RD07MUS2B
Abstract: transistor jc 817 gp 520 diode gp 817 RF POWER TRANSISTOR f763 transistor I 17-13 0773
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.
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rd07mus2b175mhz527mhz870mhz+6transistor jc 817gp 520 diodegp 817rf power transistorf763transistor i 17-13 0773
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RD07MUS2B
Abstract: Single-Stage amplifier GRM2162C1H151JD01E 817MHz RD07M
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-900-039-A Date : 10th Oct. ‘08 Rev.date : 30th Jun. 2010 Prepared : Y.Takase S.Kametani Confirmed SUBJECT: :T.Okawa RD07MUS2B single-stage amplifier RF performance at f=763-870MHz,Vdd=7.2V
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an-900-039-ard07mus2b763-870mhz084yh-g+8870mhz250macharacteristic1ja01grm1882c1h101ja01single-stage amplifiergrm2162c1h151jd01e817mhzrd07m
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GRM1882C1H100JA01D
Abstract: GRM1882C1H grm1882c1h4r0cz01d GRM1882C1H8R0DZ01 GRM1882C1H9R0DZ01D RPC05-182 LQG11A8N2S00 GRM1882C1H150JA01D GRM1882C1H120JA01D GRM1882C1H8R0DZ01D
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-900-040-A Date : 6th Aug. 2009 Rev.date : 30th Jun. 2010 Prepared : K.Ijuin S.Kametani Confirmed : T.Okawa RD01MUS1 & RD07MUS2B 2-Stage amplifier RF performance at SUBJECT: f=763-870MHz,Vdd=7.2V
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an-900-040-ard01mus1rd07mus2b763-870mhz+12086ze-g250magrm1882c1h100ja01dgrm1882c1hgrm1882c1h4r0cz01dgrm1882c1h8r0dz01grm1882c1h9r0dz01drpc05-182lqg11a8n2s00grm1882c1h150ja01dgrm1882c1h120ja01dgrm1882c1h8r0dz01d
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RD07MUS2B
Abstract: RD07MUS RD07MUS2 f763 gp 817 329J RD07M mitsubishi MOSFET jc 817 j-120
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W DESCRIPTION OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD07MUS2B is a MOS FET type transistor
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rd07mus2b175mhz527mhz870mhz+9rd07musrd07mus2f763gp 817329jrd07mmitsubishi mosfetjc 817j-120
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2SA601
Abstract: TlO31
Contextual Info: Philips Semiconductors Product specification Low-voltage LNA and mixer-1 GHz SA601 PIN C O N FIG U R A TIO N DES C R IPTIO N FEATURES The SA601 is a combined RF amplifier and mixer designed for high-performance low-power communication systems from 800-1200MHz. The low-noise preamplifier
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sa601800-1200mhz900mhz2sa601+1tlo31
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marking 7W 66
Abstract: AN-UHF-105 RD07MUS2B transistor jc 817 AN-UHF-116 AN-UHF116 GP 830 diode diode gp 424 AN-900-041
Contextual Info: < Silicon RF Power MOS FET Discrete > RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W OUTLINE DRAWING RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications. 6.0+/-0.15
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rd07mus2b175mhz527mhz870mhz+10vhf/uhf/870mhzoct2011marking 7w 66an-uhf-105transistor jc 817an-uhf-116an-uhf116gp 830 diodediode gp 424an-900-041
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RD07MUS2B
Abstract: RD07MUS2 RD07MUS diode gp 424 RD07M AN-VHF-046 AN-UHF-116 f763 AN-UHF-106 AN-VHF-053
Contextual Info: Silicon RF Power Semiconductors RD07MUS2B ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications.
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rd07mus2b175mhz527mhz870mhz+10vhf/uhf/870mhzrd07mus2rd07musdiode gp 424rd07man-vhf-046an-uhf-116f763an-uhf-106an-vhf-053
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Contextual Info: CDMA RF SAW Filter SF14 Series Features How to Order SF 14 - 0881 M 5 UB B1 • Small size • Low insertion loss • High selectivity • Hermetic seal ① ② ③ ④ ⑤ ⑥ ⑦ ① Type of Product SAW Filter ② Package Size ③ Nominal Center Frequency
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sf14-0881m5ubb1sf14-0881m5uua1869mhz894mhz+1sf14-0878m5uba1
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800-1200MHZ
Abstract: filter 900MHz noise figure Mixer Output IP3 41 dBm 2Ghz mixer amplifier 900mhz amplifier mixer circuit diagram CL04 12 mixer SA601 SA601DK
Contextual Info: NAPC/PHILIPS SEMICOND b7E D m bbSB'ISM QQö'iOSS 7S1 « S I C B Philips Semiconductors RF Communications Products Objective specification Low voltage LNA and mixer - 1GHz SA601 DESCRIPTION FEATURES The SA601 is a combined RF amplifier and mixer designed for high-performance
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sa601800-1200mhz900mhzfilter 900mhz noise figure+7mixer output ip3 41 dbm2ghz mixeramplifier 900mhzamplifier mixer circuit diagramcl04 12mixersa601dk
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RD07MUS2B
Abstract: f763 MITSUBISHI RF POWER MOS FET S 170 MOSFET TRANSISTOR 329J MOS 6509 mitsubishi MOSFET RD07MUS2
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W DESCRIPTION OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD07MUS2B is a MOS FET type transistor
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Contextual Info: Home News Global Contact Products About Electronic Components & Devices Sitemap RF SAW Filter Product List GSM Size L x W x H mm Output Application Pass Band Frequency SF14-0881M5UBA1 1.4 x 1.1 × 0.6 Balanced GSM850 Rx 869MHz 894MHz SF14-0942M5UBA1 1.4 × 1.1 × 0.6
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Contextual Info: CDMA RF SAW Filter SF14 Series Features How to Order SF 14 - 0881 M 5 UB B1 • Small size • Low insertion loss • High selectivity • Hermetic seal ① ② ③ ④ ⑤ ⑥ ⑦ ① Type of Product SAW Filter ② Package Size ③ Nominal Center Frequency
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817MHz
Contextual Info: CDMA RF SAW Filter SF14 Series Features How to Order SF 14 - 0881 M 5 UB B1 • Small size • Low insertion loss • High selectivity • Hermetic seal ① ② ③ ④ ⑤ ⑥ ⑦ ① Type of Product SAW Filter ② Package Size ③ Nominal Center Frequency
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