BS208 Search Results

Contextual Info: IflE SILICONIX INC D Ô55473S 0 0 1 4 0 3 ^ 4 • BS208 fT S iB c a n ix JLW in c o rp o ra te d T -2-7-Z5 P-Channel Enhancem ent-M ode MOS Transistor PRODUCT SUMMARY TO-92 V BR DSS (V) fDS(ON) ( Í1 ) Id (A) PACKAGE -2 0 0 14 - 0 .2 TO-92 RM BOTTOM VIEW 1 DRAIN

Contextual Info: BS208 P–CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR POWER SEMICONDUCTOR Features • • • • • High Breakdown Voltage High Input Impedance Fast Switching Speed Low Drain-Source On-Resistance Specially Suited for Telephone Subsets E A TO-92 B C Mechanical Data

BS208

Abstract: MDA709
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BS208 P-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor

bs208

Contextual Info: Philips Components Datasheet status Product specification dateof issue February 1991 BS208 P-channel enhancem ent m ode vertical D -M O S transistor PIN CONFIGURATION FEATURES PIN • Direct interface to C -M O S • High-speed switching • No secondary breakdown.

BS208

Contextual Info: BS208 P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR Features High Breakdown Voltage High Input Impedance Fast Switching Speed Low Drain-Source On-Resistance Specially Suited for Telephone Subsets TO-92 Mechanical Data_ • • • • Case: TO-92, Plastic

Contextual Info: BS208 VISHAY P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR T E M ir I/u POWEF SEMICONDUCTOR / Features High Breakdown Voltage High Input Impedance Fast Switching Speed Low Drain-Source On-Resistance Specially Suited for Telephone Subsets TO-92 Dim Min Max A

BS208

Abstract: BS-208
Contextual Info: BS208 DMOS Transistors P-Channel TO-92 FEATURES .142 (3.6) min. .492 (12.5) .181 (4.6) .181 (4.6) max. ∅ .022 (0.55) ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ High breakdown voltage High input impedance Low gate threshold voltage Low drain-source ON resistance

Contextual Info: BS208 P–CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR Features • · · · · High Breakdown Voltage High Input Impedance Fast Switching Speed Low Drain-Source On-Resistance Specially Suited for Telephone Subsets E A TO-92 B C Mechanical Data · · · · Case: TO-92, Plastic

BS208

Abstract: MB8075
Contextual Info: Philips Components Data sheet status Product specification date of issue February 1991 BS208 P-channel enhancement mode vertical D-MOS transistor PIN CONFIGURATION FEATURES • Direct interface to C-MOS • High-speed switching • No secondary breakdown.

BS208

Contextual Info: BS208 VISHAY P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR /Li T E M I ri I POWER SEMICONDUCTOR / Features High Breakdown Voltage High Input Impedance Fast Switching Speed Low Drain-Source On-Resistance Specially Suited for Telephone Subsets TO-92 Mechanical Data

BS-206

Abstract: BS-208 BS206 J162 ITT capacitance diode
Contextual Info: BS208 P-Channel Enhancement Mode DMOS Transistor Features - high breakdown voltage - high input impedance - low gate threshold voltage - low drain-source ON resistance - high-speed switching - no minority carrier storage time - CMOS logic compatible input

VP2410

Contextual Info: VPDV24 P-Channel Enhancement-Mode MOSFETs TYPE PACKAGE Single TO-92 TO-226AA • BS208 TP2410L, TP2010L VP2410L Single Chip • Available as VPDV2CHP SÖ.xd DEVICE TYPICAL CHARACTERISTICS O u tp u t C h a ra cte ristics fo r Low G a te Drive (m A) -2 -3

BS208

Contextual Info: BS208 P–CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR Features • · · · · High Breakdown Voltage High Input Impedance Fast Switching Speed Low Drain-Source On-Resistance Specially Suited for Telephone Subsets E A TO-92 B C Mechanical Data · · · · Case: TO-92, Plastic

transistor s70

Abstract: Marking S70 pin
Contextual Info: DMOS Transistors N-Channel Enhancement-Mode DMOS Transistors =TO-92 Plastic Package Type Pin Config. Maximum Drain-Source Voltage Maximum Continuous Drain Current Max. Power Dissipation at Tc = 25 °C Drain-Source ON Resistance ') Gate Threshold Voltage

