TN0602N3 Search Results
TN0602N3 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| TN0602N3 | Unknown | FET Data Book | Scan | 55.23KB | 1 |
TN0602N3 Price and Stock
Supertex Inc TN0602N3 |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
TN0602N3 | 26 |
|
Get Quote | |||||||
TN0602N3 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
tn0604n2Contextual Info: T N 06 L ßi S u p e r te x inc . Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVdss/ R d S(ON ta(ON) V GS(th) b v dgs (max) (min) (max) TO-39 TO-92 SOW-20* DICE* 20V 0.75a 4.0A 1.6V — TN0602N3 |
OCR Scan |
tn0602n2tn0604n2tn0602n3tn0604n3+5 | |
|
Contextual Info: TN0602 TN0604 Low Threshold ßi Super tex inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information * BVDSS/ BV dgs ^DS ON (max) 20V 0.75a 20V 40V 40V 40V Same as TO-92 SOW-20* DICEt 1.6V — TN0602N3 — TN0602ND 0.850 4.0A 1.6V TN0602N2 — |
OCR Scan |
tn0602tn0604sow-20tn0602n3+6 | |
|
Contextual Info: TN0602N3 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)20 V(BR)GSS (V)20 I(D) Max. (A)1.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)4.6 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)1.0 Minimum Operating Temp (øC)-55 |
Original |
tn0602n3junc-case125 | |
TN0602N3
Abstract: TN0602 TN0602N2 SOW-20 TN0604N2 TN0602ND TN0604 TN0604N3 TN0604ND TN0604WG
|
Original |
tn0602tn0604sow-20tn0602n3+6 | |
TN0602N3
Abstract: TN0604N3 SOW-20 TN0602 TN0602ND TN0604 TN0604ND TN0604WG
|
Original |
tn0602tn0604sow-20tn0602n3+5 | |
TN0602Contextual Info: _ TN0602 TN0604 _ te x m e ._ Low Threshold S u p m N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ ^DS O N ' d (ON) VGS(th) b v dgs (max) (min) (max) TO-92 SOW-20* Diet 20V 0.75SÌ |
OCR Scan |
tn0602tn0604tn0602n3tn0604n3+6 | |
S0211
Abstract: VN03000 2SK738 nec 500t 2sk738 mosfet S0215 3N175 MPF6659 motorola *6659 2SK73
|
Original |
2n7109s0215zvn3302btn0102n3+13 | |
TCA780
Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
|
Original |
1n32451n3611gp1n3612gp1n3613gp+16 | |
mosfet cross reference
Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
|
Original |
t0-92options4206azvn4206czvn4206e+15 | |
TN0602N3
Abstract: TN2504N8 BATTERY CHARGE DISCHARGE INDICATOR CIRCUIT rechargeable battery charging efficiency 007C 1N4001 LM393N 500mAH LM393N battery "lead acid"
|
Original |
tn2504n8tn0602n3battery charge discharge indicator circuitrechargeable battery charging efficiency+6 | |
TN0602N3
Abstract: BATTERY CHARGE DISCHARGE INDICATOR CIRCUIT diode 1N4001 voltage limitations 1n4001 family INTRINSIC SAFE CIRCUIT 2k resistor 2 watt datasheet 6.8V lead gel battery 007C 1N4001
|
Original |
tn2504n8tn0602n3battery charge discharge indicator circuitdiode 1n4001 voltage limitations+7 | |
TN0602N2
Abstract: TN06L TN0602N3
|
OCR Scan |
tn0602n2tn0604n2tn0602n3tn0604n3+5 | |
HV50530PG
Abstract: hv9910p-g TN0604N3 HV5808PJ VN2460N8-G HV-801 HV801 VP0120N5 VN0360N5 TN0520N3
|
Original |
2n66592n7007an0332cgap0332cg+16 |