VP2106 Search Results
VP2106 Result Highlights (2)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CDCLVP2106RHAT | Texas Instruments | Low Jitter, Dual 1:6 Universal-to-LVPECL Buffer 40-VQFN -40 to 85 |
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| CDCLVP2106RHAR | Texas Instruments | Low Jitter, Dual 1:6 Universal-to-LVPECL Buffer 40-VQFN -40 to 85 |
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VP2106 Datasheets (5)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| VP2106 | Supertex | P-Channel Enhancement-Mode Vertical DMOS FETs | Original | 463.83KB | 4 | ||
| VP2106N3 | Supertex | P-Channel Enhancement-Mode Vertical DMOS FET | Original | 463.83KB | 4 | ||
| VP2106N3 | Supertex | P-Channel Enhancement-Mode Vertical DMOS FETs | Original | 30.19KB | 4 | ||
| VP2106N3-G | Microchip Technology | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 60V 0.25A TO92-3 | Original | 610.15KB | |||
| VP2106ND | Supertex | P-Channel Enhancement-Mode Vertical DMOS FETs | Original | 30.19KB | 4 |
VP2106 Price and Stock
Microchip Technology Inc VP2106N3-GTrans MOSFET P-CH Si 60V 0.25A 3-Pin TO-92 Bag |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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VP2106N3-G | 3,100 | 100 |
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| VP2106N3-G | 1,000 | 1,000 |
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| VP2106N3-G | 370 | 94 |
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| VP2106N3-G | 82 | 15 |
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VP2106N3-G | Bulk | 1 |
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| VP2106N3-G | Bag | 4 Weeks | 1,000 |
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VP2106N3-G | 1,890 |
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VP2106N3-G | 1,000 | 4 Weeks | 1,000 |
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| VP2106N3-G | 82 | 4 Weeks | 1 |
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VP2106N3-G | Bulk | 1,314 | 1 |
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| VP2106N3-G | Bulk | 17 | 1 |
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VP2106N3-G | Bulk | 10 | 9 Weeks | 1 |
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VP2106N3-G | Bag | 18,710 | 6 Weeks |
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VP2106N3-G | 3,158 |
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VP2106N3-G | 6 Weeks | 1,000 |
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VP2106N3-G | 5 Weeks | 1,000 |
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VP2106N3-G | 3,158 |
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Diodes Incorporated ZVP2106A- Bulk (Alt: 85K9995) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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ZVP2106A | Bulk | 1 |
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| ZVP2106A | Bulk | 4,000 |
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ZVP2106A | 3,748 |
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ZVP2106A | Bulk | 15,452 | 1 |
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ZVP2106A | Bulk | 366 | 52 Weeks | 1 |
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ZVP2106A | 1 |
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ZVP2106A | 54 Weeks | 4,000 |
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SiTime Corporation 8SLVP2106ANLGI/W- Tape and Reel (Alt: 8SLVP2106ANLGI/W) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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8SLVP2106ANLGI/W | Tape & Reel | 33 Weeks | 5,000 |
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Diodes Incorporated ZVP2106ASTZ- Tape and Reel (Alt: ZVP2106ASTZ) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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ZVP2106ASTZ | Tape & Reel | 2,000 |
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ZVP2106ASTZ | 3,663 |
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ZVP2106ASTZ | Cut Tape | 3,014 | 1 |
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| ZVP2106ASTZ | Tape & Reel | 3,014 | 100 |
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ZVP2106ASTZ | Bulk | 10 |
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ZVP2106ASTZ | 1 |
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ZVP2106ASTZ | 54 Weeks | 2,000 |
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SiTime Corporation 8SLVP2106ANLGI- Trays (Alt: 8SLVP2106ANLGI) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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8SLVP2106ANLGI | Tray | 33 Weeks | 490 |
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VP2106 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: VP2106 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds High input impedance and high gain Excellent thermal stability |
Original |
vp2106dsfp-vp2106a012409 | |