BS138

Abstract: L00524B EN755 L00516D 0S527 extrusion Heatsinks 0SA36 0S509 BS005 heatsink catalogue aavid
Contextual Info: T H E M A X C L I P S YS T E M Clip and Rail Thermal Solutions for Power Semiconductors WWW.AAVIDTHERMALLOY.COM CONTENTS The Max Clip System™ Profiles . 2

TCA700y

Abstract: SAF1091 TCA700 SAK215 MSP3400 ACP2371-NI ADC2301E SAF1092 5.1 audio converter speech to text converter ic
Contextual Info: List of Types - Integrated Circuits ICs for Consumer Electronics Type Type Page CCD3000 CCU2050 CCU2050PI CCU2070 CCU2070PI CCU3000 CCU3001 CCU3002 CCU3004 CCU3005C/D/E CCU3008 SAA1293A TFP02065/ TVP02066 Closed-Caption-Decoder Central Control Unit Central Control Unit

mosfet cross reference

Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
Contextual Info: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is

BS192

Abstract: BS212 D 92 M - 03 DIODE D 92 M - 02 DIODE 10D3 2n3904, itt c 92 M - 02 DIODE bs189
Contextual Info: I T T CORP/ I T T CMPNTS 31E D • 4böEböH ÜQQ1 3 Q 7 T ■ VMOS NPN AND PNP TRANSISTORS N-Channel VMOS Transistors Enhancement-Mode MOSFETsfeaturing high input impedance, high power gain, fast switching times, CMOS compatibility, no second breakdown, no thermal runaway.

BS170V

Abstract: to-92 mosfet
Contextual Info: Mutt LEAD MOUNTED TRANSISTORS PNP TRAN SISTORS - EUROPEAN TYPES / TO-92 'y Type ^CÉÛ Number œ ;a w Volts EHU = C0B@VC8 r^NS-V-L:':. i :i- • V/mA max.V mA/mA max.nA V/mA max.pF V BC327 45 100-630 1/100 .07 500/50 100 45 100 5/10 typ-12 10 BC327-16 45 100-250

ITT9014C

Abstract: TCA700Y ITT9013H jc5010 PVPU2204 TCA700 TVP02066 SAA1094-2 SAK215 itt8050cu
Contextual Info: Alphanumerical List of Types Type Page 1N914 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 1N4148 1N4148S 1N4149 1N4149S 1N4150 1N4150S 1N4151 1N4151S 1N4448 1N4448S 1N4454 1N4454S 1N4731 to 1N4764 1N5226 to 1N5262 1N5226S to 1N5262S 1N5817 1N5817M 1N5818

Contextual Info: Philips Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal FETs P-CHANNEL VERTICAL D-MOSFETS ratinas typ number V DS max. V Ptot1) max. (mW) _ V QS(th) R DS(on) max. (mA) min. (V) max. (V) max.

TRANSISTOR DATASHEET D1555

Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
Contextual Info: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440

mosfet cross reference

Abstract: bs170 replacement VN10KM replacement CROSS REFERENCE 2n6661 BST72A replacement BSN10 "cross reference" BST72A CROSS equivalent of BS250 ZVNL110A cross reference vn10km cross
Contextual Info: MOSFET Cross Reference* Industry Part Number Supertex Part Number Industry Part Number Supertex Part Number Industry Part Number Supertex Part Number Industry Part Number Supertex Part Number 2N6660 2N6660 IRFF110 VN2210N2 VN0605T TN2106K1-G ZVN0540A VN0550N3-G

Philips tea1090

Abstract: tea1090 tea1402 pcf2705p philips TEA1090T SAA7321GP TDA2579A LMT 393 N TDA3653bq TEA5713
Contextual Info: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-41 DATED JUNE 30, 1999 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION PHILIPS LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODES COMMENTS