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1N5819W
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EIC Semiconductor
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SURFACE MOUNT SCHOTTKY BARRIER DIODE |
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119.89KB |
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1N5819W
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Kexin
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Schottky Barrier Rectifier Diodes |
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97.29KB |
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1N5819W
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TY Semiconductor
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Schottky Barrier Rectifier Diodes - SOD-123 |
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154.03KB |
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1N5819WB
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EIC Semiconductor
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Schottky Barrier Diodes |
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39.13KB |
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1N5819WS
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Kexin
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Schottky Barrier Rectifier Diodes |
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97.5KB |
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1N5819WS
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TY Semiconductor
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Schottky Barrier Rectifier Diodes - SOD-323 |
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180.57KB |
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1N5819W
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Shenzhen Heketai Electronics Co Ltd
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Schottky barrier diode in SOD-123 surface mount package with low forward voltage, 40V peak reverse voltage, 1A forward current, and low capacitance for high-frequency applications. |
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1N5819W
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Shandong Jingdao Microelectronics Co Ltd
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Schottky barrier rectifier with 20 V, 30 V, or 40 V maximum DC blocking voltage, 1 A average forward current, low forward voltage drop, high surge capability, and SOD-123FL surface mount package. |
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1N5819W
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AK Semiconductor
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Schottky barrier diode in SOD-123 package with low forward voltage drop, negligible reverse recovery time, and reverse voltage ratings of 20V, 30V, and 40V for 1N5817W, 1N5818W, and 1N5819W respectively. |
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1N5819WS
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AK Semiconductor
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Schottky barrier diode in SOD-323 package with low forward voltage drop, negligible reverse recovery time, and reverse voltage ratings of 20V, 30V, and 40V for 1N5817WS, 1N5818WS, and 1N5819WS respectively. |
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1N5819WS
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SUNMATE electronic Co., LTD
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Schottky barrier diode 1N5819WS in SOD-323 package features 40V peak repetitive reverse voltage, 350mA forward continuous current, low forward voltage drop, low capacitance of 50pF, and fast reverse recovery time of 10ns. |
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1N5819WS
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Shenzhen Heketai Electronics Co Ltd
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Schottky barrier diode in SOD-323 surface mount package with low forward voltage, 20V to 40V maximum DC blocking voltage, 1.0A average forward rectified current, and operating temperature range from -50 to +125°C. |
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1N5819W
