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    1N5817 Price and Stock

    Vishay Semiconductors 1N5817-E3-73

    DIODE SCHOTTKY 20V 1A DO204AL
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    DigiKey 1N5817-E3-73 Ammo Pack 33,000 3,000
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    Micro Commercial Components 1N5817-TP

    DIODE SCHOTTKY 20V 1A DO41
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    DigiKey 1N5817-TP Cut Tape 25,023 1
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    1N5817-TP Reel 20,000 5,000
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    STMicroelectronics 1N5817

    DIODE SCHOTTKY 20V 1A DO41
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    DigiKey 1N5817 Cut Tape 12,985 1
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    Avnet Americas 1N5817 Reel 4,000 15 Weeks 2,000
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    1N5817 Ammo Pack 46 Weeks, 3 Days 1
    • 1 $0.36
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    Newark 1N5817 Ammo Pack 1,924 1
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    1N5817 Reel 2,000
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    STMicroelectronics 1N5817 50,592 1
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    Bristol Electronics 1N5817 4,925
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    TME 1N5817 2,388 1
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    Avnet Silica 1N5817 30,000 16 Weeks 2,000
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    EBV Elektronik 1N5817 16 Weeks 2,000
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    onsemi 1N5817RLG

    DIODE SCHOTTKY 20V 1A AXIAL
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    DigiKey 1N5817RLG Reel 8,700 5,000
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    RS 1N5817RLG Bulk 5
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    Rochester Electronics 1N5817RLG 25,566 1
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    TME 1N5817RLG 4,990 1
    • 1 $0.421
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    Richardson RFPD 1N5817RLG 10,000
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    Avnet Asia 1N5817RLG 10,000 10 Weeks 10,000
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    Avnet Silica 1N5817RLG 5,000 11 Weeks 5,000
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    Chip1Stop 1N5817RLG Cut Tape 3,386
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    EBV Elektronik 1N5817RLG 12 Weeks 5,000
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    Master Electronics 1N5817RLG 5,000
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    New Advantage Corporation 1N5817RLG 5,000 1
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    Vishay Semiconductors 1N5817-E3-53

    DIODE SCHOTTKY 20V 1A DO204AL
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    DigiKey 1N5817-E3-53 Cut Tape 7,801 1
    • 1 $0.82
    • 10 $0.508
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    • 1000 $0.22622
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    1N5817-E3-53 Ammo Pack 6,000 3,000
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    1N5817 Datasheets (141)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1N5817 Bytes 1.0 AMP SCHOTTKY BARRIER RECTIFIERS Original PDF
    1N5817 Comchip Technology 1N5817 Original PDF
    1N5817 Daesan Electronics CURRENT 1.0 Ampere VOLTAGE 20 to 40 Volts Original PDF
    1N5817 DC Components TECHNICAL SPECIFICATIONS OF SCHOTTKY BARRIER RECTIFIER Original PDF
    1N5817 Diodes Incorporated 1.0A SCHOTTKY BARRIER RECTIFIER Original PDF
    1N5817 Diodes Incorporated 1N5817 DIODE SCHOTTKY 20V 1A DO-41 Original PDF
    1N5817 Diodes Incorporated Short Form Selection Guide Original PDF
    1N5817 Diotec Diode, 1A, 20V, Schottky Barrier Rectifier Original PDF
    1N5817 Diotec Si-Schottky-Rectifiers Original PDF
    1N5817 EIC Semiconductor SCHOTTKY BARRIER RECTIFIER DIODES Original PDF
    1N5817 Fagor 20 V, 1A schottky barrier rectifier Original PDF
    1N5817 Fairchild Semiconductor Schottky Rectifiers Original PDF
    1N5817 Fairchild Semiconductor 1.0 Ampere Schottky Barrier Rectifiers Original PDF
    1N5817 Fairchild Semiconductor Schottky Barrier Rectifier Original PDF
    1N5817 FCI Diode, 1A, 20V, Schottky Barrier Diode Original PDF
    1N5817 Formosa 1.0 AMP SCHOTTKY BARRIER RECTIFIERS Original PDF
    1N5817 Galaxy Semi-Conductor Holdings SCHOTTKY BARRIER RECTIFIER Original PDF
    1N5817 General Semiconductor SCHOTTKY BARRIER RECTIFIER Original PDF
    1N5817 Good-Ark SCHOTTKY BARRIER RECTIFIER Original PDF
    1N5817 HY Electronic SCHOTTKY BARRIER RECTIFIERS Original PDF
    ...

