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    bc327-25 Datasheets

    bc327-25 datasheet (67)

    Part ECAD Model Manufacturer Description Type PDF
    BC327-25 Diotec Si-Epitaxial PlanarTransistors Original PDF
    BC327-25 Fairchild Semiconductor PNP EPITAXIAL SILICON TRANSISTOR Original PDF
    BC32725 Fairchild Semiconductor PNP EPITAXIAL SILICON TRANSISTOR Original PDF
    BC327-25 General Semiconductor Small Signal Transistor (PNP) Original PDF
    BC327-25 General Semiconductor General Purpose Bipolar Transistor, PNP, 45V, TO-92, 3-Pin Original PDF
    BC32725 Korea Electronics TRANS GP BJT PNP 45V 0.8A 3TO-92 Original PDF
    BC327-25 Motorola Amplifier Transistors(PNP) Original PDF
    BC327-25 On Semiconductor Amplifier Transistors Original PDF
    BC327-25 On Semiconductor BC327 - TRANSISTOR 800 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-11, TO-226AA, 3 PIN, BIP General Purpose Small Signal Original PDF
    BC327-25 Philips Semiconductors Small-signal Transistors Original PDF
    BC327-25 Philips Semiconductors PNP General Purpose Transistor Original PDF
    BC327-25 Philips Semiconductors PNP General Purpose Transistors Original PDF
    BC32725 Philips Semiconductors PNP General Purpose Transistors Original PDF
    BC327-25 Siemens PNP Silicon AF Transistor Original PDF
    BC327-25 Siemens PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) Original PDF
    BC327-25 STMicroelectronics SMALL SIGNAL PNP TRANSISTORS Original PDF
    BC327-25 STMicroelectronics SMALL SIGNAL PNP TRANSISTORS Original PDF
    BC327-25 Vishay Telefunken TRANS GP BJT PNP 45V 0.8A 3TO-92 Original PDF
    BC327-25 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    BC327-25 Continental Device India PNP Plastic Transistors Scan PDF
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    Diotec Semiconductor AG BC327-25

    BJT, TO-92, 45V, 800mA, PNP
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    DigiKey BC327-25 Ammo Pack 3,700,000 4,000
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    Diotec Semiconductor AG BC327-25BK

    BJT TO92BK 45V PNP 0.625W 150C
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    DComponents BC327-25BK

    TRANS PNP 45V 0.8A TO92
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    DigiKey BC327-25BK 30,000 1,250
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    onsemi BC32725TA

    TRANS PNP 45V 0.8A TO92-3
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    DigiKey BC32725TA Cut Tape 4,140 1
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    DComponents BC327-25

    TRANS PNP 45V 0.8A TO92
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    DigiKey BC327-25 3,848 25
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    bc327-25 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2006 - bc 7-25 pnp

    Abstract: BC327 32725 BC32 bc 7-40 pnp BC327-25 bc327 pin out diagram BC327-16 equivalent for BC327 BC327G
    Text: BC327, BC327-16, BC327-25 , BC327-40 Amplifier Transistors PNP Silicon http://onsemi.com , January, 2006 - Rev. 3 1 Publication Order Number: BC327/D BC327, BC327-16, BC327-25 , BC327 , BC327 BC327-16 BC327-25 BC327-40 (IC = -300 mA, VCE = -1.0 V) Base-Emitter On Voltage (IC = -300 , http://onsemi.com 2 5.0 10 20 50 100 BC327, BC327-16, BC327-25 , BC327-40 -1000 IC , VOLTAGE (VOLTS) Figure 7. Capacitances http://onsemi.com 3 -100 BC327, BC327-16, BC327-25


    Original     		PDF BC327, BC327-16, BC327-25, BC327-40 BC327/D bc 7-25 pnp BC327 32725 BC32 bc 7-40 pnp BC327-25 bc327 pin out diagram BC327-16 equivalent for BC327 BC327G

