1G1S Search Results

Marking G1s

Contextual Info: I bbS3131 [][]P3bP3 bat. • APX BF992R N AUER PHILIPS/DISCRETE L7E D yv SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143R microminiature envelope w ith source and substrate interconnected. This MOS-FET tetrode is intended fo r use in VHF applications, such as VHF

diode SY 192

Abstract: KP902A Datenblattsammlung Halbleiterbauelemente DDR VEB mikroelektronik transistor kp mikroelektronik datenblattsammlung "halbleiterwerk frankfurt" KP306a mikroelektronik DDR
Contextual Info: . • M ' - l ä r o u jk 1 U ’i m - í!Í'.>. "lA T T S A M M . 'Q elektronische Bauelemente IWT iO 1/87 I# %# S Die vorliegenden Datenblätter dienen nur zur Information« Sie beinhalten Informationen über Halbleiterbauelemente des in den Listen elektronischer Bauelemente eingestuften Sortiments«

3N201

Abstract: MPF201 3n203 3N201+equivalent 3N202
Contextual Info: MOTOROLA 6367254 SC -CXSTRS/R M OT O RO L A F> SC Tb CXSTRS/R D F | b 3 t, 7 2 5 4 96D F 82608 OOflSbOfl D _ z 2 . 5 ^ h 3N201 3N202 3N203 M A X IM U M R A T IN G S Ra tin g Sym bol V alu e U n it V DS 25 Vdc vdgi

W1P 59 transistor

Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
Contextual Info: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors

Contextual Info: t>LS3T31 0024737 T4T « A P X N AMER PHILIPS/DISCRETE BF990AR L7E T> J V. SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic S O T 1 4 3 R microminiature envelope with source and substrate interconnected, intended for U H F applications, such as U H F television tuners and

3363A

Abstract: Q06-5 ULN3330T ULN3360T 994c uln3330 ULN3363T ULN-3360 ULN-3330T GQ-05
Contextual Info: - i A L L E G R O M I C R O S Y S T E M S INC «.♦* 33E ]> 3 3 3 0 \ w fcS ISSU 0SD433Ô GOOSMS1 Q • A L Û R , 3 3 6 0 , OPTOELECTRONIC SWITCHES The ULN3330T/TA, ULN3360T, and ULN3363T optoelectronic switches provide light detection and low-level signal processing in

L1037

Abstract: L-1037
Contextual Info: MITSUBISHI Neh POWER MOSFET FK14UM-9 HIGH-SPEED SWITCHING USE FK14UM-9 OUTLINE DRAWING Dimensions in mm 10.5MAX. , 4.5 % . 3.6 0.8 2.54 2.54 0.5 I . 2.6 -r X _ —I \ • V dss . 450V • rDS ON (MAX)

BGY41

Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.

TRIAC RCA ca3058

Abstract: rca ca3240E CA311G CA101AT CA124G sn76013 CA1310 CA555CG Fuji Electric tv schematic diagram 40468A
Contextual Info: RCA Linear Integrated Circuits This DATABOOK contains complete technical information on the full line of RCA standard commercial linear in­ tegrated circuits and MOS field-effect transistors for both industrial and con­ sumer applications. An Index to Devices provides a complete listing of