RD07MVS1
Abstract: RD07MVS1-101 T112 3M Touch Systems
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 OUTLINE DRAWING RD07MVS1 is a MOS FET type transistor
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RD07MVS1
Abstract: RD07MVS1B T112 3M Touch Systems
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1B Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 2.0+/-0.05 2 3.5+/-0.05 1.0+/-0.05
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RD07MUS2B
Abstract: transistor jc 817 gp 520 diode gp 817 RF POWER TRANSISTOR f763 transistor I 17-13 0773
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.
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rd07mus2b175mhz527mhz870mhz+6transistor jc 817gp 520 diodegp 817rf power transistorf763transistor i 17-13 0773
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RD07MUS2B
Abstract: Single-Stage amplifier GRM2162C1H151JD01E 817MHz RD07M
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-900-039-A Date : 10th Oct. ‘08 Rev.date : 30th Jun. 2010 Prepared : Y.Takase S.Kametani Confirmed SUBJECT: :T.Okawa RD07MUS2B single-stage amplifier RF performance at f=763-870MHz,Vdd=7.2V
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an-900-039-ard07mus2b763-870mhz084yh-g+8870mhz250macharacteristic1ja01grm1882c1h101ja01single-stage amplifiergrm2162c1h151jd01e817mhzrd07m
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GRM1882C1H100JA01D
Abstract: GRM1882C1H grm1882c1h4r0cz01d GRM1882C1H8R0DZ01 GRM1882C1H9R0DZ01D RPC05-182 LQG11A8N2S00 GRM1882C1H150JA01D GRM1882C1H120JA01D GRM1882C1H8R0DZ01D
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-900-040-A Date : 6th Aug. 2009 Rev.date : 30th Jun. 2010 Prepared : K.Ijuin S.Kametani Confirmed : T.Okawa RD01MUS1 & RD07MUS2B 2-Stage amplifier RF performance at SUBJECT: f=763-870MHz,Vdd=7.2V
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an-900-040-ard01mus1rd07mus2b763-870mhz+12086ze-g250magrm1882c1h100ja01dgrm1882c1hgrm1882c1h4r0cz01dgrm1882c1h8r0dz01grm1882c1h9r0dz01drpc05-182lqg11a8n2s00grm1882c1h150ja01dgrm1882c1h120ja01dgrm1882c1h8r0dz01d
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RD07MUS2B
Abstract: RPC10T Single-Stage amplifier GRM2162C1H101GD01E 2306C 135-175MHz GRM2162C1H200GD01E GRM2162C1H220GD01E GRM2162C1H430GD01E GRM2162C1H560GD01E
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-VHF-047-A Date : 15th Sep. ‘09 Rev. date : 22 th Jun. 2010 Prepared : Y.Takase S.Kametani Confirmed SUBJECT: :T.Okawa RD07MUS2B single-stage amplifier RF performance at f=135-175 MHz,Vdd=7.2V
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an-vhf-047-ard07mus2b083yh-g175mhz+11250ma2302s2306crpc10tsingle-stage amplifiergrm2162c1h101gd01e135-175mhzgrm2162c1h200gd01egrm2162c1h220gd01egrm2162c1h430gd01egrm2162c1h560gd01e
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RD07MVS1
Abstract: RD07MVS1-101 T112 07MVS1 3080D RD07MVS Rd07mvs1101
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD07MVS1 is a MOS FET type transistor
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RD07MVS1
Abstract: skam 199j 329J
Contextual Info: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-018-C Date : 12th Jun. 2003 Rev.date : 7th Jan. 2010 Prepared : M.Wada S.Kametani Confirmed : T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics RD07MVS1 RF characteristics data SUBJECT:
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RD07MVS1-101
Abstract: RD07MVS1 T112 ID-750 RD07M D07MVS1 3M Touch Systems
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 OUTLINE DRAWING RD07MVS1 is a MOS FET type transistor
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RD07MUS2B
Abstract: RD07MUS RD07MUS2 f763 gp 817 329J RD07M mitsubishi MOSFET jc 817 j-120
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W DESCRIPTION OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD07MUS2B is a MOS FET type transistor
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RD07MVS1
Abstract: ic 453 8p
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD07MVS1 is a MOS FET type transistor
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RD07MVS1
Abstract: RD01MUS1 17mml MITSUBISHI APPLICATION NOTE RF POWER gp 735
Contextual Info: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-006 Date : 21th Aug. 2003 Prepared : M.Wada Confirmed : T.Ohkawa RD07MVS1 & RD01MUS1 RF characteristics data at 800MHz Band. SUBJECT: SUMMARY: This application note show the RF Wide band characteristics data Po vs. Frequency
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an-900-006rd07mvs1rd01mus1800mhz+5031aa764-870mhz17mmlmitsubishi application note rf powergp 735
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RD07MVS1
Abstract: micro strip line
Contextual Info: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-018-B Date : 12th jun. 2003 Prepared : M.Wada S.Kametani Confirmed : T.Ohkawa RD07MVS1 RF characteristics data SUBJECT: SUMMARY: This application note show the RF characteristics Pin vs. Pout characteristics data and
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diode gp 434
Abstract: RD07MVS1 RD07MVS2 T112 07MVS1 PO520 zener gp 434
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS2 RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 2.0+/-0.05 2 INDEX MARK Gate For output stage of high power amplifiers In VHF/UHF band mobile radio sets.
