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    1N5819 Search Results

    1N5819 Datasheets (180)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    1N5819
    Bytesonic Electronics DIODE RECTIFIER BRIDGE SINGLE 40V 1A 2DO-41 Original PDF 154.04KB 2
    1N5819
    Comchip Technology 1.0 A schottky barrier rectifier. Max repetitive peak reverse voltage 40 V. Original PDF 28.85KB 2
    1N5819
    Compensated Devices 1 AMP SCHOTTKY BARRIER RECTIFIERS Original PDF 37KB 2
    1N5819
    Daesan Electronics CURRENT 1.0 Ampere VOLTAGE 20 to 40 Volts Original PDF 295.78KB 2
    1N5819
    DC Components TECHNICAL SPECIFICATIONS OF SCHOTTKY BARRIER RECTIFIER Original PDF 394.07KB 2
    1N5819
    Diodes Incorporated 1.0A SCHOTTKY BARRIER RECTIFIER Original PDF 43.06KB 2
    1N5819
    Diodes Incorporated DIODE, 40V, 1A, 1N5819 Original PDF 32.86KB 3
    1N5819
    Diodes Incorporated Short Form Selection Guide Original PDF 3.18MB 129
    1N5819
    Diotec Diode, 1A, 40V, Schottky Barrier Rectifier Original PDF 59.64KB 2
    1N5819
    Diotec Si-Schottky-Rectifiers Original PDF 38.49KB 2
    1N5819
    EIC Semiconductor SCHOTTKY BARRIER RECTIFIER DIODES Original PDF 16.28KB 2
    1N5819
    Fagor 40 V, 1A schottky barrier rectifier Original PDF 38.36KB 2
    1N5819
    Fairchild Semiconductor Schottky Rectifiers Original PDF 39.2KB 3
    1N5819
    Fairchild Semiconductor Schottky Barrier Rectifier Original PDF 113.86KB 3
    1N5819
    Fairchild Semiconductor 1.0 Ampere Schottky Barrier Rectifiers Original PDF 35.69KB 2
    1N5819
    FCI Diode, 1A, 40V, Schottky Barrier Diode Original PDF 106.06KB 1
    1N5819
    Formosa 1.0 AMP SCHOTTKY BARRIER RECTIFIERS Original PDF 33.23KB 2
    1N5819
    Fronter Electronics DIODE SCHOTTKY DIODE 40V 1A 2DO-41 Original PDF 70.47KB 2
    1N5819
    Galaxy Semi-Conductor Holdings SCHOTTKY BARRIER RECTIFIER Original PDF 44.01KB 2
    1N5819
    General Semiconductor SCHOTTKY BARRIER RECTIFIER Original PDF 44.46KB 2
    ...
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    1N5819 Price and Stock

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    onsemi 1N5819RLG

    The 1N5819RLG is a 1.0 A 40 V Schottky barrier rectifier designed for low-voltage high-frequency applications.
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    1N5819RLG Cut Strips 3,201 1
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    Newark () 1N5819RLG Cut Tape 1,511 1
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    1N5819RLG Tape & Reel 1,511 10
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    TME 1N5819RLG 3,714 1
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    NexGen Digital 1N5819RLG 425
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    Chip 1 Exchange 1N5819RLG 11,672
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    EBV Elektronik 1N5819RLG 26 Weeks 5,000
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    Win Source Electronics 1N5819RLG 20,000
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    Diotec Semiconductor AG 1N5819

    Schottky - DO-15 - 40V - 1A - 150°C
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    Master Electronics 1N5819 7,000
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    Verical () 1N5819 18,382 202
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    1N5819 4,753 820
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    1N5819 4,000 4,000
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    Arrow Electronics 1N5819 18,512 10 Weeks 1
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    Onlinecomponents.com 1N5819 7,000
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    TME 1N5819 4,753 1
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    Rutronik 1N5819 Ammo Pack 8,000 4,000
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    onsemi 1N5819G

