0SD433Ô Search Results

2N5832

Abstract: 2n6008
Contextual Info: ALLEGRO MICROSYSTEMS 8514019 INC SPRA G U E. =13 » • 0SD433Ô G 0 G 3 S Ô C1 Ô ■ S E M IC O N D S / I C S 93D 03589 ALGR D T 'ü - 1 - PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘2N’ and ‘TP’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C

diode LR 105

Abstract: 1N914
Contextual Info: L ALLEGRO MICROSYSTEMS ^3 INC D • 0SD433Ô □ □ □ 3 7 CI D 1 ■ ALGR T-91-01 PROCESS TSB Process TSB High-Speed Switching Diode This gold-doped silicon epitaxial diode, designed to meet 1N914 specifications, has a typical reverse recovery time of 3.2 ns and a typical junction capaci­

Contextual Info: am Data Sheet 26300.5 8958 VOICE CO IL M O TO R D RIVER A8958CEA ! i l I i£ I Providing control and drive of the voice coil motor used for head positioning in disk drive applications, the A 8958- is a full-bridge driver which can be configured so that its output current is a direct function

3363A

Abstract: Q06-5 ULN3330T ULN3360T 994c uln3330 ULN3363T ULN-3360 ULN-3330T GQ-05
Contextual Info: - i A L L E G R O M I C R O S Y S T E M S INC «.♦* 33E ]> 3 3 3 0 \ w fcS ISSU 0SD433Ô GOOSMS1 Q • A L Û R , 3 3 6 0 , OPTOELECTRONIC SWITCHES The ULN3330T/TA, ULN3360T, and ULN3363T optoelectronic switches provide light detection and low-level signal processing in

THC5128

Abstract: THC4945 THC4946 THC4951 THC4952 THC4953 THC4954 THC4966 THC4967 THC4968
Contextual Info: AL L E GRO MI C ROS Y S T E MS 8 5 1 4 0 1 9 SP RA GU E. I NC T3 D • 0SD433Ô 0003Sb5 T «ALGR 9 3 D 0 3 5 6 2 iD S E M I C O N D S / ICS BIPOLAR TRANSISTOR CHIPS NPN Transistors ‘TH’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain

Contextual Info: PRO TEC TED , HIGH-TEMPERATZJKE, OPEN-CO LLECTO R HALL-EFFECT LATC H These open-collector Hall-effect latches are capable of sensing magnetic fields while using an unprotected power supply. The A3197can provide position and speed information by providing a digital output

Contextual Info: DUAL PERIPHERAL/POWER DRIVER —ENHANCED OUTPUT CAPABILITY The UDN5725M power driver combines NAND and NOR logic gates in a configuration particularly useful with small brushless dc motor drivers. The integrated circuit includes high-current saturated output transistors and transient-suppression diodes. It can be used in

zener

Contextual Info: AL LE GR O MICROSYSTEMS INC T3 » 0SD433Ô 00D3ÔÜ0 □ • AL GR T -9 1 -0 1 ZENER DIODES Process ZC, ZE and ZK Zener Diodes >Silicon Epitaxial Layer Construction for Low Series Resistance ■Buried Zener Junction for High Reliability ■Silicon Nitride Passivation

Contextual Info: ADVANCE INFORMATION subject to change without notice Juäy 7, 1998 The A3280—and A3281—Hall-effect latches are extremely temperature-stable and stress-resistant sensors especially suited for operation over extended temperature ranges to +150°C. Superior high-temperature