TN0604 Search Results

TN0602

Contextual Info: _ TN0602 TN0604 _ te x m e ._ Low Threshold S u p m N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ ^DS O N ' d (ON) VGS(th) b v dgs (max) (min) (max) TO-92 SOW-20* Diet 20V 0.75SÌ

marking n3

Abstract: TN0604N3 75E1 MS-013 TN0604 TN0604N3-G TN0604WG-G n-channel fet to-92
Contextual Info: TN0604 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

b0705

Contextual Info: Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► TN0604 General Description Low threshold 1.6V max. High input impedance Low input capacitance (140pF typical) Fast switching speeds Low on-resistance

TN0604

Contextual Info: TN0604 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 65 50 11.0 ± 1.5 Au 1 (mils) TN0604 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain

Contextual Info: Supertex inc. TN0604 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► General Description Low threshold 1.6V max. High input impedance Low input capacitance (140pF typical) Fast switching speeds Low on-resistance

Contextual Info: TN0602 TN0604 Low Threshold ßi Super tex inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information * BVDSS/ BV dgs ^DS ON (max) 20V 0.75a 20V 40V 40V 40V Same as TO-92 SOW-20* DICEt 1.6V — TN0602N3 — TN0602ND 0.850 4.0A 1.6V TN0602N2 —

Contextual Info: TN0604N3 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)40 V(BR)GSS (V)20 I(D) Max. (A)1.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)4.6 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)1.0 Minimum Operating Temp (øC)-55

TN0520N3

Abstract: TN0602N2 TN0204N2 TN0524N2 tn0620n2 TN0202N3 TN0202ND TN0204N3 TN0204ND TN0520N2
Contextual Info: - 332 - f Ta=25cC y Vds m % tt € or f Vdg it TN0202N2 TN0202N3 TN0202ND TNQ2Q4N2 TN0204N3 TN0204ND TN0520N2 TN0520N3 TN0520ND TN0524N2 TN0524N3 TN0524ND TN0602N2 TNÛ6Q2N3 TN0602ND TN06Û4N2 TN0604N3 TN0604ND TN0604WG TN0606N2 TN0606N3 TN0606N5 TN06O6NO

TRANSISTOR LIZ

Contextual Info: TN0604 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

n-channel fet to-92

Abstract: SOW-20 TN0604 TN0604N3 TN0604WG siemens fet to92
Contextual Info: TN0604WG Low Threshold N-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) VGS(th) (max) 40V 0.75Ω 4.0A 40V 1.0Ω 4.0A Order Number / Package TO-92 SOW-20* 1.6V TN0604N3 — 1.6V — TN0604WG

SOW-20

Abstract: TN06L
Contextual Info: TN0604WG Lji Supertex inc. Surface Mount Low Threshold N-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information BVdss/ b v dgs Order Number / Package R 0S ON ^ a x 40V 1.0£2 SOW-20* TN0604WG * S a m e a s S 0 - 2 0 with 3 0 0 mil w id e body.

S4BV

Contextual Info: Supertex inc. TN0604WG v. ; ; ,i i.;^ il Old N-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information B V oss Order Number / Package / BVdos ^ D S ON ^ a X 40V SOW-20* i.o n TN0604WG * Same as SO-20 with 300 mil wide body. Features

Contextual Info: TN0604 Supertex inc. Low Threshold N-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information Order Num ber / Package b v dss/ b v dgs ^DS ON ^ 3X 40V SOW -20* 1.0ß TN0604W G * Same as S 0-20 with 300 mil wide body. Features Advanced DMOS Technology

Contextual Info: TN0604 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

TN0604N3-G

Contextual Info: Supertex inc. TN0604 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► General Description Low threshold 1.6V max. High input impedance Low input capacitance (140pF typical) Fast switching speeds Low on-resistance

Contextual Info: Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► TN0604 General Description Low threshold 1.6V max. High input impedance Low input capacitance (140pF typical) Fast switching speeds Low on-resistance

Contextual Info: Supertex inc. TN0604 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold 1.6V max. High input impedance Low input capacitance (140pF typical) Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage

TN0604 equivalent

Abstract: TN0604 A0317 supertex
Contextual Info: Supertex inc. TN0604 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 65 50 11.0 ± 1.5 Au 1 (mils) TN0604 1 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si Bonding Pad Description

sitn

Abstract: marking n3 TN0604N3-G 125OC TN0604 TN0604WG-G 3V02 D0804 SiTN 06
Contextual Info: Supertex inc. TN0604 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

P-Channel IGBT

Abstract: AN-D09 diode wg application notes transistors IGBT TP0604 Complementary MOSFETs TC1550 TC2320 TC6320
Contextual Info: Selector Guide Enhancement Mode MOSFET Arrays Includes Low Threshold MOSFETs N-Channel Device Channels BVDSS RDS(ON) max typical CISS VGS(th) (V) (Ω) (pF) (V) min max Package Options Application Notes TD9944 2 240 6.0 65 2.0 8-Lead SOIC (TG) - TN0604 4

2N7010

Abstract: diode 2U 14 PWS726 diode 2U PWS740-2 PWS750-4U 2N7008 PWS750-2U PWS740 2u 45 diode
Contextual Info: PWS750 Isolated, Unregulated DC/DC CONVERTER COMPONENTS FEATURES APPLICATIONS ● 100% TESTED FOR HIGH-VOLTAGE BREAKDOWN ● COMPACT-SURFACE MOUNT ● MULTICHANNEL OPERATION ● INDUSTRIAL PROCESS CONTROL EQUIPMENT ● GROUND-LOOP ELIMINATION ● PC-BASED DATA ACQUISITION

tn0604n2

Contextual Info: T N 06 L ßi S u p e r te x inc . Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVdss/ R d S(ON ta(ON) V GS(th) b v dgs (max) (min) (max) TO-39 TO-92 SOW-20* DICE* 20V 0.75a 4.0A 1.6V — TN0602N3

VP1304N2

Abstract: TP2540ND VN1304N3 VP3203N3 LND150N8 VN3205N5 VN1310N3 TN2510N8 TN0102N2 VP1306N2
Contextual Info: _ _ fflpSupertex inc. Device Page # Device Page # Device A lp h a n u m e ric Index Page # Device Page# 2N7002 BSS123 DN2535N2 DN2535N3 DN2535N5 20 24 28 28 28 TN2106K1 TN2106N3 TN2124K1 TN2501N8 TN2501ND 57 57 61 63 63 TP2504ND TP2506ND TP2510N8 TP2510ND

Contextual Info: TC0604 Supertex inc. Low Threshold Complementary Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information_ BV DSS/ R d s o n M a x b v dgs Q 1 + Q 2 or Q 3 + Order Number / Package SOW -20* 3.0Q 40V TC0604WG * Same as S 0-20 with 300 mil wide body.