    The 1N5819G is a 1.0 Ampere 40 Volt axial-lead Schottky barrier rectifier designed for high-efficiency low-voltage applications.
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    Master Electronics 1N5819G 3,000
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    Verical () 1N5819G 8,961 87
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    1N5819G 3,000 1,000
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    Avnet Americas 1N5819G Bulk 115,940 27 Weeks 1
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    Newark 1N5819G Bulk 6,406 1
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    RS 1N5819G Bulk 90 Weeks 10
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    TME 1N5819G 1
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    ComSIT USA 1N5819G 6,000
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    Richardson RFPD 1N5819G 6,000
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    EBV Elektronik 1N5819G 7,000 23 Weeks 1,000
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    Maritex 1N5819G 446 1
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    Microchip Technology Inc JAN1N5819UR-1

    Diode - 45V - 1A - 490 mV @ 1 A Forward (Vf) (Max) @ If - Fast Recovery =< 500ns > 200mA (Io) - DO-213AB (MELF LL41) Package.
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    Microchip Technology Inc JANS1N5819UR-1

    Rectifier Diode Schottky 1 Element 1A 45V V(RRM) Silicon DO-213AB
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    Master Electronics JANS1N5819UR-1 49
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    1N5819 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: 1N5817 - 1N5819 CREAT BY ART Pb 1.0AMP. Schottky Barrier Rectifiers DO-41 RoHS COMPLIANCE Features — Low power loss, high efficiency — High current capability, Low VF — High reliability — High surge current capability — Exitaxial construction — Guard-ring for transient protection


    Original
    1n58171n5819do-41mil-std-202+21n5818300us PDF

    1n5819 die

    Abstract: 1N5817 1N5817-1N5819 1N5818 1N5819
    Contextual Info: 1N5817 - 1N5819 1.0A SCHOTTKY BARRIER RECTIFIER Features • · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop


    Original
    1n58171n5819do-41mil-std-202+41n5818ds230011n5817-1n58191n5819 die PDF

    datasheets diode 1n5818

    Abstract: 1N5817 1N5818 1N5819
    Contextual Info: LITE-ON SEMICONDUCTOR 1N5817 thru 1N5819 REVERSE VOLTAGE - 20 to 40 Volts FORWARD CURRENT - 1.0 Ampere SCHOTTKY BARRIER RECTIFIERS DO-41 FEATURES Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop High current capability


    Original
    1n58171n5819do-411n5818+3300us01-dec-2000datasheets diode 1n5818 PDF

    1N5819WL

    Abstract: J-STD-020D
    Contextual Info: 1N5819WL SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER REVERSE VOLTAGE – 40 Volts FORWARD CURRENT – 1.0 Ampere FEATURES SOD-123 • Low Forward Voltage Drop • High Surge Capability and High Current Capability • For Surface Mounted Applications • High Conductance


    Original
    1n5819wlod-123j-std-020d2002/95/ec+1180/w PDF

    1n5819 melf

    Abstract: melf Schottky glass
    Contextual Info: 1N5817 thru 1N5819 Schottky Barrier Rectifiers DO-204AL DO-41 Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Low power loss, high efficiency • For use in low voltage high frequency inverters, free wheeling, and polarity protection applications


    Original
    1n58171n5819do-204aldo-41+5do-204mil-std-75050mvp-p1n5819 melfmelf schottky glass PDF

    Contextual Info: Bulletin PD-20590 rev. B 11/04 1N5818 1N5819 SCHOTTKY RECTIFIER 1.0 Amp Major Ratings and Characteristics Description/Features The 1N5818/ 1N5819 axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies,


    Original
    pd-205901n58181n58191n5818/+108-mar-07 PDF

    Contextual Info: 1N5817 thru 1N5819 WEITRON http://www.weitron.com.tw 1N5817 Thru 1N5819 Maximum Rating Characteristic Symbol Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR RMS Reverse Voltage VR RMS 1N5817 1N5818 1N5819 UNIT


