RD01MUS1-101
Abstract: RD01MUS1 c111m RD01MSU1 3M Touch Systems
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.
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rd01mus1520mhzrd01mus1-101c111m+2rd01msu13m touch systems
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GRM1882C1H100JA01D
Abstract: GRM1882C1H grm1882c1h4r0cz01d GRM1882C1H8R0DZ01 GRM1882C1H9R0DZ01D RPC05-182 LQG11A8N2S00 GRM1882C1H150JA01D GRM1882C1H120JA01D GRM1882C1H8R0DZ01D
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-900-040-A Date : 6th Aug. 2009 Rev.date : 30th Jun. 2010 Prepared : K.Ijuin S.Kametani Confirmed : T.Okawa RD01MUS1 & RD07MUS2B 2-Stage amplifier RF performance at SUBJECT: f=763-870MHz,Vdd=7.2V
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an-900-040-ard01mus1rd07mus2b763-870mhz+12086ze-g250magrm1882c1h100ja01dgrm1882c1hgrm1882c1h4r0cz01dgrm1882c1h8r0dz01grm1882c1h9r0dz01drpc05-182lqg11a8n2s00grm1882c1h150ja01dgrm1882c1h120ja01dgrm1882c1h8r0dz01d
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RD01MUS1
Abstract: adj 2576
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-060-A Date : 19th Oct. 2004 Rev.date : 22th June. 2010 Prepared : M.Wada, S.Kametani Confirmed : T.Ohkawa Taking change of Silicon RF By MIYOSHI Electronics SUBJECT: RD01MUS1 RF Characteristics at Vdd=3.6/ 4.5/ 7.2V
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an-uhf-060-ard01mus1135mhz100ma+4527mhz0mm/50an-uhf-060adj 2576
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RD07MVS1
Abstract: RD01MUS1 17mml MITSUBISHI APPLICATION NOTE RF POWER gp 735
Contextual Info: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-006 Date : 21th Aug. 2003 Prepared : M.Wada Confirmed : T.Ohkawa RD07MVS1 & RD01MUS1 RF characteristics data at 800MHz Band. SUBJECT: SUMMARY: This application note show the RF Wide band characteristics data Po vs. Frequency
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an-900-006rd07mvs1rd01mus1800mhz+5031aa764-870mhz17mmlmitsubishi application note rf powergp 735
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transistor 1971 mitsubishi
Abstract: MOS 6520 40 pin marking 4338 sot89 2493 transistor i 2708 9622 transistor MOS 6581 an 17827 MOS marking 843 Mitsubishi 3994
Contextual Info: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELETROSTATIC SENSITIVE DEVICES MITSUBISHI RF POWER MOS FET Revision date:26th/Feb.J02 RD01MUS1 Silicon MOSFET Power Transistor 520MHz,7.2V,lW DESCRIPTION RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.
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rd01mus1520mhz0-48maxot-89+1225degtio750transistor 1971 mitsubishimos 6520 40 pinmarking 4338 sot892493 transistori 27089622 transistormos 6581an 17827mos marking 843mitsubishi 3994
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RD01MUS1
Abstract: RD07MVS1B
Contextual Info: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-028-A Date : 6th July. 2007 Rev.date : 7th Jan. 2010 Prepared : Y.Takase S.Kametani Confirmed : T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD01MUS1 & RD07MVS1B 2-Stage amplifier RF performance f= 740-870MHz.
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an-900-028-ard01mus1rd07mvs1b740-870mhz+1068yd-g
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RD07MVS1
Abstract: RD01MUS1
Contextual Info: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-008 Date : 7th Oct. 2003 Prepared : M.Wada S.Kametani Confirmed : T.Ohkawa RD01MUS1 & RD07MVS1 2Stage amplifier RF characteristics data at 800MHz Band. SUBJECT: SUMMARY: This application note show the RF Wide band characteristics data
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transistor 16933
Contextual Info: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELETROSTATIC SENSITIVE DEVICES Revision date:25th/Nov.’02 MITSUBISHI RF POWER MOS FET RD01MUS1 Silicon MOSFET Power Transistor 520MHz,7.2V,lW DESCRIPTION RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.
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25th/novrd01mus1520mhz25deg+1transistor 16933
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equivalent transistor c 243
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD01MUS1 Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING DESCRIPTION 4.6MAX RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.
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rd01mus1520mhz48max53max+1equivalent transistor c 243
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2779, transistor
Abstract: 1348 transistor RD01MUS1 RD01MSU1 fet 547
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING DESCRIPTION RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.
