RD07MUS2B
Abstract: transistor jc 817 gp 520 diode gp 817 RF POWER TRANSISTOR f763 transistor I 17-13 0773
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.
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rd07mus2b175mhz527mhz870mhz+6transistor jc 817gp 520 diodegp 817rf power transistorf763transistor i 17-13 0773
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RD07MUS2B
Abstract: Single-Stage amplifier GRM2162C1H151JD01E 817MHz RD07M
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-900-039-A Date : 10th Oct. ‘08 Rev.date : 30th Jun. 2010 Prepared : Y.Takase S.Kametani Confirmed SUBJECT: :T.Okawa RD07MUS2B single-stage amplifier RF performance at f=763-870MHz,Vdd=7.2V
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an-900-039-ard07mus2b763-870mhz084yh-g+8870mhz250macharacteristic1ja01grm1882c1h101ja01single-stage amplifiergrm2162c1h151jd01e817mhzrd07m
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GRM1882C1H100JA01D
Abstract: GRM1882C1H grm1882c1h4r0cz01d GRM1882C1H8R0DZ01 GRM1882C1H9R0DZ01D RPC05-182 LQG11A8N2S00 GRM1882C1H150JA01D GRM1882C1H120JA01D GRM1882C1H8R0DZ01D
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-900-040-A Date : 6th Aug. 2009 Rev.date : 30th Jun. 2010 Prepared : K.Ijuin S.Kametani Confirmed : T.Okawa RD01MUS1 & RD07MUS2B 2-Stage amplifier RF performance at SUBJECT: f=763-870MHz,Vdd=7.2V
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an-900-040-ard01mus1rd07mus2b763-870mhz+12086ze-g250magrm1882c1h100ja01dgrm1882c1hgrm1882c1h4r0cz01dgrm1882c1h8r0dz01grm1882c1h9r0dz01drpc05-182lqg11a8n2s00grm1882c1h150ja01dgrm1882c1h120ja01dgrm1882c1h8r0dz01d
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RD07MUS2B
Abstract: RPC10T Single-Stage amplifier GRM2162C1H101GD01E 2306C 135-175MHz GRM2162C1H200GD01E GRM2162C1H220GD01E GRM2162C1H430GD01E GRM2162C1H560GD01E
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-VHF-047-A Date : 15th Sep. ‘09 Rev. date : 22 th Jun. 2010 Prepared : Y.Takase S.Kametani Confirmed SUBJECT: :T.Okawa RD07MUS2B single-stage amplifier RF performance at f=135-175 MHz,Vdd=7.2V
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an-vhf-047-ard07mus2b083yh-g175mhz+11250ma2302s2306crpc10tsingle-stage amplifiergrm2162c1h101gd01e135-175mhzgrm2162c1h200gd01egrm2162c1h220gd01egrm2162c1h430gd01egrm2162c1h560gd01e
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RD07MUS2B
Abstract: RD07MUS RD07MUS2 f763 gp 817 329J RD07M mitsubishi MOSFET jc 817 j-120
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W DESCRIPTION OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD07MUS2B is a MOS FET type transistor
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rd07mus2b175mhz527mhz870mhz+9rd07musrd07mus2f763gp 817329jrd07mmitsubishi mosfetjc 817j-120
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GRM2162C1H101JA01D
Abstract: H1002 Single-Stage amplifier GRM2162C1H120JZ01D GRM2162C1H160JZ01D GRM2162C1H300JZ01D GRM2162C1H560JZ01D GRM2162C1H8R0DZ01D GRM216R11H223KA01E RD07MUS2B
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-900-041-A Date : 8th Mar. ‘10 Rev.date : 30th Jun. 2010 Prepared : K.IJUIN S.Kametani Confirmed SUBJECT: :T.Okawa RD07MUS2B TETRA single-stage amplifier at f=800-870MHz,Vdd=3.6V SUMMARY: This application note shows the TETRA data .