    Original
    1n58171n58191n5818 PDF

    1N5818

    Abstract: datasheets diode 1n5818 1N5819 1N581X DO-204AL
    Contextual Info: Bulletin PD-20590 rev. A 05/02 1N5818 1N5819 SCHOTTKY RECTIFIER 1.0 Amp Description/Features Major Ratings and Characteristics Characteristics 1N5818 1N5819 Units IF AV Rectangular 1.0 A 30/40 V Low profile, axial leaded outline IFSM @ tp = 5 µs sine 225


    Original
    pd-205901n58181n58191n5818/+3datasheets diode 1n58181n581xdo-204al PDF

    datasheets diode 1n5819

    Abstract: 1N5818 1N5818-1N5819 1N581x 1N5819 DO-204AL
    Contextual Info: Bulletin PD-20590 04/01 1N5818 1N5819 SCHOTTKY RECTIFIER 1.0 Amp Description/Features Major Ratings and Characteristics Characteristics 1N5818 1N5819 Units IF AV Rectangular 1.0 A 30/40 V Low profile, axial leaded outline waveform VRRM The 1N5818/ 1N5819 axial leaded Schottky rectifier has been


    Original
    pd-205901n58181n58191n5818/+41n581xdatasheets diode 1n58191n5818-1n5819do-204al PDF

    datasheets diode 1n5819

    Abstract: 1N5817 1N5818 1N5819 DO-204AL
    Contextual Info: 1N5817 THRU 1N5819 SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 40 Volts Forward Current - 1.0 Ampere DO-204AL FEATURES 1.0 25.4 MIN. * The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 * Metal silicon junction, majority carrier conduction


    Original
    1n58171n5819do-204al260oc+21n5818datasheets diode 1n5819 PDF

    datasheets diode 1n5818

    Abstract: 1N5817 1N5817RL 1N5818 1N5818RL 1N5819 1N5819RL 1N5817-19
    Contextual Info: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original
    1n58171n58181n5819r14525+61n5817/ddatasheets diode 1n58181n5817rl1n5818rl1n5819rl1n5817-19 PDF

    1N5817

    Abstract: 1N5818 1N5819 DO-204AL
    Contextual Info: 1N5817 THRU 1N5819 SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 40 Volts Forward Current - 1.0 Ampere FEATURES DO-204AL 1.0 25.4 MIN. 0.107 (2.7) 0.080 (2.0) DIA. 0.205 (5.2) 0.160 (4.1) ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0


    Original
    1n58171n5819do-204al50mvp-p+11n5818 PDF

    1N5817

    Abstract: 1N5818 1N5819
    Contextual Info: 1N5817 - 1N5819 Schottky Barrier Rectifier Features • 1.0 ampere operation at TA = 90°C with no thermal runaway. • For use in low voltage, high frequency inverters free wheeling, and polarity protection applications. DO-41 plastic case COLOR BAND DENOTES CATHODE


    Original
    1n58171n5819do-411n5818 PDF

    1N5819

    Abstract: 1N5817 1N5818
    Contextual Info: LITE-ON SEMICONDUCTOR 1N5817 thru 1N5819 REVERSE VOLTAGE - 20 to 40 Volts FORWARD CURRENT - 1.0 Ampere SCHOTTKY BARRIER RECTIFIERS DO-41 FEATURES Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop High current capability


    Original
    1n58171n5819do-411n5818 PDF

    1n5819 trr

    Abstract: Khandelwal Herrmann Electronics 1N5817 1N5819 202E SR120 SR180 1n5817 trr
    Contextual Info: Bulletin 55 - 301 KHEL Khandelwal Herrmann Electronics Limited Voltage : 20 - 80 Volts Current : 1 Ampere TECHNICAL SPIFICATIONS OF 1 AMPERE SCHOTTKY BARRIER DIODES TYPE 1N5817 TO 1N5819 AND SR120 TO SR180 FEATURES • Low Cost 25.4 MIN • Low Leakage • Low Forward Voltage Drop


    Original
    1n58171n5819sr120sr180+7do-41ul94v-0plot-1011n5819 trrkhandelwal herrmann electronics202e1n5817 trr PDF

