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RD00HVS1 Datasheets (3)

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Mitsubishi

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
RD00HVS1		Mitsubishi	Silicon MOSFET Power Transistor 175 MHz, 0.5 W	Original	PDF	164.71KB	6
RD00HVS1		Mitsubishi	Silicon MOSFET Power Transistor 175MHz, 0.5W	Original	PDF	106.67KB	6
RD00HVS1		Mitsubishi	Transistor Mosfet N-CH 30V 0.2A 3SOT-89	Original	PDF	145.11KB	6

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Mitsubishi Electric


Mitsubishi Electric RD00HVS1-T113 POWER FIELD-EFFECT TRANSISTOR, N-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	RD00HVS1-T113		2,160			1 $5.40 10 $5.40 100 $5.40 1000 $2.70 10000 $2.70	Buy Now

RD00HVS1 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
gp 722 Abstract: 4006C Hokuriku Electric Industry GRM2162C1H200GD01E GRM2162C1H240GD01E GRM2162C1H680GD01E GRM2163C1H3R0CD01E GRM2164C1H2R0CD01E GRM216R11H102KA01E GRM216R11H223KA01E Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-VHF-036-A Date : 11th Jul 2006 Rev. date : 22 th Jun. 2010 Prepared : Y.Kosaka E.Akiyama Confirmed : S.Kametani RD00HVS1 RF characteristics data at f=150-162MHz,Vdd=7.2V SUBJECT: SUMMARY: This application note shows the RF characteristics Frequency Characteristics and Pin vs. Pout	Original	an-vhf-036-a rd00hvs1 150-162mhz 150mhz +14156mhz 162mhz c72jb cr1/10-241jb gp 722 4006c hokuriku electric industry grm2162c1h200gd01e grm2162c1h240gd01e grm2162c1h680gd01e grm2163c1h3r0cd01e grm2164c1h2r0cd01e grm216r11h102ka01e grm216r11h223ka01e	PDF
j 6815 transistor Abstract: TRANSISTOR J 6815 EQUIVALENT C 5763 transistor transistor M 9718 5609 transistor 4082 mitsubishi 9622 transistor 4303 sot89 8948 780-4 transistor Contextual Info: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELETROSTATIC SENSITIVE DEVICES MITSUBISHI RF POWER MOS FET Revision date:26 /Feb.’02 RD00HVS1 Silicon MOSFET Power Transistor 175MHz,0.5W DESCRIPTION RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications .	OCR Scan	rd00hvs1 175mhz 48max ot-89 +10j 6815 transistor transistor j 6815 equivalent c 5763 transistor transistor m 9718 5609 transistor 4082 mitsubishi 9622 transistor 4303 sot89 8948 780-4 transistor	PDF
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD00HVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W OUTLINE DRAWING DESCRIPTION RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.	Original	rd00hvs1 175mhz rd00hvs1-101	PDF
RD00HVS1 Abstract: transistor 5024 transistor D 5024 TRANSISTOR 7916 Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD00HVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W OUTLINE DRAWING DESCRIPTION RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.	Original	rd00hvs1 175mhz transistor 5024 transistor d 5024 +1transistor 7916	PDF
transistor D 5024 Abstract: RD00HVS1 8582 Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HVS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 175MHz,0.5W OUTLINE DRAWING DESCRIPTION RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.	Original	rd00hvs1 175mhz transistor d 5024 8582	PDF
GRM1882C1H5R0CZ01D Abstract: GRM1882C1H101JA01D GRM188R11H102KA01D capasitor 6.5v .14 f RPC05-101J GRM1882C1H5R0C grm188r11h RD02MUS1B GRM1882C1H150JA01D RPC05-0R0 Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-111 Date : 18th Aug. 2010 Prepared : K.Osaki, Y.Tanaka Confirmed : S.Kametani Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD00HVS1 & RD02MUS1B 2-stage amplifier RF performance at f=400-470MHz, Vdd=7.2/6.5V	Original	an-uhf-111 rd00hvs1 rd02mus1b 400-470mhz +12470mhz 103aj-g 400mhz grm1882c1h5r0cz01d grm1882c1h101ja01d grm188r11h102ka01d capasitor 6.5v .14 f rpc05-101j grm1882c1h5r0c grm188r11h grm1882c1h150ja01d rpc05-0r0	PDF
