RPC03 Search Results

RPC03

Abstract: RPC03T RPC10 rpc05
Contextual Info: RPC03 [1005] RPC05 [1608] RPC10 [2012] RPC18 [3216] 小型チップ固定抵抗器 RPCシリーズ Small size fixed chip resistors （RPC Series ） •特長 Features ■構造及び材料 Structure,Materials *高信頼メタルグレーズ厚膜抵抗体です。

Contextual Info: RPC03 [1005] RPC05 [1608] RPC10 [2012] RPC18 [3216] 小型チップ固定抵抗器 RPCシリーズ Small size fixed chip resistors （RPC Series ） •特長 Features ■構造及び材料 Structure,Materials *高信頼メタルグレーズ厚膜抵抗体です。

HBT 01 05

Contextual Info: Mitsubishi Semiconductors MGFS38E3336-01 3.3 - 3.6GHz HBT MMIC MODULE Specifications are subject to change without notice. Outline Drawing DESCRIPTION MGFS38E3336 is a GaAs RF amplifier designed for WiMAX CPE. DIM in mm 1.0 4.0 • • • • • • •

GRM31CB30J476K

Abstract: MGFS38E2325 RPC03T
Contextual Info: Mitsubishi Semiconductors MGFS38E2325-01 2.3 - 2.5GHz HBT MMIC MODULE Specifications are subject to change without notice. Outline Drawing DESCRIPTION MGFS38E2325 is a GaAs RF amplifier designed for WiMAX CPE. DIM in mm 1.0 4.0 • • • • • • •

Contextual Info: Mitsubishi Semiconductors MGFS38E3336-01 3.3 - 3.6GHz HBT MMIC MODULE Specifications are subject to change without notice. Outline Drawing DESCRIPTION MGFS38E3336 is a GaAs RF amplifier designed for WiMAX CPE. DIM in mm 1.0 4.0 • • • • • • •

RPC33

Contextual Info: RPC33 [3225] RPC50 [5025] RPC1S [6432] 電力型チップ固定抵抗器 RPCシリーズ High electric power fixed chip resistors （RPC Series ） •特長 Features ■構造及び材料 Structure,Materials *高信頼メタルグレーズ厚膜抵抗体です。

taiyosya

Abstract: grm188r11h RPC03 RD01MUS2 GRM1882 GRM2162C1H RD07MVS1B GRM1882C1H GRM2162C GRM2162C1H470GD01E
Contextual Info: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-085-A Date : 24th April 2007 Rev.date : 7th Jan. 2010 Prepared : Y. Takase Confirmed : S. Kametani Taking charge of Silicon RF by MIYOSHI Electronics RD01MUS2 & RD07MVS1B RF characteristic data at Vds=7.2V, 400-470 MHz.

RPC03

Abstract: ZPX05
Contextual Info: ZPX03 [1005] ZPX05 [1608] ZPX10 [2012] 高電力・耐サージ・耐パルスチップ固定抵抗器 High power・anti-surge anti-pulse thick film chip resistors •特長 Features *独自の超精密加工・製膜技術を駆使し構造の最適化を実現する事で、非常に優れた耐静電気特性を実現しました。

ZPX05

Abstract: RPC03 ZPX03
Contextual Info: ZPX03 [1005] ZPX05 [1608] ZPX10 [2012] 高電力・耐サージ・耐パルスチップ固定抵抗器 High power・anti-surge anti-pulse thick film chip resistors •特長 Features *独自の超精密加工・製膜技術を駆使し構造の最適化を実現する事で、非常に優れた耐静電気特性を実現しました。

RPC03

Abstract: RPC0 0420 4R720
Contextual Info: RPC0 Radial Power Choke A B D E C INDUCTANCES 1.0 µH to 390 µH SATURATION CURRENT Lowers inductance 10% OPERATING TEMPERATURE - 55°C to +125°C TESTING LCR Bridge at 1kHZ INDUCTANCE TOLERANCE ±10%. MARKING Part number printed on part SLEEVING Coils covered with Poly-Olefin shrink tubing

RPC-03005

Abstract: RPC-05025 TPC-02026 TPC-03040
Contextual Info: LINEARITYÌ WIDTH COIL FOR VIDEO DISPLA Y / H ' h UNIT:mm H • h- 18 29 MAX u N H 16.5 TYPICAL 16 8±2 V/ L-| - LINEARITY COIL 5.5 WIDTH COIL INDUCTANCE VS CURRENT CURVES FOR LINEARITY COIL ELECTRICAL SPECIFICATION FOR WIDTH COIL INDUCTANCE 8 mH ~38pH D.C.R.

GE SCR Manual

Abstract: DVD CD 5888 GE SCR Manual 6th rpc03 RXB24 N302 613 GB 123 CT dac04 dap0 ES1321
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

GRM155B11C223K

Abstract: RPC03T GRM155B11 GRM32EB31C476K
Contextual Info: Mitsubishi Semiconductors Preliminary MGFS38E2527-01 2.5 - 2.7GHz HBT MMIC MODULE Specifications are subject to change without notice. Outline Drawing DESCRIPTION MGFS38E2527 is a GaAs RF amplifier designed for WiMAX CPE. DIM in mm 1.0 4.0 • • • •

Contextual Info: Mitsubishi Semiconductors MGFS38E2325-01 2.3 - 2.5GHz HBT MMIC MODULE Specifications are subject to change without notice. Outline Drawing DESCRIPTION MGFS38E2325 is a GaAs RF amplifier designed for WiMAX CPE. DIM in mm 1.0 4.0 • • • • • • •

Contextual Info: User’s Manual V850E/MA1 TM 32-Bit Single-Chip Microcontroller Hardware µPD703103 µPD703105 µPD703106 µPD703107 µPD70F3107 Document No. U14359EJ3V0UM00 3rd edition Date Published February 2001 N CP(K) 1999 Printed in Japan [MEMO] 2 User’s Manual U14359EJ3V0UM

Contextual Info: Mitsubishi Semiconductors Preliminary MGFS38E2527-01 2.5 - 2.7GHz HBT MMIC MODULE Specifications are subject to change without notice. Outline Drawing DESCRIPTION MGFS38E2527 is a GaAs RF amplifier designed for WiMAX CPE. DIM in mm 1.0 4.0 • • • •

Contextual Info: RPC0 Radial Power Choke A B D E C INDUCTANCES 1.0 µH to 390 µH SATURATION CURRENT Lowers inductance 10% OPERATING TEMPERATURE - 55°C to +125°C TESTING LCR Bridge at 1kHZ INDUCTANCE TOLERANCE ±10%. MARKING Part number printed on part SLEEVING Coils covered with Poly-Olefin shrink tubing

RD01MUS2

Abstract: rpc03 grm188r11h RD07MVS1B taiyo RPC03 micro electronics
Contextual Info: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-085 Date : 24th April 2007 Prepared : Y. Takase Confirmed : S. Kametani RD01MUS2 & RD07MVS1B RF characteristic data at Vds=7.2V, 400-470 MHz. SUBJECT: SUMMARY: This application note shows the RF Broad band characteristic data Po vs. Frequency