    2003 - BC327-25

    Abstract: BC327 BC327-40 BC33740 BC337-40 t d BC32725 BC327-25-AP BC327-40-AP BC337-25 BC337-40
    Text: BC327-25 BC327-40 ® SMALL SIGNAL PNP TRANSISTORS PRELIMINARY DATA Ordering Code Marking Package / Shipment BC327-25 BC327-25 TO-92 / Bulk BC327-25-AP BC327-25 TO-92 / Ammopack , February 2003 -1 A 625 mW -65 to 150 o C 150 o C 1/5 BC327-25 / BC327 , Current Gain I C = -100 mA for BC327-25 for BC327-40 s) t( V CE = -1 V fT Transition , V 400 600 80 MHz 10 pF BC327-25 / BC327-40 TO-92 MECHANICAL DATA mm DIM


    Original     		PDF BC327-25 BC327-40 BC327-25 BC327-25-AP BC327-40 BC327-40-AP BC327 BC33740 BC337-40 t d BC32725 BC327-25-AP BC327-40-AP BC337-25 BC337-40

    2004 - BC327 NATIONAL SEMICONDUCTOR

    Abstract: BC327 BC328 cbc327 BC337 BC327 hfe BC327 to92 BC327-16 BC327-16-BULK BC327-40
    Text: / Ammopack BC327-25 hFE, typ. 250 @ 100 mA BC327-25-BULK or BC327-25-TAP Bulk / Ammopack BC327 , mA BC327-25 hFE 160 250 400 V DC current gain (current gain grup - 40) - VCE , into three groups, -16, - 25 , and -40, according to their DC current gain. As complementary types, the , . 130 @ 300 mA BC328-16-BULK or BC328-16-TAP Bulk / Ammopack BC328- 25 hFE, typ. 200 @ 300 mA BC328- 25 -BULK or BC328- 25 -TAP Bulk / Ammopack BC328-40 hFE, typ. 320 @ 300 mA BC328


    Original     		PDF BC327 BC328 BC337 BC338 BC327-16 D-74025 19-May-04 BC327 NATIONAL SEMICONDUCTOR BC328 cbc327 BC327 hfe BC327 to92 BC327-16 BC327-16-BULK BC327-40

    2001 - BC327

    Abstract: BC327-16 BC327-25 BC327 equivalent BC327-40 BC327/BC327
    Text: ON Semiconductort BC327, BC327-16, BC327-25 , BC327-40 Amplifier Transistors PNP Silicon , ­ Continuous IC ­800 mAdc Total Device Dissipation @ TA = 25 °C Derate above 25 °C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25 °C Derate above 25 °C PD 1.5 12 , (TA = 25 °C unless otherwise noted) Characteristic Symbol Min Typ Max ­45 ­ ­ , nAdc Publication Order Number: BC327/D BC327, BC327­16, BC327­ 25 , BC327­40 ELECTRICAL


    Original     		PDF BC327, BC327-16, BC327-25, BC327-40 BC327 r14525 BC327/D BC327 BC327-16 BC327-25 BC327 equivalent BC327-40 BC327/BC327

    2005 - transistor c32725

    Abstract: c32725 c32740 BC327 C327 C32740 NPN transistor C32725 NPN transistor C32740 PNp transistor c32716 c32725 transistor transistor c32740
    Text: BC807- 25 ; BC807-25W; BC327-25 160 - 400 BC807-40; BC807-40W; BC327-40 250 - 600 , [1] BC807 5D* BC807-16 5A* BC807- 25 5B* BC807-40 5C* BC807W 5D* BC807-16W 5A* BC807-25W 5B* BC807-40W 5C* BC327 C327 BC327-16 C32716 BC327-25 , -25W; BC327-25 160 - 400 BC807-40; BC807-40W; BC327-40 250 - 600 DC current gain , added Table 5 Marking codes for BC327, BC327-16, BC327-25 and BC327-40 added Table 8 Typical value for


