140PF Search Results

b0705

Contextual Info: Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► TN0604 General Description Low threshold 1.6V max. High input impedance Low input capacitance (140pF typical) Fast switching speeds Low on-resistance

Contextual Info: Supertex inc. TN0604 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► General Description Low threshold 1.6V max. High input impedance Low input capacitance (140pF typical) Fast switching speeds Low on-resistance

TN0604N3-G

Contextual Info: Supertex inc. TN0604 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► General Description Low threshold 1.6V max. High input impedance Low input capacitance (140pF typical) Fast switching speeds Low on-resistance

Contextual Info: Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► TN0604 General Description Low threshold 1.6V max. High input impedance Low input capacitance (140pF typical) Fast switching speeds Low on-resistance

Contextual Info: Supertex inc. TN0604 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold 1.6V max. High input impedance Low input capacitance (140pF typical) Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage

TSM40N03P

Contextual Info: TSM40N03PQ56 30V N-Channel Power MOSFET PDFN56 PRODUCT SUMMARY Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain VDS V 30 Features ● ● ● ● RDS(on)(mΩ) ID (A) 4.5 @ VGS =10V 19 5.8 @ VGS =4.5V 16 Block Diagram

TN0602

Contextual Info: _ TN0602 TN0604 _ te x m e ._ Low Threshold S u p m N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ ^DS O N ' d (ON) VGS(th) b v dgs (max) (min) (max) TO-92 SOW-20* Diet 20V 0.75SÌ

tn0604n2

Contextual Info: T N 06 L ßi S u p e r te x inc . Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVdss/ R d S(ON ta(ON) V GS(th) b v dgs (max) (min) (max) TO-39 TO-92 SOW-20* DICE* 20V 0.75a 4.0A 1.6V — TN0602N3

Contextual Info: -Ætttrun Ä \Y Ä [L VERY HIGH VOLTAGE, FAST SWITCHING Devices. Inc. NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR CHIP NUM BER (FORMERLY 42 CONTACT METALLIZATION B ase a n d emitter: > 30,000 A Aluminum Collector: Gold (Polished silicon or "C hrom e Nickel S ilver" also available)

ceramic filter W55F

Abstract: murata 55E ceramic filter Murata SF 455 D CFUCF455KD1X-R0 murata ceramic filter 55d TOKO 455KHz filter a 55e w55c CFWLB455KEFA-B0 marking code smd toshiba murata 55D ceramic filter
Contextual Info: Please read CAUTION and Notice in this catalog for safety. This catalog has only typical specifications. Therefore you are requested to approve our product specification or to transact the approval sheet for product specification, before your ordering. P05E10.pdf 01.11.14

Contextual Info: H D63085-Document Image Compression and Expansion Processor D I C E P The DICEP is an LSI that performs com pres­ sion (encoding) and expansion (decoding) of th e digital (tw o-value) data rep resen tin g a docum ent im age. The DICEP is u sed in G3 and G4 facsim ile

RD07MVS1

Abstract: RD07MVS1-101 T112 3M Touch Systems
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 OUTLINE DRAWING RD07MVS1 is a MOS FET type transistor

RD07MVS1

Abstract: RD07MVS1B T112 3M Touch Systems
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1B Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 2.0+/-0.05 2 3.5+/-0.05 1.0+/-0.05

Ceramic Capacitors 104

Abstract: mev-50a DXW21BN7511S SAYFP1G95AA0B00 ck 66 ul94v-0 lcd SAYFP897MCA0B00 SAFEB1G57KE0F00 SAWEN1G84 murata enc-03r MA300D1-1
Contextual Info: MURATA PRODUCTS 2009-2010 2009-2010 MURATA PRODUCTS !Note • This PDF catalog is downloaded from the website of Murata Manufacturing co., ltd. Therefore, it’s specifications are subject to change or our products in it may be discontinued without advance notice.

RD07MVS1

Abstract: RD07MVS1-101 T112 07MVS1 3080D RD07MVS Rd07mvs1101
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD07MVS1 is a MOS FET type transistor

LC9943

Abstract: 30462 LB8904M
Contextual Info: Ordering number:ENN3046B Monolithic Digital IC LB8904M CCD Clock Driver Overview Package Dimensions The LB8904M is a monolithic IC designed to drive clock gates of a CCD image sensor LC9943, etc. at high speed. unit:mm 3073B-MFP30SD [LB8904M] Features 1

Contextual Info: MCC TM Micro Commercial Components SB220 Thru SB260
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • x x x x x Lead Free Finish/Rohs Compliant Note1 ("P"Suffix designates

Contextual Info: TPS54290, TPS54291, TPS54292 www.ti.com SLUS973 – OCTOBER 2009 1.5-A/2.5-A Dual, Fully-Synchronous Buck Converter With Integrated MOSFET Check for Samples :TPS54290 TPS54291 TPS54292 FEATURES APPLICATIONS • • • • • • • • 1 2 • • • •

TPS65300-Q1

Abstract: PSS302NZ B82462G4103MOOO buck converter 3kw PIC 1607
Contextual Info: TPS65300-Q1 www.ti.com SLVSBB6B – MARCH 2012 – REVISED APRIL 2012 3-MHz Step-Down Regulator and Triple Linear Regulators Check for Samples: TPS65300-Q1 FEATURES DESCRIPTION • The TPS65300-Q1 power supply is a combination of a single switch-mode buck power supply and three

RD07MVS1

Abstract: skam 199j 329J
Contextual Info: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-018-C Date : 12th Jun. 2003 Rev.date : 7th Jan. 2010 Prepared : M.Wada S.Kametani Confirmed : T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics RD07MVS1 RF characteristics data SUBJECT:

RD07MVS1-101

Abstract: RD07MVS1 T112 ID-750 RD07M D07MVS1 3M Touch Systems
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 OUTLINE DRAWING RD07MVS1 is a MOS FET type transistor

smd diode l232

Abstract: BTB48-12S25D c5t smd BTB05-12W12D btb12 application note BTB05-12W12S BTB48-12W12D BTB24-12S25D BTB05-05S60D BTB24-05S60S
Contextual Info: The Fifth Generation, Ultra Small Size, Isolated Type DC-DC Converter Beiinix_3Wait BTB Series BTB series is a thin, high efficiency, low noise isolated type DC-DC converter. To achieve miniaturization a new circuit was adopted. Circuit construction is made simple yet highly efficient.

ADD8710

Abstract: BUF11702 RU-28
Contextual Info: 10-Channel Gamma Buffer with VCOM Driver ADD8710 Single-supply operation: 4.5 V to 18 V Upper/lower buffers swing to VS/GND Gamma continuous output current: >10 mA VCOM peak output current: 250 mA Offset voltage: 12 mV Slew rate: 8 V/µs Unity gain stable with large capacitive loads

AC-326

Contextual Info: • asmais q d b o 23 m 45t ■ A -OS’ 19-/73 A COMPANY TYPE 224D Foil Tantalum Capacitors Foil Capacitors for +85°C and +125°C Operation Hermetically-Sealed, Rectangular Metal-Case T an talex OF SPRAGUE FEATURES High volumetric efficiency and a more reliable internal construction