A022309 Search Results
A022309 Datasheets Context Search
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Contextual Info: TP2435 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling |
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tp2435dsfp-tp2435a022309 | |
TN2435Contextual Info: TN2435 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This |
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tn2435dsfp-tn2435a022309 | |
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Contextual Info: TN2130 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance and high gain |
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tn2130dsfp-tn2130a022309 | |
SOT-23 IP
Abstract: TP2104 Diode SOT-23 marking 3V
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tp2104dsfp-tp2104a022309sot-23 ip+1 | |
TP0620
Abstract: sitp
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tp0620dsfp-tp0620a022309sitp | |
SOT-23 IP
Abstract: TN2130K1-G 125OC TN2130 mos n-channel SOT-23
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tn2130dsfp-tn2130a022309sot-23 ip+3 | |
SITP
Abstract: Tp0606 TP0606N3-G
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tp0606dsfp-tp0606a022309sitp+1 | |
SITP
Abstract: TP0604 TP0604N3 SOW MARKING
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tp0604dsfp-tp0604a022309sitp+2 | |
tp5lw
Abstract: TP2502 TP2502ND
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tp2502125pfdsfp-tp2502a022309+2 | |
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Contextual Info: TN0606 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold - 2.0V max. High input impedance Low input capacitance - 100pF typical Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage |
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tn0606100pfdsfp-tn0606a022309 | |
TP2435Contextual Info: TP2435 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This |
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tp2435dsfp-tp2435a022309 | |
tp5d
Abstract: tp2540n8-g SITP TP2540 TP2540ND
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tp2540125pfdsfp-tp2540a022309+4 | |
TN0604WG-G
Abstract: 75E1 TN0604 TN0604N3-G
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tn0604140pfdsfp-tn0604a022309+3 | |
SIVN0300L
Abstract: 0300l VN0300 0300L to92
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vn0300dsfp-vn0300a022309sivn0300l+2 | |
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Contextual Info: VN0300 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities |
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vn0300dsfp-vn0300a022309 | |
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Contextual Info: TN2535 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold High input impedance Low input capacitance 125pF max. Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage This low threshold, enhancement-mode (normally-off) |
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tn2535125pfdsfp-tn2535a022309 | |
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Contextual Info: TN2510 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This |
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tn2510125pfdsfp-tn2510a022309 | |
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Contextual Info: TP0620 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This |
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tp0620dspd-to92tapingspecb070610 | |
TP2424Contextual Info: TP2424 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This |
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tp2424dsfp-tp2424a022309 | |
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Contextual Info: TD9944 Dual N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This |
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td9944125pfdsfp-td9944a022309 | |
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Contextual Info: VN0808 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination |
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vn0808dsfp-vn0808a022309 | |
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Contextual Info: TP5335 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description The Supertex TP5335 is a low threshold enhancementmode normally-off transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device |
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tp5335dsfp-tp5335a022309 | |
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Contextual Info: TP2424 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling |
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tp2424dsfp-tp2424a022309 | |
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Contextual Info: TP2104 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling |
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tp2104dsfp-tp2104a022309 | |