VP2106
Abstract: VP2106N3 VP2110 VP2110K1 VP2110ND
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Original |
vp2106vp2110o-236abvp2106n3+4 | |
VP2106Contextual Info: VP2106 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 30 30 8.0 ± 1.0 Au 1 (mils) VP2106 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain |
Original |
vp2106a022009 | |
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Contextual Info: VP2106 VP2110 Superte jc¡ne. P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss/ BV Order Number / Package ^DS ON ' d (ON) (max) (min) TO-92 TO-236AB* Diet 12fi -0.5A VP2106N3 — VP2106ND P1 A * VP2110ND where * = 2-week alpha date code |
OCR Scan |
vp2106vp2110vp2106n3o-236ab+6 | |
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Contextual Info: Supertex inc. VP2106 P-Channel Enhancement-Mode Vertical DMOS FETs General Description Features ►► ►► ►► ►► ►► ►► ►► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, |
Original |
vp2106dsfp-vp2106c082313 | |
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Contextual Info: VP2106 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► The Supertex VP2106 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing |
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vp2106dsfp-vp2106a091508 | |
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Contextual Info: VP2106 VP2110 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) TO-92 TO-236AB* Die† Product marking for SOT-23: -60V 12Ω -0.5A VP2106N3 — — P1A❋ -100V 12Ω -0.5A |
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vp2106vp2110o-236abot-23+4 | |
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Contextual Info: ^ Supertex inc. VP2106 VP2110 P-Channel Enhancement-Mode Vertical DMOS FETs BVdss/ ^DS ON B V dos (max) -60V 120 -100V If Ordering Information_ _ _ -0.5A -0.5A 120 Order Number / Package TO-92 DICE* TO-236AB* VP2106N3 VP2106ND - VP2110ND VP2110N3 |
OCR Scan |
vp2106vp2110-100vvp2106n3+6 | |
SIVP
Abstract: VP2106
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Original |
vp2106dsfp-vp2106a012409sivp | |
MARKING P1a
Abstract: VP2110N3
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OCR Scan |
vp2106vp2110vp2106n3vp2110n3+7 | |
VP2106Contextual Info: Supertex inc. VP2106 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 30 30 8.0 ± 1.0 Au 1 (mils) VP2106 1 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si Bonding Pad Description |
Original |
vp2106a031610 | |
VP2106
Abstract: VP2106N3 VP2110 VP2110K1 VP2110ND
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Original |
vp2106vp2110o-236abot-23+4 | |
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Contextual Info: Supertex inc. VP2106 P-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds |
Original |
vp2106dsfp-vp2106b042911 | |
VP2110N3
Abstract: VP21A vp2104
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OCR Scan |
vp21a-100vvp2104n3vp2106n3+5 | |
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transistors N3Contextual Info: VP2106 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► The Supertex VP2106 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing |
Original |
vp2106dsfp-vp2106a020408transistors n3 | |
VP2110N3
Abstract: VP2106 VP2106N3 VP2106ND VP2110 VP2110K1 VP2110ND 944 SOT23
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Original |
vp2106vp2110o-236abot-23+7 | |
VP2110
Abstract: VP2110K1 VP2110ND VP2106 VP2106N3 VP2106ND
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vp2106vp2110o-236abot-23+5 | |
Backlight Drivers
Abstract: P271 tp0610 TN2105 HV9123 Ring generator HV9112 LCD shutter
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OCR Scan |
hv300/hv310hv301/hv311hv302/hv312hv100/hv101+14 | |
TN0604N3
Abstract: HV5808 VQ1000 VP2210 HV50530 HV5708 TP0606N3 VP0635N5 VQ1001 replacement 2N6659 supertex
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2n6659vn2210n2tn0104n32n7007+16 | |
tda8362b
Abstract: OM8384J OM8383S TDA8363C msc 1697 BGY252 tda9155 PHILIPS OM8383S tda5331t BGY262
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1n4003id1n4005g1n4006g30-jun-02+12 | |
TDA8361E
Abstract: tda8362e VY17169-2 PCF7943 PCF7943AT ON4292 P87C380AER PCF7943AT/1091C420 PCF7943AT/1091C315 TDA8359J equivalent
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vy27329-230-sep-0230-dec-02vy27340a2+12 | |
TO243AA
Abstract: TO-243AA tn0604n TO-236AB oc sot-89 TC2320TG TN2130K1-G LND150N8-G VN0104N3-G TO-236-AB
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2n7000-g2n7002-gdn1509n8-gdn2470k4-g+16 | |
TCA780
Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
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1n32451n3611gp1n3612gp1n3613gp+16 | |
mosfet cross reference
Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
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t0-92options4206azvn4206czvn4206e+15 | |