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rd01mus1520mhz2779, transistor1348 transistor+2rd01msu1fet 547
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RD01MUS1
Abstract: 180PF
Contextual Info: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-019-B Date : 9th Jan. 2003 Rev.date : 7th Jan. 2010 Prepared : T.Akaishi S.Kametani Confirmed : T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD01MUS1 RF characteristics data
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an-uhf-019-brd01mus1022xa136mhz+3155mhz175mhz180pf
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RD01MUS1
Abstract: RD07MVS1 848/b+5891
Contextual Info: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-VHF-013Date : 11th Nov. 2003 Prepared : M.Wada S.Kametani Confirmed : T.Ohkawa RD01MUS1 & RD07MVS1 VHF wide band matching circuit characteristics SUBJECT: SUMMARY: This application note shows the RF characteristics data for VHF wide band Po vs. Frequency
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an-vhf-013daterd01mus1rd07mvs12k291+3031aa135-175mhz848/b+5891
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5139 mosfet
Contextual Info: < Silicon RF Power MOS FET Discrete > RD01MUS1 RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W DESCRIPTION RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. OUTLINE DRAWING 4.4+/-0.1 FEATURES APPLICATION
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rd01mus1520mhzrd01mus1-101oct2011+15139 mosfet
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RD01MUS1-101
Abstract: RD01MSU1 RD01MUS1 transistor 636 mitsubishi epoxi resin fet 547 1351 transistor rd01mus1 applications DD 127 D TRANSISTOR 2779, transistor
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.
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rd01mus1520mhzrd01mus1-101rd01msu1+7transistor 636 mitsubishiepoxi resinfet 5471351 transistorrd01mus1 applicationsdd 127 d transistor2779, transistor
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RD01MUS1
Abstract: D 1556 RD07MVS1
Contextual Info: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-008-A Date : 7th Oct. 2003 Rev.date : 7th Jan. 2010 Prepared : M.Wada S.Kametani Confirmed : T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD01MUS1 & RD07MVS1 2Stage amplifier RF characteristics data at 800MHz Band.
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amp 827 578
Abstract: 2K291 RD01MUS1 RD07MVS1 amp 827 578 3 pin
Contextual Info: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-VHF-013-A Date : 11th Nov. 2003 Rev.date : 7th Jan. 2010 Prepared : M.Wada S.Kametani Confirmed : T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD01MUS1 & RD07MVS1 VHF wide band matching circuit characteristics
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an-vhf-013-ard01mus1rd07mvs12k291+4031aa135-175mhzamp 827 578amp 827 578 3 pin
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RD01MUS1
Abstract: RD07MVS1
Contextual Info: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-006-A Date : 21th Aug. 2003 Rev.date : 7th Jan. 2010 Prepared : M.Wada Confirmed : T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD07MVS1 & RD01MUS1 RF characteristics data at 800MHz Band.
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Contextual Info: < Silicon RF Power MOS FET Discrete > RD01MUS1 RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W DESCRIPTION RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. OUTLINE DRAWING 4.4+/-0.1 FEATURES APPLICATION
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diode gp 429
Abstract: RD01MUS1 RD07MVS1B RD07M RD07MVS AN-900-028
Contextual Info: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-900-028 Date : 6th July. 2007 Prepared : Y.Takase S.Kametani Confirmed SUBJECT: : T.Ohkawa RD01MUS1 & RD07MVS1B 2-Stage amplifier RF performance f= 740-870MHz. SUMMARY: This application note shows the RF Wide band characteristics data
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RD01MUS1
Abstract: micro strip line MITSUBISHI APPLICATION NOTE RF POWER
Contextual Info: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-019 Date : 9th Jan. 2003 Prepared : T.Akaishi S.Kametani Confirmed : T.Ohkawa SUBJECT: RD01MUS1 RF characteristics data SUMMARY: This application note show the RF characteristics Pin vs. Pout characteristics data with
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an-uhf-019rd01mus1022xa136mhz+6155mhz175mhz520mhz0mm/50micro strip linemitsubishi application note rf power
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rd01mus1 applications
Abstract: RD01MUS1-101 3M Touch Systems
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.
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rd01mus1520mhzrd01mus1-101rd01mus1 applications+13m touch systems
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RD01MUS1
Abstract: RD02MUS1 RD30HVF1 ANGEN038 1.5kohm RD07MVS1 RD30HUF1 mitsubishi rf
Contextual Info: MITSUBISHI RF POWER SEMICONDUCTORS APPLICATION NOTE Document NO. AN-GEN-038 Date : 16th Sep. 2003 Prepared : S.Kametani Confirmed : T.Ohkawa Test result of surge tolerance for RD-series SUBJECT: SUMMARY: This application note show the test results of surge tolerance for RD-series.
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marking 7W 66
Abstract: AN-UHF-105 RD07MUS2B transistor jc 817 AN-UHF-116 AN-UHF116 GP 830 diode diode gp 424 AN-900-041
Contextual Info: < Silicon RF Power MOS FET Discrete > RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W OUTLINE DRAWING RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications. 6.0+/-0.15
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rd07mus2b175mhz527mhz870mhz+10vhf/uhf/870mhzoct2011marking 7w 66an-uhf-105transistor jc 817an-uhf-116an-uhf116gp 830 diodediode gp 424an-900-041
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RD07MUS2B
Abstract: RD07MUS2 RD07MUS diode gp 424 RD07M AN-VHF-046 AN-UHF-116 f763 AN-UHF-106 AN-VHF-053
Contextual Info: Silicon RF Power Semiconductors RD07MUS2B ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications.
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rd07mus2b175mhz527mhz870mhz+10vhf/uhf/870mhzrd07mus2rd07musdiode gp 424rd07man-vhf-046an-uhf-116f763an-uhf-106an-vhf-053
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