    1N5817 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N5817 - 1N5819 CREAT BY ART Pb 1.0AMP. Schottky Barrier Rectifiers DO-41 RoHS COMPLIANCE Features — Low power loss, high efficiency — High current capability, Low VF — High reliability — High surge current capability — Exitaxial construction — Guard-ring for transient protection


    Original
    1N5817 1N5819 DO-41 DO-41 MIL-STD-202, 1N5818 300us PDF

    1n5819 die

    Abstract: 1N5817 1N5817-1N5819 1N5818 1N5819
    Text: 1N5817 - 1N5819 1.0A SCHOTTKY BARRIER RECTIFIER Features • · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop


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    1N5817 1N5819 DO-41 MIL-STD-202, 1N5818 DS23001 1N5817-1N5819 1n5819 die 1N5817-1N5819 1N5818 1N5819 PDF

    datasheets diode 1n5818

    Abstract: 1N5817 1N5818 1N5819
    Text: LITE-ON SEMICONDUCTOR 1N5817 thru 1N5819 REVERSE VOLTAGE - 20 to 40 Volts FORWARD CURRENT - 1.0 Ampere SCHOTTKY BARRIER RECTIFIERS DO-41 FEATURES Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop High current capability


    Original
    1N5817 1N5819 DO-41 DO-41 1N5817 1N5818 300us 01-Dec-2000, datasheets diode 1n5818 1N5818 1N5819 PDF

    1n5819 melf

    Abstract: melf Schottky glass
    Text: 1N5817 thru 1N5819 Schottky Barrier Rectifiers DO-204AL DO-41 Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Low power loss, high efficiency • For use in low voltage high frequency inverters, free wheeling, and polarity protection applications


    Original
    1N5817 1N5819 DO-204AL DO-41) DO-204 MIL-STD-750, 50mVp-p 1n5819 melf melf Schottky glass PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N5817 thru 1N5819 WEITRON http://www.weitron.com.tw 1N5817 Thru 1N5819 Maximum Rating Characteristic Symbol Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR RMS Reverse Voltage VR RMS 1N5817 1N5818 1N5819 UNIT


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    1N5817 1N5819 1N5817 1N5818 PDF

    datasheets diode 1n5819

    Abstract: 1N5817 1N5818 1N5819 DO-204AL
    Text: 1N5817 THRU 1N5819 SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 40 Volts Forward Current - 1.0 Ampere DO-204AL FEATURES 1.0 25.4 MIN. * The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 * Metal silicon junction, majority carrier conduction


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    1N5817 1N5819 DO-204AL 260oC 1N5817 1N5818 datasheets diode 1n5819 1N5818 1N5819 DO-204AL PDF

    datasheets diode 1n5818

    Abstract: 1N5817 1N5817RL 1N5818 1N5818RL 1N5819 1N5819RL 1N5817-19
    Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation


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    1N5817, 1N5818, 1N5819 1N5817 1N5819 r14525 1N5817/D datasheets diode 1n5818 1N5817RL 1N5818 1N5818RL 1N5819RL 1N5817-19 PDF

    1N5817

    Abstract: 1N5818 1N5819 DO-204AL
    Text: 1N5817 THRU 1N5819 SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 40 Volts Forward Current - 1.0 Ampere FEATURES DO-204AL 1.0 25.4 MIN. 0.107 (2.7) 0.080 (2.0) DIA. 0.205 (5.2) 0.160 (4.1) ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0


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    1N5817 1N5819 DO-204AL 50mVp-p 1N5818 1N5819 DO-204AL PDF

    1N5817

    Abstract: 1N5818 1N5819
    Text: 1N5817 - 1N5819 Schottky Barrier Rectifier Features • 1.0 ampere operation at TA = 90°C with no thermal runaway. • For use in low voltage, high frequency inverters free wheeling, and polarity protection applications. DO-41 plastic case COLOR BAND DENOTES CATHODE


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    1N5817 1N5819 DO-41 1N5817 1N5818 1N5818 1N5819 PDF

    1N5819

    Abstract: 1N5817 1N5818
    Text: LITE-ON SEMICONDUCTOR 1N5817 thru 1N5819 REVERSE VOLTAGE - 20 to 40 Volts FORWARD CURRENT - 1.0 Ampere SCHOTTKY BARRIER RECTIFIERS DO-41 FEATURES Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop High current capability


    Original
    1N5817 1N5819 DO-41 DO-41 1N5819 1N5818 PDF

    1n5819 trr

    Abstract: Khandelwal Herrmann Electronics 1N5817 1N5819 202E SR120 SR180 1n5817 trr
    Text: Bulletin 55 - 301 KHEL Khandelwal Herrmann Electronics Limited Voltage : 20 - 80 Volts Current : 1 Ampere TECHNICAL SPIFICATIONS OF 1 AMPERE SCHOTTKY BARRIER DIODES TYPE 1N5817 TO 1N5819 AND SR120 TO SR180 FEATURES • Low Cost 25.4 MIN • Low Leakage • Low Forward Voltage Drop


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    1N5817 1N5819 SR120 SR180 DO-41 UL94V-0 Plot-101, 1n5819 trr Khandelwal Herrmann Electronics 202E SR180 1n5817 trr PDF

    1N5817

    Abstract: 1N5818 1N5819 1n* schottky
    Text: 1N5817 THRU 1N5819 SCHOTTKY BARRIER RECTIFIERS Features • Metal silicon junction, majority carrier conduction • Guarding for overvoltage protection • Low power loss, high efficiency • High current capability • low forward voltage drop • High surge capability


