0300L Search Results

2410m

Abstract: 0300L 2222LM 0808M 2406M 0201T 0300M 12l 7002
Contextual Info: Tem ic S e m i c o n d u c t o r s ^ S08 < > ^ T052 T0220 ^ TO237 T092 2 lead T092 (3 lead) Low-Power Discretes I I % DMOS FETs - Low-Power MOS N-Channel Enhancement-Mode I , Pm Number 14-Pin Sidebraze (P) and Plastic (J) i- V Q 1001J 30 V Q 1001P • ■

VN50300L

Abstract: VN50300T
Contextual Info: 0300L/VN50300T Vishay Siliconix N-Channel 500-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) 0300L 500 VN50300T rDS(on) Max (W) VGS(th) (V) ID (A) 300 @ VGS = 10 V 1 to 4.5 0.033 300 @ VGS = 10 V 1 to 4.5 0.022 FEATURES BENEFITS APPLICATIONS

k 3561 MOSFET

Abstract: TP5N05 BUZ80a equivalent p20n50 P12N08 nx 9120 TP3N40 FD1Z0 IRFZ22 mosfet th15n20
Contextual Info: 1 Selection by Package The product listed in Tables 1 through 22 have been com­ piled on an IBM or compatible personal computer disk for quick selection of product. This versatile disk may be obtained by contacting a Motorola sale office in your area or by con­

IRFD1Z3 equivalent

Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
Contextual Info: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not

VNDO50

Abstract: 0300L VN50300L VN50300T vishay siliconix code marking week code vishay SILICONIX
Contextual Info: 0300L/VN50300T Vishay Siliconix N-Channel 500-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) 0300L 500 VN50300T rDS(on) Max (W) VGS(th) (V) ID (A) 300 @ VGS = 10 V 1 to 4.5 0.033 300 @ VGS = 10 V 1 to 4.5 0.022 FEATURES BENEFITS APPLICATIONS

0401L

Abstract: TN0201L TN0401L VN0300L VN0300LS tn0201l siliconix
Contextual Info: TN0201L/0401L, 0300L/LS Vishay Siliconix N-Channel 20-, 30-, 40-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TN0201L 20 1.2 @ VGS = 10 V 0.5 to 2 0.64 TN0401L 40 1.2 @ VGS = 10 V 0.5 to 2 0.64 0300L 30

0300L

Abstract: VN50300T VN50300L
Contextual Info: 0300L/VN50300T Vishay Siliconix N-Channel 500-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) 0300L 500 VN50300T rDS(on) Max (W) VGS(th) (V) ID (A) 300 @ VGS = 10 V 1 to 4.5 0.033 300 @ VGS = 10 V 1 to 4.5 0.022 FEATURES BENEFITS APPLICATIONS

SIVN0300L

Abstract: 0300l VN0300 0300L to92
Contextual Info: VN0300 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination

s4 vishay

Abstract: AN804 VP0300L VP0300LS VQ2001J VQ2001P 0300L
Contextual Info: 0300L/LS, VQ2001J/P Vishay Siliconix P-Channel 30-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 0300L 2.5 @ VGS = –12 V –2 to –4.5 –0.32 0300LS 2.5 @ VGS = –12 V –2 to –4.5 –0.5 2 @ VGS = –12 V

0401L

Abstract: VN0300L TN0401L TN0201L VN0300LS
Contextual Info: TN0201L/0401L, 0300L/LS Vishay Siliconix N-Channel 20-, 30-, 40-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TN0201L 20 1.2 @ VGS = 10 V 0.5 to 2 0.64 TN0401L 40 1.2 @ VGS = 10 V 0.5 to 2 0.64 0300L 30

25Q10

Contextual Info: TN0201 L/0401 L, 0300L/LS Vishay Siliconix N-Channel 20-, 30-, 40-V D-S MOSFETs PRODUCT SUMMARY Part Number V GS{«h)(V) b (A) TN0201L 20 1.2 @ V qs = 10 V 0.5 to 2 0.64 TN0401L 40 1.2 @ V qs = 10 V 0.5 to 2 0.64 0300L 30 1.2 @ VGS= 10 V 0.8 to 2.5 0.64

pj 89 diode

Abstract: HV7708PG HV7808 pj 44 diode HV5808 VQ10003 VN 300 tp2106 220v ac to 9v dc converter pj 56 diode
Contextual Info: M Supertex m e. Selector Guides MOSFETs S upertex enhancem ent- and depletion-m ode MOSFETs, utilizing vertical and lateral double-diffused processes, are suitable for a w ide variety of applications. They feature low capacitance for ease of drive and low gate-source threshold voltages fo r direct

0300L

Contextual Info: VN0300 LJ} Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ ^DS ON B V dqs (max) 30V 1.2£i If Standard Commercial Devices 1.0A Free from secondary breakdown Low pow er drive requirement □ E a s e of paralleling

0300L

Abstract: 70217 marking code Sk transistors
Contextual Info: 0300L/LS, VQ2001J/P Vishay Siliconix P-Channel 30-V D-S MOSFETs PRODUCT SUMMARY Part Number r DS(on) M a * (Î2) v GS(th) (V) Id (A) 0300L 2.5 V q S = - 1 2 V - 2 to -4 .5 -0 .3 2 0300LS 2 .5 ® V a s = -1 2 V - 2 to -4 .5 -0 .5 2 @ V gs = - 1 2 V

0300l

Abstract: Q700
Contextual Info: 0300L/VN50300T_ Vishay Siliconix VISHAY N-Channel 500-V D-S MOSFETs PRODUCT SUM MARY Part Number V (B R )D SS M i n ( V ) 0300L VGS<lh)(V) Id (A) 300 @ VGs = 10 V 1 to 4.5 0.033 300 @ VGs = 10 V 1 to 4.5 0.022 Max (Q) lD S (o n >

Contextual Info: Supertex inc. VN0300 N-Channel Enhancement-Mode Vertical DMOS FET General Description Features ►► ►► ►► ►► ►► ►► ►► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven,

TN0201L

Contextual Info: TN0201L/0401L, 0300L/LS Vishay Siliconix N-Channel 20-, 30-, 40-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TN0201L 20 1.2 @ VGS = 10 V 0.5 to 2 0.64 TN0401L 40 1.2 @ VGS = 10 V 0.5 to 2 0.64 0300L 30

VP0300L

Abstract: VP0300LS AN804 VQ2001J VQ2001P 0300l
Contextual Info: 0300L/LS, VQ2001J/P Vishay Siliconix P-Channel 30-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 0300L 2.5 @ VGS = –12 V –2 to –4.5 –0.32 0300LS 2.5 @ VGS = –12 V –2 to –4.5 –0.5 2 @ VGS = –12 V

0230200L

Abstract: 0230300L 0230400L 0230500L 0230600L
Contextual Info: Silicon Controlled Rectifier Series 0 2 3 B- Dim. Inches CH N ote 2 í¿. Min. Max. Min. Max. Notes 0.495 0.068 0.150 0.705 0.350 0.345 0.600 0.070 0.050 0.500 0.505 0.080 0.160 0.754 0.374 0.380 0.714 0.087 0.065 0.503 12.57 1.73 3.81 17.91 8.89 8.76 15.24

AN804

Abstract: VP0300L VP0300LS VQ2001J VQ2001P 1g1s
Contextual Info: 0300L/LS, VQ2001J/P Vishay Siliconix P-Channel 30-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 0300L 2.5 @ VGS = –12 V –2 to –4.5 –0.32 0300LS 2.5 @ VGS = –12 V –2 to –4.5 –0.5 2 @ VGS = –12 V