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RD01MUS1
Abstract: RD07MVS1B
Contextual Info: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-028-A Date : 6th July. 2007 Rev.date : 7th Jan. 2010 Prepared : Y.Takase S.Kametani Confirmed : T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD01MUS1 & RD07MVS1B 2-Stage amplifier RF performance f= 740-870MHz.
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GRM2162C1H101JA01D
Abstract: H1002 Single-Stage amplifier GRM2162C1H120JZ01D GRM2162C1H160JZ01D GRM2162C1H300JZ01D GRM2162C1H560JZ01D GRM2162C1H8R0DZ01D GRM216R11H223KA01E RD07MUS2B
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-900-041-A Date : 8th Mar. ‘10 Rev.date : 30th Jun. 2010 Prepared : K.IJUIN S.Kametani Confirmed SUBJECT: :T.Okawa RD07MUS2B TETRA single-stage amplifier at f=800-870MHz,Vdd=3.6V SUMMARY: This application note shows the TETRA data .
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an-900-041-ard07mus2b800-870mhz086ze-g+14800mhz820mhz840mhz860mhz870mhzgrm2162c1h101ja01dh1002single-stage amplifiergrm2162c1h120jz01dgrm2162c1h160jz01dgrm2162c1h300jz01dgrm2162c1h560jz01dgrm2162c1h8r0dz01dgrm216r11h223ka01e
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GRM2162C1H180JZ01D
Abstract: RD07MUS2B GRM2162C1H101JA01D GRM2162C1H120JZ01D Single-Stage amplifier GRM2162C1H270JZ01D GRM2162C1H300JZ01D GRM2162C1H560JZ01D murata 897 Mhz AN-UHF-105-A
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-105-A Date : 22th Dec. 2009 Rev. Date :22th Jun. 2010 Prepared : Y.Takase S.Kametani Confirmed :T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD07MUS2B TETRA single-stage amplifier at f=380-430MHz,Vdd=7.2V
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RD07MVS1
Abstract: RD01MUS1
Contextual Info: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-008 Date : 7th Oct. 2003 Prepared : M.Wada S.Kametani Confirmed : T.Ohkawa RD01MUS1 & RD07MVS1 2Stage amplifier RF characteristics data at 800MHz Band. SUBJECT: SUMMARY: This application note show the RF Wide band characteristics data
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Contextual Info: < Silicon RF Power MOS FET Discrete > RD07MVS1 RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING DESCRIPTION 0.2+/-0.05 (0.22) 6.0+/-0.15 specifically designed for VHF/UHF RF power 2.0+/-0.05 1.0+/-0.05 4.9+/-0.15 FEATURES
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MAR 527 transistor
Abstract: RD07MVS1B-101 transistor MAR 439 RD07MVS1B RD07MVS1 T112 mar 640 MOSFET TRANSISTOR mar 649 MOSFET TRANSISTOR T06 transistor
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1B Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 2.0+/-0.05 2 For output stage of high power amplifiers in
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marking 7W 66
Abstract: AN-UHF-105 RD07MUS2B transistor jc 817 AN-UHF-116 AN-UHF116 GP 830 diode diode gp 424 AN-900-041
Contextual Info: < Silicon RF Power MOS FET Discrete > RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W OUTLINE DRAWING RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications. 6.0+/-0.15
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rd07mus2b175mhz527mhz870mhz+10vhf/uhf/870mhzoct2011marking 7w 66an-uhf-105transistor jc 817an-uhf-116an-uhf116gp 830 diodediode gp 424an-900-041
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RD07MUS2B
Abstract: RD07MUS2 RD07MUS diode gp 424 RD07M AN-VHF-046 AN-UHF-116 f763 AN-UHF-106 AN-VHF-053
Contextual Info: Silicon RF Power Semiconductors RD07MUS2B ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications.
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rd07mvs1b101
Abstract: 3M Touch Systems D07MVS1
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1B Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 2.0+/-0.05 2 3.5+/-0.05 1.0+/-0.05
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RD07MVS2
Abstract: RD07MVS1 T112 teflon s-parameter 3M Touch Systems diode gp 434
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS2 RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 6.0+/-0.15 FEATURES 2.0+/-0.05
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