    Original
    1N5817 1N5819 DO-41 1N5817 1N5818 50mVp-p 1N5818 1N5819 1n* schottky PDF

    1n5819s

    Abstract: 1N5817S 1N5818S A-405
    Text: 1N5817S THRU 1N5819S SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 40Volts Forward Current - 1.0 Ampere A-405 FEATURES Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction,majority carrier conduction Guardring for overvoltage protection


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    1N5817S 1N5819S 40Volts 50mVp-p 1n5819s 1N5818S A-405 PDF

    I1N5817

    Abstract: No abstract text available
    Text: DATA SHEET 1N5817~1N5819 SCHOTTKY BARRIER RECTIFIERS VOLTAGE 20 to 40 Volts CURRENT 1.0 Amperes DO-41 Unit: inch mm FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound.


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    1N5817 1N5819 DO-41 MIL-S-19500/228 DO-41 MIL-STD-202G I1N5817 PDF

    datasheets diode 1n5818

    Abstract: No abstract text available
    Text: MCC 1N5817 THRU 1N5819   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# Features • • • • • 1 Amp Schottky Barrier Rectifier 20 to 40 Volts Schottky Barrier Rectifier Guard Ring Protection


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    1N5817 1N5819 DO-41 1N5818 datasheets diode 1n5818 PDF

    Diode type SMD marking SJ 09

    Abstract: No abstract text available
    Text: Diodes SMD Type Schottky Barrier Diodes 1N5817W-1N5819W SOD-123 Unit: mm 2.7 +0.05 1.1-0.05 +0.1 0.55-0.1 +0.1 -0.1 +0.1 1.6-0.1 Features For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. +0.1 3.7-0.1 0.1max


    Original
    1N5817W-1N5819W OD-123 1N5817W 1N5818W 1N5819W Diode type SMD marking SJ 09 PDF

    1N5810 diode

    Abstract: No abstract text available
    Text: 1N5817 - 1N5819 1.0 Amp. Schottky Barrier Rectifier Current 1.0 A Voltage 20 V to 40 V DO-204AL DO-41 FEATURES • Low power losses, high efficiency • High surge current capability • High frequency operation • Guarding for overvoltage protection • Low forward voltage drop


    Original
    1N5817 1N5819 DO-204AL DO-41) AEC-Q101 2011/65/EU 2002/96/EC MIL-STD-750 1N5810 diode PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 1N5817 THRU 1N5819   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features Halogen free available upon request by adding suffix "-HF" Guard Ring Protection


    Original
    1N5817 1N5819 DO-41 PDF

    specifications on 1n5818

    Abstract: No abstract text available
    Text: 1N5817 thru 1N5819 Vishay General Semiconductor Schottky Barrier Rectifiers FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High frequency operation DO-204AL DO-41


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    1N5817 1N5819 DO-204AL DO-41) 2002/95/EC 2002/96/EC J-STD-002 JESD22-B102 specifications on 1n5818 PDF

    Untitled

    Abstract: No abstract text available
    Text: Surface Mount Schottky Barrier Rectifier Diode NSD Series FEATURES • • • • • • VOLTAGE: 20 TO 60 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N5817 THRU 1N5819 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS FAST RESPONSE AND LOW FORWARD VOLTAGE


    Original
    1N5817 1N5819 250OC/10 SMA/DO-214AC EIA-RS-481) RS-481-A PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 1N5817 THRU 1N5819   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • 1 Amp Schottky Barrier Rectifier 20 to 40 Volts Guard Ring Protection


    Original
    1N5817 1N5819 DO-41 1N5818 PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 1N5817 THRU 1N5819   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • 1 Amp Schottky Barrier Rectifier 20 to 40 Volts Guard Ring Protection


    Original
    1N5817 1N5819 DO-41 1N5818 PDF

    1n4001 melf

    Abstract: BY253 BY254 1N5819M
    Text: Schottky Rectifiers, Rectifiers Silicon Schottky Barrier Rectifiers 1 A Average Rectified Current a t T L = 90 °C Type 1N5817 1N5818 1N5819 1N5817 to 1N5819 DO-41 Glass Package 1N5817M to 1N5819M (MELF Glass Package) 1N5817M 1N5818M 1N5819M Silicon Rectifiers 1A


    OCR Scan
    1N5817 1N5819 DO-41 1N5817M 1N5819M 1N5818 1N5819 1N5818M 1n4001 melf BY253 BY254 1N5819M PDF

    1N5819a

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by 1N5817/D SEMICONDUCTOR TECHNICAL DATA A x ia l Lead R ectifiers 1N5817 1N5818 1N5819 . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. S ta te -o f-th e -a rt geometry features chrome barrier metal,


    OCR Scan
    1N5817/D 1N5817 1N5818 1N5819 1N5819are 1N5819a PDF