RD00HVS1 Abstract: RF Transistor s-parameter vhf T113 RD00HVS1-101 Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W OUTLINE DRAWING DESCRIPTION RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.	Original	rd00hvs1 175mhz rf transistor s-parameter vhf t113 +1rd00hvs1-101	PDF
transistor D 5024 Abstract: 1383 transistor transistor d 1264 a 4134 mosfet 5024 transistor TRANSISTOR 7916 transistor 5024 RD00HVS1 TRANSISTOR 1383 transistor A 1264 Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD00HVS1 Silicon MOSFET Power Transistor 175MHz,0.5W OUTLINE DRAWING DESCRIPTION 4.6MAX RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.	Original	rd00hvs1 175mhz 48max 53max +9transistor d 5024 1383 transistor transistor d 1264 a 4134 mosfet 5024 transistor transistor 7916 transistor 5024 transistor 1383 transistor a 1264	PDF
1383 transistor Abstract: TRansistor C 101 RD00HVS1-101 4134 mosfet RD00HVS1 TRANSISTOR 1383 T06M transistor D 5024 Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W OUTLINE DRAWING DESCRIPTION RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.	Original	rd00hvs1 175mhz 1383 transistor transistor c 101 +5rd00hvs1-101 4134 mosfet transistor 1383 t06m transistor d 5024	PDF
Contextual Info: ATTENTION O B SER V E PRECAUTIONS FO R HANDLING ELETROSTATIC SENSITIVE DEVICES Revision date:25 /Nov.’02 MITSUBISHI RF POWER MOS FET RD00HVS1 Silicon MOSFET Power Transistor 175MHz,0.5W DESCRIPTION RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.	OCR Scan	rd00hvs1 175mhz 25deg	PDF
8582 Contextual Info: < Silicon RF Power MOS FET Discrete > RD00HVS1 RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W OUTLINE DRAWING DESCRIPTION RD00HVS1 is a MOS FET type transistor specifically 4.4+/-0.1 designed for VHF/UHF RF amplifiers applications. TYPE NAME	Original	rd00hvs1 175mhz rd00hvs1-101 oct2011 +18582	PDF
GRM2162C Abstract: GRM2162C1H100FD01E GRM2162C1H110GD01E GRM2162C1H150GD01E GRM2162C1H4R0CD01E GRM2162C1H5R0CD01E GRM2162C1H680GD01E GRM216R11H223KA01E RD00HVS1 30t60 Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-076-A Date : 29th Jun. 2006 Rev. Date :22th Jun. 2010 Prepared : Y.Kosaka E.Akiyama Confirmed : S.Kametani Taking charge of Silicon RF by MIYOSHI Electronics RD00HVS1 RF characteristics data at f=450-470MHz,Vdd=7.2V	Original	an-uhf-076-a rd00hvs1 450-470mhz 450mhz +12460mhz 470mhz c1h100fd01e grm2162c1h680gd01e grm2162c grm2162c1h100fd01e grm2162c1h110gd01e grm2162c1h150gd01e grm2162c1h4r0cd01e grm2162c1h5r0cd01e grm216r11h223ka01e 30t60	PDF
Contextual Info: < Silicon RF Power MOS FET Discrete > RD00HVS1 RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W OUTLINE DRAWING DESCRIPTION RD00HVS1 is a MOS FET type transistor specifically 4.4+/-0.1 designed for VHF/UHF RF amplifiers applications. TYPE NAME	Original	rd00hvs1 175mhz rd00hvs1-101	PDF
RD100HHF1 Abstract: RD70HVF1 rd16hhf1 RD15HVF1 RD06HVF1 RD16HHF1 application notes RD70HVF RD70HHF1 RD01MUS2 RD06HHF1 Contextual Info: SiRF Device Family for RF Power Amplification General Catalog Better Performance For Radio Communication Network Professional Mobile Radio Marine Radio Telematics AMPS/GSM Features Full Line up Frequency : 30-900MHz Output Power : 0.3-100W Operation Voltage : 7.2-12.5V	Original	30-900mhz h-cr624-e ki-0612 rd100hhf1 +9rd70hvf1 rd16hhf1 rd15hvf1 rd06hvf1 rd16hhf1 application notes rd70hvf rd70hhf1 rd01mus2 rd06hhf1	PDF