    Original     		PDF BC807; BC807W; BC327 BC807 BC817 BC807W OT323 SC-70 BC817W transistor c32725 c32725 c32740 BC327 C327 C32740 NPN transistor C32725 NPN transistor C32740 PNp transistor c32716 c32725 transistor transistor c32740

    bC328 philips

    Abstract: bc32 transistor BC327A BC327 BC338 BC327-16 BC328 BC337 BC337A BC338 TRANSISTOR
    Text: BC327-16 ) BC328-16 1 hFE 100 to 250 BC327-25 1 BC328- 25 1 hFE 160 to 400 BC327-40) BC328-40 j hFE 250 , max. 50 60 30 V Collector-emitter voltage (open base) ~vCEO max. 45 60 25 V Collector current (peak value) -'cm max. 1000 mA Total power dissipation up to Tamb = 25 °C ptot max. 800 mW Junction , -12.7 min =1= L diameter within 2.5 max is uncontrolled -J 0.49 max. t Capability approved to CECO , max. 45 60 25 V Emitter-base voltage (open collector) -Vebo max. 5 5 5 V Collector current (d.c.) -ic


    OCR Scan     		PDF BC327 BC327A BC328 BC327, BC327A, BC337, BC337A BC338 bC328 philips bc32 transistor BC327-16 BC337 BC338 TRANSISTOR

    102 TRANSISTOR

    Abstract: BC327 BC328 BC327A TRANSISTOR BC327-40 BC327-16 BC327-25 BC328-16 BC328-25 BC337
    Text: BC327A BC327-16 ) BC328-16 ) BC327-25 I BC328- 25 ) BC327-40 BC328-40 Transition frequency at f = 35 , Collector-emitter voltage (open base) ~vCEO max. 45 60 25 V Collector current (peak value) -'cm max. 1000 mA Total power dissipation up to Tg^ = 25 °C ptot max. 800 mW Junction temperature Ti max. 150 °C , voltage (open base) -lc = 10 mA ~vCEO max. 45 60 25 V Emitter-base voltage (open collector) ~vEBO max. 5 , current (peak value) -'bm max. 200 mA Total power dissipation at T^b = 25 °C UP t0 Tamb = 25 °c ptot


    OCR Scan     		PDF BC327 BC327A BC328 BC327, BC327A, BC328 BC337, BC337A BC338 BC327 102 TRANSISTOR BC327A TRANSISTOR BC327-40 BC327-16 BC327-25 BC328-16 BC328-25 BC337

    2009 - transistor c32725

    Abstract: c32725 c32740 C32740 PNp transistor datasheet C32740 NPN transistor C32725 NPN transistor C32716 c32725 transistor transistor c32725 pinning information C3274
    Text: ; BC807W; BC327 100 - 600 BC807-16; BC807-16W; BC327-16 100 - 250 BC807- 25 ; BC807-25W; BC327-25 160 - 400 BC807-40; BC807-40W; BC327-40 250 - 600 hFE [1] DC , [1] BC807 5D* BC807-16 5A* BC807- 25 5B* BC807-40 5C* BC807W 5D* BC807-16W 5A* BC807-25W 5B* BC807-40W 5C* BC327 C327 BC327-16 C32716 BC327-25 , -25W; BC327-25 160 - 400 BC807-40; BC807-40W; BC327-40 hFE 250 - 600 emitter-base


    Original     		PDF BC807; BC807W; BC327 BC807 BC817 BC807W OT323 SC-70 BC817W BC327 transistor c32725 c32725 c32740 C32740 PNp transistor datasheet C32740 NPN transistor C32725 NPN transistor C32716 c32725 transistor transistor c32725 pinning information C3274

    2009 - C32725 NPN transistor

    Abstract: C32740 NPN transistor C32740 C32716 C32725
    Text: ; BC807W; BC327 100 - 600 BC807-16; BC807-16W; BC327-16 100 - 250 BC807- 25 ; BC807-25W; BC327-25 160 - 400 BC807-40; BC807-40W; BC327-40 250 - 600 hFE [1] DC , [1] BC807 5D* BC807-16 5A* BC807- 25 5B* BC807-40 5C* BC807W 5D* BC807-16W 5A* BC807-25W 5B* BC807-40W 5C* BC327 C327 BC327-16 C32716 BC327-25 , 600 BC807-16; BC807-16W; BC327-16 100 - 250 BC807- 25 ; BC807-25W; BC327-25 160 -


