TP2435 Search Results
TP2435 Datasheets (4)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| TP2435 | Supertex | P-Channel Enhancement-Mode Vertical DMOS FETs | Original | 502.41KB | 4 | ||
| TP2435N8 | Supertex | P-Channel Enhancement-Mode Vertical DMOS FET | Original | 502.42KB | 4 | ||
| TP2435N8-G | Microchip Technology | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 350V 0.231A SOT89-3 | Original | 599.44KB | |||
| TP2435NW | Supertex | P-Channel Enhancement-Mode Vertical DMOS FET | Original | 502.42KB | 4 |
TP2435 Price and Stock
Microchip Technology Inc TP2435N8-G- Tape and Reel (Alt: TP2435N8-G) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TP2435N8-G | Tape & Reel | 10,000 | 8 Weeks | 2,000 |
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TP2435N8-G | Tape & Reel | 2,000 |
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TP2435N8-G | Bulk | 2,000 |
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TP2435N8-G | Tape & Reel | 1,000 | 8 Weeks |
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TP2435N8-G |
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TP2435N8-G | 11 Weeks | 2,000 |
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TP2435N8-G | 10 Weeks | 2,000 |
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TP2435N8-G |
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TP2435 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
TP2435Contextual Info: TP2435 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 55 55 11 ± 1.5 Au 1 (mils) TP2435 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si |
Original |
tp2435a020309 | |
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Contextual Info: TP2435 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This |
Original |
tp2435dsfp-tp2435a091408 | |
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Contextual Info: TP2435 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling |
Original |
tp2435dsfp-tp2435a022309 | |
TP2435Contextual Info: TP2435 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This |
Original |
tp2435dsfp-tp2435a022309 | |
TP2435
Abstract: TP2435N8 TP2435NW
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Original |
tp2435o-243aa-350v-800ma+5 | |
TP2435Contextual Info: Supertex inc. TP2435 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 55 55 11 ± 1.5 Au 1 (mils) TP2435 1 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si Bonding Pad Description |
Original |
tp2435a031610 | |
TP2435
Abstract: TP2435N8 TP2435NW
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Original |
tp2435o-243aa-350v-800ma+4 | |
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Contextual Info: Supertex inc. TP2435 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ►► Low threshold ►► High input impedance ►► Low input capacitance ►► Fast switching speeds ►► Free from secondary breakdown ►► Low input and output leakage |
Original |
tp2435dsfp-tp2435b081413 | |
TP2435N8Contextual Info: TP2435 TP2435 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information * Order Number / Package BVDSS / RDS ON VGS(th) ID(ON) BVDGS (max) (max) (min) TO-243AA* Die* -350V 15Ω -2.4V -800mA TP2435N8 TP2435NW Same as SOT-89. Product supplied on 2000 piece carrier tape reels. |
Original |
tp2435-350v-800mao-243aa+4 | |
sot-89 na
Abstract: Marking N8 diode sot-89 marking code marking oc diode sot89
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Original |
tp2435o-243aaot-89o-243+6 | |
Backlight Drivers
Abstract: P271 tp0610 TN2105 HV9123 Ring generator HV9112 LCD shutter
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OCR Scan |
hv300/hv310hv301/hv311hv302/hv312hv100/hv101+14 | |
LG 42 tContextual Info: TP2424 TP2424 Low Threshold Pre-Release Information P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / RDS ON VGS(th) ID(ON) BVDGS (max) (max) (min) TO-243AA* -240V 8.0Ω -2.4V -800mA TP2424N8 * Same as SOT-89. |
Original |
tp2424-240vot-89-800ma+5 | |
TO243AA
Abstract: TO-243AA tn0604n TO-236AB oc sot-89 TC2320TG TN2130K1-G LND150N8-G VN0104N3-G TO-236-AB
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Original |
2n7000-g2n7002-gdn1509n8-gdn2470k4-g+16 | |
AR5212
Abstract: ar5312 diode 39b2 AR5112 AR5213 AR5211 st c739 FD507 U508-3 AR533 Ct516
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isl6225vccar5212ar5312diode 39b2+7 | |
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pj 72 diode
Abstract: pj 49 diode pj 44 diode ic 7pin dip PWM Converter pj 89 diode 9v 200 ohm relay P248L VP0808 vp1550 pj 85 lv
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OCR Scan |
vp1550vp2106vp2110vp2206+13 | |
DN2540N5
Abstract: HT0440LG TN2130K1-G hv5308pj-b TN2510N8 HT0440LG-G LR8N3-G LR645LG-G DN2530N3-G LR8N3
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Original |
2n70002n70022n7008dn2470k4+15 | |
TP0610T
Abstract: SOT-89 N2 N2 SOT-23 sot-89 VP0109 LP0701 TP0604 TP0606 TP0620 TP2104
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Original |
lp0701an-d14tp0604tp0606+10 | |
HV9961
Abstract: 2N7002 MARKING 1702 HV9963 HV9910 hv9910b SR087 str 6655 STR 6656 DN2450 HV509
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Original |
product25hv99612n7002 marking 1702hv9963+7 | |
PLCC-6 5050
Abstract: P-Channel mosfet 400v to220 pj 84 elmwood 2450 MOSFET 400V depletion p channel 240v n-channel depletion mosfet mosfet driver 400v ks 4290 P-Channel Depletion-Mode HT0440LG
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sa146rsplcc-6 5050p-channel mosfet 400v to220pj 84+7 | |
b712 smd
Abstract: schematic diagram inverter 2000w IC25N040 MT702 CT712 MHN2200AT R888 SMB diode tp2256 Tp2350 c840 dell
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sfd-p10kscd-p10k24sdd-p10k8srw-p10k8+16 | |
STR 6656
Abstract: HV509 str 6655 pj 899 diode HV9910 K 3264 fet transistor tray qfn 7x7 diode PJ 966 relay 4098 cell phone detector
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Original |
str 6656hv509str 6655pj 899 diode+6 | |
ic str wg 252
Abstract: HV9961 hv9931 HV9910B HV9910 str 6655 HV9919 pj 899 diode BIBRED STR 6656
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Original |
ic str wg 252hv9961hv9931hv9910b+6 | |