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an-900-041-ard07mus2b800-870mhz086ze-g+14800mhz820mhz840mhz860mhz870mhzgrm2162c1h101ja01dh1002single-stage amplifiergrm2162c1h120jz01dgrm2162c1h160jz01dgrm2162c1h300jz01dgrm2162c1h560jz01dgrm2162c1h8r0dz01dgrm216r11h223ka01e
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GRM2162C1H180JZ01D
Abstract: RD07MUS2B GRM2162C1H101JA01D GRM2162C1H120JZ01D Single-Stage amplifier GRM2162C1H270JZ01D GRM2162C1H300JZ01D GRM2162C1H560JZ01D murata 897 Mhz AN-UHF-105-A
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-105-A Date : 22th Dec. 2009 Rev. Date :22th Jun. 2010 Prepared : Y.Takase S.Kametani Confirmed :T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD07MUS2B TETRA single-stage amplifier at f=380-430MHz,Vdd=7.2V
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an-uhf-105-ard07mus2b380-430mhz086ze-g+13380mhz405mhz430mhz250ma18kspsgrm2162c1h180jz01dgrm2162c1h101ja01dgrm2162c1h120jz01dsingle-stage amplifiergrm2162c1h270jz01dgrm2162c1h300jz01dgrm2162c1h560jz01dmurata 897 mhz
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marking 7W 66
Abstract: AN-UHF-105 RD07MUS2B transistor jc 817 AN-UHF-116 AN-UHF116 GP 830 diode diode gp 424 AN-900-041
Contextual Info: < Silicon RF Power MOS FET Discrete > RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W OUTLINE DRAWING RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications. 6.0+/-0.15
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rd07mus2b175mhz527mhz870mhz+10vhf/uhf/870mhzoct2011marking 7w 66an-uhf-105transistor jc 817an-uhf-116an-uhf116gp 830 diodediode gp 424an-900-041
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RD07MUS2B
Abstract: RD07MUS2 RD07MUS diode gp 424 RD07M AN-VHF-046 AN-UHF-116 f763 AN-UHF-106 AN-VHF-053
Contextual Info: Silicon RF Power Semiconductors RD07MUS2B ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications.
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rd07mus2b175mhz527mhz870mhz+10vhf/uhf/870mhzrd07mus2rd07musdiode gp 424rd07man-vhf-046an-uhf-116f763an-uhf-106an-vhf-053
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AN-UHF-098
Contextual Info: < Silicon RF Power MOS FET Discrete > RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W OUTLINE DRAWING RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications. 6.0+/-0.15
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rd07mus2b175mhz527mhz870mhz+2vhf/uhf/870mhzan-uhf-098
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RD07MUS2B
Abstract: GRM2162C1H120GD01E Single-Stage amplifier GRM2162C1H101GD01E GRM2162C1H290GD01E GRM2162C1H540GD01E GRM2162C1H8R0DD01E AN-UHF-098-B gp 219 GP 743
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-098-B Date : 15th Sep. 2009 Rev. Date :22th Jun. 2010 Prepared : Y.Takase S.Kametani Confirmed :T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD07MUS2B single-stage amplifier
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an-uhf-098-brd07mus2b400-470mhz086ze-g+12470mhz250magrm216r11h223ka01ea0603grm2162c1h120gd01esingle-stage amplifiergrm2162c1h101gd01egrm2162c1h290gd01egrm2162c1h540gd01egrm2162c1h8r0dd01egp 219gp 743
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350-400MHZ
Abstract: GRM2162C1H220JZ01D murata 371 Single-Stage amplifier GRM2162C1H101JA01D GRM2162C1H120JZ01D GRM2162C1H240JZ01D GRM2162C1H270JZ01D GRM2162C1H300JZ01D GRM2162C1H560JZ01D
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-106-A Date : 16th Feb. 2010 Rev. Date :22th Jun. 2010 Prepared : Y.Takase S.Kametani Confirmed :T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD07MUS2B TETRA single-stage amplifier at f=350-400MHz,Vdd=7.2V
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an-uhf-106-ard07mus2b350-400mhz08xxa-g+14350mhz375mhz400mhz250ma18kspsgrm2162c1h220jz01dmurata 371single-stage amplifiergrm2162c1h101ja01dgrm2162c1h120jz01dgrm2162c1h240jz01dgrm2162c1h270jz01dgrm2162c1h300jz01dgrm2162c1h560jz01d
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RD07MUS2B
Abstract: f763 MITSUBISHI RF POWER MOS FET S 170 MOSFET TRANSISTOR 329J MOS 6509 mitsubishi MOSFET RD07MUS2
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W DESCRIPTION OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD07MUS2B is a MOS FET type transistor
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rd07mus2b175mhz527mhz870mhz+7f763mitsubishi rf power mos fets 170 mosfet transistor329jmos 6509mitsubishi mosfetrd07mus2
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7107 GP
Abstract: RD07MUS2B Single-Stage amplifier GRM2162C1H101GD01E GRM2162C1H120GD01E GRM2162C1H240GD01E GRM2162C1H540GD01E GRM2162C1H8R0DD01E GRM2162C1H9R0DD01E micro strip line
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-096-A Date : 6th Oct. 2008 Rev. Date :22th Jun. 2010 Prepared : Y.Takase S.Kametani Confirmed :T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD07MUS2B single-stage amplifier
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an-uhf-096-ard07mus2b450-527mhz083yh-g+12527mhz250ma10ohm7107 gpsingle-stage amplifiergrm2162c1h101gd01egrm2162c1h120gd01egrm2162c1h240gd01egrm2162c1h540gd01egrm2162c1h8r0dd01egrm2162c1h9r0dd01emicro strip line
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RD07MUS2B
Abstract: RD07MUS2
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W DESCRIPTION OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD07MUS2B is a MOS FET type transistor
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rd07mus2b175mhz527mhz870mhz+1rd07mus2
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