    Original     		PDF BC807; BC807W; BC327 BC807 BC817 BC807W OT323 SC-70 BC817W BC327 C32725 NPN transistor C32740 NPN transistor C32740 C32716 C32725

    2002 - pin configuration Bc327

    Abstract: BC327 NPN transistor datasheet BC327 bc327 vishay BC338 pin configuration PNP transistor BC327 PNP BC327 BC328 transistors VISHAY
    Text: types are also available subdivided into three groups, -16, - 25 , and -40, according to their DC , . 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) Mechanical Data max. 0.022 (0.55) 0.098 ( 2.5 , Maximum Ratings & Thermal Characteristics Parameter Ratings at 25 °C ambient temperature unless , 30 V Collector-Emitter Voltage BC327 BC328 ­VCEO 45 25 V ­VEBO 5 V , Collector Current Base Current Power Dissipation at Tamb = 25 °C Thermal Resistance Junction to Ambient


    Original     		PDF BC327 BC328 O-226AA BC338 08-May-02 pin configuration Bc327 BC327 NPN transistor datasheet bc327 vishay pin configuration PNP transistor BC327 PNP BC327 BC328 transistors VISHAY

    bc327

    Abstract: bc328 BC327 motorola
    Text: BC327,-16,- 25 BC328,-16,- 25 3 EMITTER MAXIMUM RATINGS Rating Collector-Emitter Voltage , above 25 °C - 25 °C Symbol VC EO VCBO Vebo 'C Pd Pd Tstg BC327 -45 -50 -5.0 -800 625 5.0 1.5 12 - 5 5 to +150 BC328 - 25 -30 Unit Vdc Vdc Vdc mAdc mW mW/°C Watt mW/°C °C C A SE 29-04, STYLE 17 TO-92 (TO-226AA) Total Device Dissipation @ T q = 25 °C Derate above 25 °C Operating and Storage Junction Temperature Range , CHARACTERISTICS H a = 25 °C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector-Emitter


    OCR Scan     		PDF BC327 BC328 O-226AA) BC327 motorola

    BC327

    Abstract: BC328 BC337 BC338 C338 BC327-25
    Text: = -100 mA, VCE - -1.0 V) BC327/BC328 100 — 630 BC327-16/BC328-16 100 — 250 BC327-25 /BC328- 25 , MAXIMUM RATINGS Rating Symbol BC327 BC328 Unit Collector-Emitter Voltage VcEO -45 - 25 Vdc , -800 mAdc Total Device Dissipation @ T/\ = 25 "C Derate above 25°C PD 625 5.0 mW mwrc Total Device , ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.) BC327,-16,- 25 BC328,-16,- 25 CASE 29-04, STYLE , CHARACTERISTICS Collector-Emitter Breakdown Voltage dC-10 mA, Is = 0) BC327 BC328 V 25 — — Vdc


    OCR Scan     		PDF BC327 BC328 O-226AA) BC337, BC338, BC337 BC338 C338 BC327-25

    BC327

    Abstract: BC327-16 BC327-25 BC327A BC328 BC328-16 BC337 BC337A BC338 bC328 philips
    Text: ; BC328 BC327A BC327-16 ) BC328-16 J BC327-25 BC328- 25 BC327-40 BC328-40 . Transition frequency at f = , 25 V Collector current (peak value) -'cm max. 1000 mA Total power dissipation up to Tamb = 25 °C , dissipation at T^b = 25 °C up to Tamb = 25 °C Storage temperature Junction temperature thermal resistance , -vces max. 50 60 30 v -vce0 max. 45 60 25 v -vEB0 max. 5 5 5 v -'c max. 500 mA -'cm max. 1000 mA , planar epitaxial transistors _ N AMER PHILIPS/DISCRETE CHARACTERISTICS Tj = 25 °C unless otherwise


