP0202T Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) –20 rDS(on) Max (W) VGS(th) (V) ID (A) 1.4 @ VGS = –10 V –1.3 to – 3 V –0.41 3.5 @ VGS = –4.5 V –1.3 to – 3 V –0.27 FEATURES BENEFITS APPLICATIONS D D D

Contextual Info: TP0202K Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) VGS(th) (V) ID (mA) Qg (Typ.) 1.4 at VGS = - 10 V - 1.3 to - 3.0 - 385 3.5 at VGS = - 4.5 V - 1.3 to - 3.0 - 240 - 30 1000 TO-236 (SOT-23) G APPLICATIONS 1 3

marking code vishay SILICONIX

Contextual Info: TP0202K Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) VGS(th) (V) ID (mA) Qg (Typ.) 1.4 at VGS = - 10 V - 1.3 to - 3.0 - 385 3.5 at VGS = - 4.5 V - 1.3 to - 3.0 - 240 - 30 1000 TO-236 (SOT-23) G APPLICATIONS 1 3

TP0204

Abstract: TP0204N2 TP0204N3
Contextual Info: 01 SUPERTEX INC DE | ô 7 7 3 E T S ODOlSSb T | ~ P-Channel Enhancement-Mode Vertical D M O S Power FETs Ordering Information Order Number / Package TO-39 TO-92 BVdss I ^DS ON b v dos (max) (min) -20 V 2.0Q -2.0A TP0202N2 TP0202N3 -40V 2 .on -2.0A TP0204N2

TP0202T

Abstract: Oj26
Contextual Info: TP0202T T e MIC Se mi c o n d u c t o r s P-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) Max ( Q ) V GS U h )(V ) I d (A) 1 .4 @ V g s = - 1 0 V -1 .3 to - 3 V -0.41 3.5 @ V Gs = ”4-5 V - 1 .3 1 0 - 3 V -0 .2 7 ro s(o n ) -2 0

TP0202T

Contextual Info: TP0202T P-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) –20 20 rDS(on) Max (W) VGS(th) (V) ID (A) 1.4 @ VGS = –10 V –1.3 to – 3 V –0.41 3.5 @ VGS = –4.5 V –1.3 to – 3 V –0.27 Features Benefits Applications D

TP0202T

Contextual Info: TP0202T P-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) –20 rDS(on) Max (W) VGS(th) (V) ID (A) 1.4 @ VGS = –10 V –1.3 to – 3 V –0.41 3.5 @ VGS = –4.5 V –1.3 to – 3 V –0.27 Features Benefits Applications D D D

TA 7061

Abstract: TP0202T S4450
Contextual Info: TP0202T P-Channel Enhancement-Mode MOS Transistor Product Summary V BR DSS Min (V) –20 rDS(on) Max (W) VGS(th) (V) ID (A) 1.4 @ VGS = –10 V –1.3 to – 3 V –0.31 3.5 @ VGS = –4.5 V –1.3 to – 3 V –0.16 Features Benefits Applications D D D D

Contextual Info: TP0202K Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) VGS(th) (V) ID (mA) Qg (Typ.) 1.4 at VGS = - 10 V - 1.3 to - 3.0 - 385 3.5 at VGS = - 4.5 V - 1.3 to - 3.0 - 240 - 30 1000 TO-236 (SOT-23) G APPLICATIONS 1 3

TP0202K

Abstract: TP0202K-T1
Contextual Info: TP0202K Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS(min) (V) −30 30 rDS(on) (W) VGS(th) (V) ID (mA) 1.4 @ VGS = −10 V −1.3 to −3.0 −385 3.5 @ VGS = −4.5 V −1.3 to −3.0 −240 FEATURES D D D D D D Qg (Typ) 1000 BENEFITS

TN0624N2

Abstract: TN0620ND TN0624N3 TN0624N5 TN0624ND TP0102N2 TP0102N3 TP0102ND TP0104N2 TP0204N3
Contextual Info: - f JR * £ ÍS Ta=25°C t Vd s Vgs s « tt « i Vd g * (V) SUPERTEX SUPERTEX N TN0624N3 TN0624N5 TN0624ND SUPERTEX SUPERTEX SUPERTEX N TN1110ND TP0102N2 TP0102N3 SUPERTEX SUPERTEX SUPERTEX N TP01D2ND TP0104N2 TPÛ104N3 TP0104ND TPÛ202N2 TP0202N3 TP02Ü2ND

marking code vishay SILICONIX sot-23

Abstract: TP0202K
Contextual Info: TP0202K New Product Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS(min) (V) –30 rDS(on) (W) VGS(th) (V) ID (mA) 1.4 @ VGS = –10 V –1.3 to –3.0 –385 3.5 @ VGS = –4.5 V –1.3 to –3.0 –240 FEATURES BENEFITS APPLICATIONS

TP0202

Contextual Info: TP0202T Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS M în (V) V G S 0 h )(V ) b (A) V -1 .3 t o - 3 V -0.41 3.5 @ V g s = - 4-5 V -1 .3 to - 3 V -0 .2 7 r D S (o n ) 1.4 -2 0 Max (Q) @ Vq s =-1 0 FEATURES BENEFITS APPLICATIONS •

Contextual Info: TP0202K Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS(min) (V) −30 30 rDS(on) (W) VGS(th) (V) ID (mA) 1.4 @ VGS = −10 V −1.3 to −3.0 −385 3.5 @ VGS = −4.5 V −1.3 to −3.0 −240 FEATURES D D D D D D Qg (Typ) 1000 BENEFITS

TP0202K

Abstract: TP0202K-T1 marking code vishay SILICONIX
Contextual Info: TP0202K Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS(min) (V) −30 30 rDS(on) (W) VGS(th) (V) ID (mA) 1.4 @ VGS = −10 V −1.3 to −3.0 −385 3.5 @ VGS = −4.5 V −1.3 to −3.0 −240 FEATURES D D D D D D Qg (Typ) 1000 BENEFITS

TP0202K

Abstract: TP0202K-T1-E3
Contextual Info: TP0202K Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) VGS(th) (V) ID (mA) Qg (Typ.) 1.4 at VGS = - 10 V - 1.3 to - 3.0 - 385 3.5 at VGS = - 4.5 V - 1.3 to - 3.0 - 240 - 30 1000 TO-236 (SOT-23) G APPLICATIONS 1 3

TP0202K

Contextual Info: SPICE Device Model TP0202K Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

AN609

Abstract: TP0202K
Contextual Info: TP0202K_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

marking code K2

Contextual Info: TP0202K New Product Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS(min) (V) –30 rDS(on) (W) VGS(th) (V) ID (mA) 1.4 @ VGS = –10 V –1.3 to –3.0 –385 3.5 @ VGS = –4.5 V –1.3 to –3.0 –240 FEATURES BENEFITS APPLICATIONS