RPC05 Search Results

RPC03

Abstract: RPC03T RPC10 rpc05
Contextual Info: RPC03 [1005] RPC05 [1608] RPC10 [2012] RPC18 [3216] 小型チップ固定抵抗器 RPCシリーズ Small size fixed chip resistors （RPC Series ） •特長 Features ■構造及び材料 Structure,Materials *高信頼メタルグレーズ厚膜抵抗体です。

Contextual Info: RPC03 [1005] RPC05 [1608] RPC10 [2012] RPC18 [3216] 小型チップ固定抵抗器 RPCシリーズ Small size fixed chip resistors （RPC Series ） •特長 Features ■構造及び材料 Structure,Materials *高信頼メタルグレーズ厚膜抵抗体です。

GRM1882C1H100JA01D

Abstract: GRM1882C1H grm1882c1h4r0cz01d GRM1882C1H8R0DZ01 GRM1882C1H9R0DZ01D RPC05-182 LQG11A8N2S00 GRM1882C1H150JA01D GRM1882C1H120JA01D GRM1882C1H8R0DZ01D
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-900-040-A Date : 6th Aug. 2009 Rev.date : 30th Jun. 2010 Prepared : K.Ijuin S.Kametani Confirmed : T.Okawa RD01MUS1 & RD07MUS2B 2-Stage amplifier RF performance at SUBJECT: f=763-870MHz,Vdd=7.2V

Contextual Info: ZPC05 [1608] 高電力・耐静電気チップ固定抵抗器 High power・anti-static thick film chip resistors •特長 Features ■構造及び材料 Structure,Materials *高電力保証１６０８サイズで0.2Wを実現しています。

Contextual Info: < Silicon RF Power MOS FET Discrete > RD02LUS2 RoHS Compliance, Silicon MOSFET Power Transistor 470MHz,2W OUTLINE DRAWING DESCRIPTION RD02LUS2 is a MOS FET type transistor specifically 4.4 +/-0.1 designed for VHF/UHF RF amplifiers applications. T YPE N AM E

A6GA-CCMFP3NN60F

Abstract: A6GA-CCMFP3NN300F mfp3n PC03003N MFP3NPC03003N bap-05026 A80BD-J61BT13 cc-link LSI mitsubishi A1 series plc communication pin diagram kc7050
Contextual Info: Request Concerning Safe Design Be sure to read before use • Mitsubishi Electric is working toward improving quality and reliability, but products may fail or malfunction. Please pay particular attention to safe design, e.g. safety-considered redundant design, fire

taiyosya

Abstract: grm188r11h RPC03 RD01MUS2 GRM1882 GRM2162C1H RD07MVS1B GRM1882C1H GRM2162C GRM2162C1H470GD01E
Contextual Info: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-085-A Date : 24th April 2007 Rev.date : 7th Jan. 2010 Prepared : Y. Takase Confirmed : S. Kametani Taking charge of Silicon RF by MIYOSHI Electronics RD01MUS2 & RD07MVS1B RF characteristic data at Vds=7.2V, 400-470 MHz.

RPC03

Abstract: ZPX05
Contextual Info: ZPX03 [1005] ZPX05 [1608] ZPX10 [2012] 高電力・耐サージ・耐パルスチップ固定抵抗器 High power・anti-surge anti-pulse thick film chip resistors •特長 Features *独自の超精密加工・製膜技術を駆使し構造の最適化を実現する事で、非常に優れた耐静電気特性を実現しました。

ZPX05

Abstract: RPC03 ZPX03
Contextual Info: ZPX03 [1005] ZPX05 [1608] ZPX10 [2012] 高電力・耐サージ・耐パルスチップ固定抵抗器 High power・anti-surge anti-pulse thick film chip resistors •特長 Features *独自の超精密加工・製膜技術を駆使し構造の最適化を実現する事で、非常に優れた耐静電気特性を実現しました。

RPC-03005

Abstract: RPC-05025 TPC-02026 TPC-03040
Contextual Info: LINEARITYÌ WIDTH COIL FOR VIDEO DISPLA Y / H ' h UNIT:mm H • h- 18 29 MAX u N H 16.5 TYPICAL 16 8±2 V/ L-| - LINEARITY COIL 5.5 WIDTH COIL INDUCTANCE VS CURRENT CURVES FOR LINEARITY COIL ELECTRICAL SPECIFICATION FOR WIDTH COIL INDUCTANCE 8 mH ~38pH D.C.R.

GRM1882C1H5R0CZ01D

Abstract: GRM1882C1H101JA01D GRM188R11H102KA01D capasitor 6.5v .14 f RPC05-101J GRM1882C1H5R0C grm188r11h RD02MUS1B GRM1882C1H150JA01D RPC05-0R0
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-111 Date : 18th Aug. 2010 Prepared : K.Osaki, Y.Tanaka Confirmed : S.Kametani Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD00HVS1 & RD02MUS1B 2-stage amplifier RF performance at f=400-470MHz, Vdd=7.2/6.5V

RD01MUS2

Abstract: RD07MUS2B GRM2162C1H101GD01E GRM2162C1H120GD01E GRM2162C1H200GD01E GRM2162C1H220GD01E GRM2162C1H390GD01E GRM2162C1H8R0DD01E rpc05 2306C
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-097-B Date : 13th Mar. 2009 Rev. Date :22th Jun. 2010 Prepared : Y.Takase S.Kametani Confirmed :T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics RD01MUS2 & RD07MUS2B RF characteristics data at f=400-470MHz,Vdd=7.2V

RD01MUS2

Abstract: rpc03 grm188r11h RD07MVS1B taiyo RPC03 micro electronics
Contextual Info: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-085 Date : 24th April 2007 Prepared : Y. Takase Confirmed : S. Kametani RD01MUS2 & RD07MVS1B RF characteristic data at Vds=7.2V, 400-470 MHz. SUBJECT: SUMMARY: This application note shows the RF Broad band characteristic data Po vs. Frequency