    OCR Scan     		PDF GG27S24 BC327 BC327A BC328 BC327, BC327A, BC328 BC337, BC337A BC338 BC327 BC327-16 BC327-25 BC327A BC328-16 BC337 bC328 philips

    bc327

    Abstract: bc328 BC327 hfe
    Text: Power dissipation MAXIMUM RATINGS (TA= 25 unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg , -50 -30 -45 - 25 -5 -800 625 150 -55-150 Units V V V mA mW Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS (Tamb= 25 unless otherwise specified) Parameter Collector-base breakdown voltage , , VCEO VEBO IE= -10uA, IC=0 IB=0 -45 - 25 -5 V V Test conditions MIN -50 -30 TYP MAX UNIT V IC= -100uA, IE , =-10V,IE=0 f=1MHZ fT Cob CLASSIFICATION OF hFE Rank Range 16 100-250 25 160-400 40 250-630 BC327


    Original     		PDF BC327/328 BC327 BC328 BC327 hfe

    2003 - BC327-25

    Abstract: BC327-40 BC32725 BC327-25-AP BC327-40-AP BC337-25 BC337-40
    Text: BC327-25 BC327-40 ® SMALL SIGNAL PNP TRANSISTORS PRELIMINARY DATA Ordering Code Marking Package / Shipment BC327-25 BC327-25 TO-92 / Bulk BC327-25-AP BC327-25 TO-92 / Ammopack , February 2003 -1 A 625 mW -65 to 150 o C 150 o C 1/5 BC327-25 / BC327 , = -1 V -1.2 V h FE DC Current Gain I C = -100 mA for BC327-25 for BC327-40 V CE , 250 f = 1 MHz 400 600 80 MHz 10 pF BC327-25 / BC327-40 TO-92 MECHANICAL DATA


    Original     		PDF BC327-25 BC327-40 BC327-25 BC327-25-AP BC327-40 BC327-40-AP BC32725 BC327-25-AP BC327-40-AP BC337-25 BC337-40

    2004 - BC327 NATIONAL SEMICONDUCTOR

    Abstract: *327-25 bc327 bc338 complementary bc3271 BC327 vishay BC328-25
    Text: Ammopack 20 k/box Parts Table Part BC327-16 BC327-25 BC327-40 BC328-16 BC328- 25 BC328-40 Type , , typ. 200 @ 300 mA hFE, typ. 320 @ 300 mA Ordering code BC327-16-BULK or BC327-16-TAP BC327-25-BULK or BC327-25-TAP BC327-40-BULK or BC327-40-TAP BC328-16-BULK or BC328-16-TAP BC328- 25 -BULK or BC328- 25 , -16 BC327-25 BC327-40 BC328-16 BC328- 25 BC328-40 BC327 BC328 BC327 BC328 Symbol hFE hFE hFE hFE hFE hFE - , , -16, - 25 , and -40, according to their DC current gain. As complementary types, the NPN transistors


    Original     		PDF BC327 BC328 BC337 BC338 BC327-16 BC327-25 BC327-40 BC328-16 BC328-25 BC328-40 BC327 NATIONAL SEMICONDUCTOR *327-25 bc338 complementary bc3271 BC327 vishay

    BC327

    Abstract: BC328-16 bc328-25
    Text: current BC328 Emitter cut-off current BC327/BC328 BC327-16/BC328-16 DC current gain BC327-25 /BC328- 25 hFE , (P N P ) FEATURES Power dissipation Pcm: 0.625W (Tamb= 25 °C) Collector current IcM: -0.8 , temperature range Tj.Tsig: -55°C to + 150"C ELECTRICAL CHARACTERISTICS (Tamb= 25 °C u n less o th erw , -50 m ax 'ijw rr V V V V V lc - -100u A, Ie- 0 -30 -45 VcEO lc= -10 mA, Ib=0 - 25 V ebo Ie= -10 v A, lc=0 V cb= -45 V, le=0 -5 IcBO V ce= - 25 V, Ie=0 -0.1 U A


