1N5817 Search Results

Contextual Info: 1N5817 - 1N5819 CREAT BY ART Pb 1.0AMP. Schottky Barrier Rectifiers DO-41 RoHS COMPLIANCE Features — Low power loss, high efficiency — High current capability, Low VF — High reliability — High surge current capability — Exitaxial construction — Guard-ring for transient protection

1n5819 die

Abstract: 1N5817 1N5817-1N5819 1N5818 1N5819
Contextual Info: 1N5817 - 1N5819 1.0A SCHOTTKY BARRIER RECTIFIER Features • · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop

datasheets diode 1n5818

Abstract: 1N5817 1N5818 1N5819
Contextual Info: LITE-ON SEMICONDUCTOR 1N5817 thru 1N5819 REVERSE VOLTAGE - 20 to 40 Volts FORWARD CURRENT - 1.0 Ampere SCHOTTKY BARRIER RECTIFIERS DO-41 FEATURES Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop High current capability

1n5819 melf

Abstract: melf Schottky glass
Contextual Info: 1N5817 thru 1N5819 Schottky Barrier Rectifiers DO-204AL DO-41 Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Low power loss, high efficiency • For use in low voltage high frequency inverters, free wheeling, and polarity protection applications

Contextual Info: 1N5817 thru 1N5819 WEITRON http://www.weitron.com.tw 1N5817 Thru 1N5819 Maximum Rating Characteristic Symbol Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR RMS Reverse Voltage VR RMS 1N5817 1N5818 1N5819 UNIT

datasheets diode 1n5819

Abstract: 1N5817 1N5818 1N5819 DO-204AL
Contextual Info: 1N5817 THRU 1N5819 SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 40 Volts Forward Current - 1.0 Ampere DO-204AL FEATURES 1.0 25.4 MIN. * The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 * Metal silicon junction, majority carrier conduction

datasheets diode 1n5818

Abstract: 1N5817 1N5817RL 1N5818 1N5818RL 1N5819 1N5819RL 1N5817-19
Contextual Info: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation

1N5817

Abstract: 1N5818 1N5819 DO-204AL
Contextual Info: 1N5817 THRU 1N5819 SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 40 Volts Forward Current - 1.0 Ampere FEATURES DO-204AL 1.0 25.4 MIN. 0.107 (2.7) 0.080 (2.0) DIA. 0.205 (5.2) 0.160 (4.1) ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0

1N5817

Abstract: 1N5818 1N5819
Contextual Info: 1N5817 - 1N5819 Schottky Barrier Rectifier Features • 1.0 ampere operation at TA = 90°C with no thermal runaway. • For use in low voltage, high frequency inverters free wheeling, and polarity protection applications. DO-41 plastic case COLOR BAND DENOTES CATHODE

1N5819

Abstract: 1N5817 1N5818
Contextual Info: LITE-ON SEMICONDUCTOR 1N5817 thru 1N5819 REVERSE VOLTAGE - 20 to 40 Volts FORWARD CURRENT - 1.0 Ampere SCHOTTKY BARRIER RECTIFIERS DO-41 FEATURES Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop High current capability

1n5819 trr

Abstract: Khandelwal Herrmann Electronics 1N5817 1N5819 202E SR120 SR180 1n5817 trr
Contextual Info: Bulletin 55 - 301 KHEL Khandelwal Herrmann Electronics Limited Voltage : 20 - 80 Volts Current : 1 Ampere TECHNICAL SPIFICATIONS OF 1 AMPERE SCHOTTKY BARRIER DIODES TYPE 1N5817 TO 1N5819 AND SR120 TO SR180 FEATURES • Low Cost 25.4 MIN • Low Leakage • Low Forward Voltage Drop

1N5817

Abstract: 1N5818 1N5819 1n* schottky
Contextual Info: 1N5817 THRU 1N5819 SCHOTTKY BARRIER RECTIFIERS Features • Metal silicon junction, majority carrier conduction • Guarding for overvoltage protection • Low power loss, high efficiency • High current capability • low forward voltage drop • High surge capability

1n5819s

Abstract: 1N5817S 1N5818S A-405
Contextual Info: 1N5817S THRU 1N5819S SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 40Volts Forward Current - 1.0 Ampere A-405 FEATURES Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction,majority carrier conduction Guardring for overvoltage protection

I1N5817

Contextual Info: DATA SHEET 1N5817~1N5819 SCHOTTKY BARRIER RECTIFIERS VOLTAGE 20 to 40 Volts CURRENT 1.0 Amperes DO-41 Unit: inch mm FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound.

datasheets diode 1n5818

Contextual Info: MCC 1N5817 THRU 1N5819
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# Features • • • • • 1 Amp Schottky Barrier Rectifier 20 to 40 Volts Schottky Barrier Rectifier Guard Ring Protection

Diode type SMD marking SJ 09

Contextual Info: Diodes SMD Type Schottky Barrier Diodes 1N5817W-1N5819W SOD-123 Unit: mm 2.7 +0.05 1.1-0.05 +0.1 0.55-0.1 +0.1 -0.1 +0.1 1.6-0.1 Features For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. +0.1 3.7-0.1 0.1max

1n4001 melf

Abstract: BY253 BY254 1N5819M
Contextual Info: Schottky Rectifiers, Rectifiers Silicon Schottky Barrier Rectifiers 1 A Average Rectified Current a t T L = 90 °C Type 1N5817 1N5818 1N5819 1N5817 to 1N5819 DO-41 Glass Package 1N5817M to 1N5819M (MELF Glass Package) 1N5817M 1N5818M 1N5819M Silicon Rectifiers 1A

1N5810 diode

Contextual Info: 1N5817 - 1N5819 1.0 Amp. Schottky Barrier Rectifier Current 1.0 A Voltage 20 V to 40 V DO-204AL DO-41 FEATURES • Low power losses, high efficiency • High surge current capability • High frequency operation • Guarding for overvoltage protection • Low forward voltage drop

Contextual Info: MCC TM Micro Commercial Components 1N5817 THRU 1N5819
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features Halogen free available upon request by adding suffix "-HF" Guard Ring Protection

specifications on 1n5818

Contextual Info: 1N5817 thru 1N5819 Vishay General Semiconductor Schottky Barrier Rectifiers FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High frequency operation DO-204AL DO-41

Contextual Info: Surface Mount Schottky Barrier Rectifier Diode NSD Series FEATURES • • • • • • VOLTAGE: 20 TO 60 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N5817 THRU 1N5819 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS FAST RESPONSE AND LOW FORWARD VOLTAGE

Contextual Info: MCC TM Micro Commercial Components 1N5817 THRU 1N5819
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • 1 Amp Schottky Barrier Rectifier 20 to 40 Volts Guard Ring Protection

Contextual Info: MCC TM Micro Commercial Components 1N5817 THRU 1N5819
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • 1 Amp Schottky Barrier Rectifier 20 to 40 Volts Guard Ring Protection

1N5819a

Contextual Info: MOTOROLA Order this document by 1N5817/D SEMICONDUCTOR TECHNICAL DATA A x ia l Lead R ectifiers 1N5817 1N5818 1N5819 . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. S ta te -o f-th e -a rt geometry features chrome barrier metal,