2302S Search Results

els 2302

Abstract: T01701
Contextual Info: EVERLIGHT ELECTRONICS CO.,LTD. Device Number : CDDS-230-008 REV: 1 Page: 1/5 2.24" Single Digit Displays ELS-2302SRWB PART NO. : ECN : █ Features : █ Applications: ● Industrial standard size. ● Audio equipment ● Low power consumption. ● Instrument panels

Contextual Info: EVERLIGHT ELECTRONICS CO.,LTD. Device Number : CDDS-230-009 REV: 1 Page: 1/5 2.24" Single Digit Displays PART NO. : ELS-2302SURWA/S530-A3 ECN : █ Features : █ Applications: ● Industrial standard size. ● Audio equipment ● Low power consumption. ●

IN941

Abstract: IN944B 1N9411 1N945B JANTX 1N941 1N945B-1 1N945B 1H941B IN941B-1 IN943
Contextual Info: COMPENSATED DEVICES INC BQE D • 2302S54 • 1N941B, 1N943B, IN944B, AND 1N945B AVAILABLE lit JAR, JANTX AND □□□□3S a T TW /W / JANTXV • IN941B-1.1 N943B-I, IN944B-1, AND 1N945B-1 AVAILABLE IN JAN, JANTX AND JANTXV • f t .7 VOLT NOMINAL ZENER VOLTAGE

2302S

Contextual Info: S T S 2302S S amHop Microelectronics C orp. S ep. 3 2005 N-C hannel E nhancement Mode Field E ffect Trans is tor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID 20V 4A R DS ON S uper high dense cell design for low R DS (ON). ( m W ) Max R ugged and reliable.

MARKING 3D regulator

Abstract: Marking b17 DCR250 DCR251 DCR252 DCR253 DCR254 DCR255 DCR256 DCR257
Contextual Info: • CURRENT REGULATOR DIODES DCR250 • CONSTANT CURRENT OVER WIDE VOLTAGE RANGE thru • HIGH SOURCE IMPEDANCE DCR257 • METALLURGICALLY BONDED -1 • DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS Operating Temperature: -65“C to +175°C Storage Temperature: -65°C to +175°C

CDLL4765

Abstract: CDLL4765A CDLL4766 CDLL4766A CDLL4767 CDLL4767A CDLL4768 CDLL4768A CDLL4774A
Contextual Info: •TEMPERATURE COMPENSATED ZENER REFERENCE DIODES CDLL4765 thru • LEADLESS PACKAGE FOR SURFACE MOUNT • 9.1 VOLT NOMINAL ZENER VOLTAGE + 5°o CDLL4774A • LOW CURRENT OPERATING RANGE: 0.5 and 1.0 mA • METALLURGICALLY BONDED -1 - DOUBLE PLUG CONSTRUCTION

GRM1882C1H100JA01D

Abstract: GRM1882C1H grm1882c1h4r0cz01d GRM1882C1H8R0DZ01 GRM1882C1H9R0DZ01D RPC05-182 LQG11A8N2S00 GRM1882C1H150JA01D GRM1882C1H120JA01D GRM1882C1H8R0DZ01D
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-900-040-A Date : 6th Aug. 2009 Rev.date : 30th Jun. 2010 Prepared : K.Ijuin S.Kametani Confirmed : T.Okawa RD01MUS1 & RD07MUS2B 2-Stage amplifier RF performance at SUBJECT: f=763-870MHz,Vdd=7.2V

RD07MUS2B

Abstract: RPC10T Single-Stage amplifier GRM2162C1H101GD01E 2306C 135-175MHz GRM2162C1H200GD01E GRM2162C1H220GD01E GRM2162C1H430GD01E GRM2162C1H560GD01E
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-VHF-047-A Date : 15th Sep. ‘09 Rev. date : 22 th Jun. 2010 Prepared : Y.Takase S.Kametani Confirmed SUBJECT: :T.Okawa RD07MUS2B single-stage amplifier RF performance at f=135-175 MHz,Vdd=7.2V

MK2302S-01

Contextual Info: 2302S-01 Multiplier and Zero Delay Buffer Description Features The 2302S-01is a high performance Zero Delay Buffer ZDB which integrates ICS’ proprietary analog/digital Phase Locked Loop (PLL) techniques. The chip is part of ICS’ ClockBlocksTM family and was