    OCR Scan     		PDF BC337 BC338 BC327 BC328 BC328-16 bc328-25

    2006 - BC327 pin out

    Abstract: bc 7-25 pnp bc327 pin out diagram bc327 application note bc 7-40 pnp BC327 PNP transistor download datasheet bc 7-25 bc 7-40 bc327 BC327-025G
    Text: BC327, BC327-16, BC327-25 , BC327-40 Amplifier Transistors PNP Silicon http://onsemi.com , Publication Order Number: BC327/D BC327, BC327-16, BC327-25 , BC327-40 ELECTRICAL CHARACTERISTICS (TA = , CHARACTERISTICS DC Current Gain (IC = -100 mA, VCE = -1.0 V) hFE BC327 BC327-16 BC327-25 BC327 , ://onsemi.com 2 5.0 10 20 50 100 BC327, BC327-16, BC327-25 , BC327-40 -1000 IC, COLLECTOR , (VOLTS) Figure 7. Capacitances http://onsemi.com 3 -100 BC327, BC327-16, BC327-25 , BC327


    Original     		PDF BC327, BC327-16, BC327-25, BC327-40 BC327/D BC327 pin out bc 7-25 pnp bc327 pin out diagram bc327 application note bc 7-40 pnp BC327 PNP transistor download datasheet bc 7-25 bc 7-40 bc327 BC327-025G

    I3C327

    Abstract: BC327 BC328 cbc327 103 ma BC327/BC328 transistor bc 102 BC337 BC338 BC 160
    Text: subdivided into three groups -16, - 25 and -40, according to their DC current gain. As complementary types the , V BC328 -Vceo 25 V Emitter Base Voltage -Vebo 5 V Collector Current -lc 800 mA Peak Collector Current —IcM 1 A Base Current -IB 100 mA Power Dissipation at Tamb = 25 °C Ptot 6251) mW Junction , at ambient temperature at a distance of 2 mm from case max.Q5* % 25 Plastic Package = JEDEC TO , BC327, BC328 Characteristics at Tamb = 25 °C Symbol Min. Typ. Max. Unit DC Current Gain at -VCE = 1


    OCR Scan     		PDF BC327, BC328 BC337 BC338 BC327 BC327 BC328 I3C327 cbc327 103 ma BC327/BC328 transistor bc 102 BC 160

    TRANSISTOR BC327-40

    Abstract: bc327 TRANSISTOR
    Text: ) PARAMETER SYMBOL RATING UNIT -50 -30 V V -45 - 25 -5 -800 625 150 -55 ~ +150 V , =0 Collector-emitter saturation voltage UTC MIN TYP MAX UNIT -45 - 25 BVCES BVEBO ICES hFE1 , 100 12 CLASSIFICATION OF hFE RANK hFE1 hFE2 UTC 16 100-250 60~ 25 160-400 100


    Original     		PDF BC327/328 BC337/338 BC327 BC328 QW-R201-038 TRANSISTOR BC327-40 bc327 TRANSISTOR

    2004 - BC327

    Abstract: BC327 PNP transistor download datasheet BC327 transistor utc BC328 328 transistor BC327 pnp transistor datasheet PNP BC327 transistor bc327 BC328 OF TRANSISTOR BC337
    Text: -92 1: COLLECTOR 2: BASE 3: EMITTER ABSOLUTE MAXIMUM RATINGS (Ta= 25 °C, unless otherwise specified , Junction Temperature Storage Temperature V V -45 - 25 -5 -800 625 150 -55 ~ +150 V V V mA mW °C °C VCES VCEO VEBO Ic Pc Tj TSTG ELECTRICAL CHARACTERISTICS (Ta= 25 , =0 Collector-emitter saturation voltage UTC MIN TYP MAX UNIT -45 - 25 BVCES BVEBO ICES hFE1 , 12 CLASSIFICATION OF hFE RANK hFE1 hFE2 UTC 16 100-250 60~ 25 160-400 100~ 40