    1N5817

    Abstract: 1N5818 1N5819 1n* schottky
    Contextual Info: 1N5817 THRU 1N5819 SCHOTTKY BARRIER RECTIFIERS Features • Metal silicon junction, majority carrier conduction • Guarding for overvoltage protection • Low power loss, high efficiency • High current capability • low forward voltage drop • High surge capability


    Original
    1n58171n5819do-411n5818+250mvp-p1n* schottky PDF

    1n5819s

    Abstract: 1N5817S 1N5818S A-405
    Contextual Info: 1N5817S THRU 1N5819S SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 40Volts Forward Current - 1.0 Ampere A-405 FEATURES Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction,majority carrier conduction Guardring for overvoltage protection


    Original
    1n5817s1n5819s40volts50mvp-p+21n5818sa-405 PDF

    I1N5817

    Contextual Info: DATA SHEET 1N5817~1N5819 SCHOTTKY BARRIER RECTIFIERS VOLTAGE 20 to 40 Volts CURRENT 1.0 Amperes DO-41 Unit: inch mm FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound.


    Original
    1n58171n5819do-41mil-s-19500/228+2mil-std-202gi1n5817 PDF

    1N5817

    Abstract: 1N5818 1N5819
    Contextual Info: 1N5817 THRU 1N5819 SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 40 Volts Forward Current - 1.0 Ampere FEATURES DO-41 Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ● Metal silicon junction,majority carrier conduction


    Original
    1n58171n5819do-4150mvp-p+11n5818 PDF

    datasheets diode 1n5818

    Contextual Info: MCC 1N5817 THRU 1N5819   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# Features • • • • • 1 Amp Schottky Barrier Rectifier 20 to 40 Volts Schottky Barrier Rectifier Guard Ring Protection


    Original
    1n58171n5819do-411n5818+1datasheets diode 1n5818 PDF

    Diode type SMD marking SJ 09

    Contextual Info: Diodes SMD Type Schottky Barrier Diodes 1N5817W-1N5819W SOD-123 Unit: mm 2.7 +0.05 1.1-0.05 +0.1 0.55-0.1 +0.1 -0.1 +0.1 1.6-0.1 Features For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. +0.1 3.7-0.1 0.1max


    Original
    1n5817w-1n5819wod-1231n5817w1n5818w+21n5819wdiode type smd marking sj 09 PDF

    1n4001 melf

    Abstract: BY253 BY254 1N5819M
    Contextual Info: Schottky Rectifiers, Rectifiers Silicon Schottky Barrier Rectifiers 1 A Average Rectified Current a t T L = 90 °C Type 1N5817 1N5818 1N5819 1N5817 to 1N5819 DO-41 Glass Package 1N5817M to 1N5819M (MELF Glass Package) 1N5817M 1N5818M 1N5819M Silicon Rectifiers 1A


    OCR Scan
    1n58171n5819do-411n5817m+61n5819m1n58181n5818m1n4001 melfby253by254 PDF

    1N5810 diode

    Contextual Info: 1N5817 - 1N5819 1.0 Amp. Schottky Barrier Rectifier Current 1.0 A Voltage 20 V to 40 V DO-204AL DO-41 FEATURES • Low power losses, high efficiency • High surge current capability • High frequency operation • Guarding for overvoltage protection • Low forward voltage drop


    Original
    1n58171n5819do-204aldo-41+5aec-q1012011/65/eu2002/96/ecmil-std-7501n5810 diode PDF

    1N5819W

    Abstract: SOD-123 JEDEC marking code sr marking "SR"
    Contextual Info: 1N5819W 1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE Features: PINNING ˙ Schottky Barrier Chip PIN ˙ Guard Ring Die Construction for Transient Protection ˙ Low Power Loss, High Efficiency ˙ High Surge Capability DESCRIPTION 1 Cathode 2 Anode 2 1 SR ˙ High Current Capability and Low Forward Voltage Drop


    Original
    1n5819wod-123mil-std-202width200s+3sod-123 jedecmarking code srmarking "sr PDF