    Original     		PDF BC327/328 BC337/338 BC327 BC328 QW-R201-038 BC327 BC327 PNP transistor download datasheet BC327 transistor utc BC328 328 transistor BC327 pnp transistor datasheet PNP BC327 transistor bc327 BC328 OF TRANSISTOR BC337

    2005 - BC327 W 75

    Abstract: BC327 BC338 bc337 m pin configuration Bc337 pin configuration Bc327 BC328 BC327 pin out
    Text: IBM PD BC327A/337A 60 60 5 800 1000 1000 100 200 625 BC328/338 25 30 UNITS V V , Voltage MAX SYMBOL VCEO TEST CONDITION IC=1mA, IB=0 MIN 45 60 25 V V V VCES , -10 Group-16 Group- 25 Group-40 IC=500mA, VCE=1V DESCRIPTION DC Current Gain SYMBOL *hFE 63


    Original     		PDF BC327/A BC328 BC337/A BC338 C-120 338Rev 201205E BC327 W 75 BC327 bc337 m pin configuration Bc337 pin configuration Bc327 BC327 pin out

    BC327

    Abstract: BC328 transistor BC328
    Text: www.harom.cn BC327/ BC328 TRANSISTOR (PNP) FEATURES Power dissipation TO-92 MAXIMUM RATINGS (TA= 25 , Emitter-Base Voltage -50 -30 -45 - 25 -5 IC Collector Current -Continuous -800 mA PC , Temperature -55-150 V 3. EMITTER 1 2 3 V V ELECTRICAL CHARACTERISTICS (Tamb= 25 unless , -45 - 25 VCBO VEBO IE= -10uA, IC=0 BC327 BC328 ICBO VCB= -45 V , IE=0 VCB= -25V , 12 pF CLASSIFICATION OF hFE Rank Range 16 25 40 100-250 160-400 250-630


    Original     		PDF BC327/ BC328 BC327 -100mA -300mA -500mA, -50mA BC327 BC328 transistor BC328

    BC327 pin out

    Abstract: CBC327 BC327 BC328 BC327 motorola
    Text: €” 630 BC327-16/BC328-16 100 — 250 BC327-25 /BC328- 25 160 — 400 (IC = -300 mA, VCE = -1 0 V , -45 - 25 Vdc Collector-Base Voltage vcbo -50 -30 Vdc Emitter-Base Voltage Vebo -5.0 Vdc Collector , and Storage Junction Temperature Range TJ, Tstg -55 to+150 °C BC327,-16,- 25 BC328,-16,- 25 CASE 29-04 , Collector-Emitter Breakdown Voltage (lc = -10mA, lB = 0) BC327 BC328 V(BR)CEO -45 - 25 — — Vdc Collector-Emitter , , VBE = 0) BC327 (VCE = - 25 V, VBE = 0) BC328 Ices — — -100 -100 nAdc Emitter Cutoff Current (VEB =


    OCR Scan     		PDF BC327/D BC327 BC328 O-226AA) BC327 pin out CBC327 BC327 motorola

    2005 - equivalent for BC327

    Abstract: BC327 BC328 BC338 bc337 m 337a
    Text: IBM PD BC327A/337A 60 60 5 800 1000 1000 100 200 625 BC328/338 25 30 UNITS V V , Voltage MAX SYMBOL VCEO TEST CONDITION IC=1mA, IB=0 MIN 45 60 25 V V V VCES , -10 Group-16 Group- 25 Group-40 IC=500mA, VCE=1V DESCRIPTION DC Current Gain SYMBOL *hFE 63


    Original     		PDF BC327/A BC328 BC337/A BC338 338Rev 290606D C-120 equivalent for BC327 BC327 bc337 m 337a
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