Contextual Info: • 1N935B, 1N937B. 1N938B, AND 1N939B AVAILABLE IN JAN, JANTX AND JANTXV • 1N935B-1.1N937B-1.1N938B-1. AND 1N939B-1 AVAILABLE IN JAN. JANTX AND JANTXV 1N935 thru 1N939B and 1N935B-1 thru 1N939B-1 • 9.0 VOLT NOMINAL ZENER VOLTAGE •TEMPERATURE COMPENSATED ZENER REFERENCE DIODES

CD5818

Abstract: 1N5819 CD1A20 CD1A30 CD1A40 CD1A50 CD1A70 CD5817 CD5819
Contextual Info: • 1N5819 AVAILABLE IN JAN “C” • 1 AMP SCHOTTKY BARRIER RECTIFIER CHIPS • SILICON DIOXIDE PASSIVATED • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES CD5817 thru CD5819 and CD1A20 thru CD1A70 MAXIMUM RATINGS Operating Temperature: -55°C to +125°C

GRM2162C1H180JZ01D

Abstract: RD07MUS2B GRM2162C1H101JA01D GRM2162C1H120JZ01D Single-Stage amplifier GRM2162C1H270JZ01D GRM2162C1H300JZ01D GRM2162C1H560JZ01D murata 897 Mhz AN-UHF-105-A
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-105-A Date : 22th Dec. 2009 Rev. Date :22th Jun. 2010 Prepared : Y.Takase S.Kametani Confirmed :T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD07MUS2B TETRA single-stage amplifier at f=380-430MHz,Vdd=7.2V

Contextual Info: 2302S-01 Multiplier and Zero Delay Buffer Description Features The 2302S-01 is a high performance Zero Delay Buffer ZDB which integrates ICS’ proprietary analog/digital Phase Locked Loop (PLL) techniques. The chip is part of ICS’ ClockBlocksTM family and was

Contextual Info: • 1N6702US AVAILABLE IN JAN.JANTX AND JANTXV 1N6700US thru 1N6702US and CDLL6700 thru CDLL6702US and CDLL5A20 thru CDLL5A40 • 5 AMP SCHOTTKY BARRIER RECTIFIERS • HERMETICALLY SEALED • LEADLESS PACKAGE FOR SURFACE MOUNT • METALLURGICALLY BONDED. DOUBLE PLUG CONSTRUCTION

1N5822US

Abstract: CDLL3A20 CDLL3A40 CDLL5820 CDLL5822 1N5822US JANTXV
Contextual Info: • 1N5822US AVAILABLE iN JAN. JANTX. JANTXV AND JANS • 3 AMP SCHOTTKY BARRIER RECTIFIERS • HERMETICALLY SEALED • LEADLESS PACKAGE FOR SURFACE MOUNT 1N5822US and CDLL5820 thru CDLL5822 and CDLL3A20 thru CDLL3A40 • METALLURGICALLY BONDED. DOUBLE PLUG CONSTRUCTION

CDLL3016

Abstract: CDLL3016B CDLL3017B CDLL3018B CDLL3019B CDLL3020B CDLL3021B CDLL3022B CDLL3023B CDLL3045B
Contextual Info: COMPENSATED DEVICES INC bBE D 2302554 0000505 21b « C D I CDLL3016 • 1 WATT ZENER DIODES thru • LEADLESS PACKAGE FOR SURFACE MOUNT CDLL3045B • DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS O peratin g Tem perature: —6 5 ° C to + 2 0 0 ° C Storage Tem perature: —6 5 ° C to + 2 0 0 ° C

Contextual Info: • CURRENT REGULATOR DIODES DCR250 • CONSTANT CURRENT OVER WIDE VOLTAGE RANGE thru •H IG H SOURCE IMPEDANCE DCR257 • METALLURGICALLY BONDED -1 • DOUBLE PLUG CONSTRUCTION T ) MAXIMUM RATINGS 210? î î i 'b nu Operating Temperature: -65“C to +175°C

2249A

Abstract: flat screen tv circuit diagram XF MR 50hz trans mc2249a
Contextual Info: F A I R C H I L D s e m ic o n d u c t o r w w w .fa ir c h ild s e m i.c o m tm TMC2302 Image Manipulation Sequencer 40 M H z Features Applications • Asynchronous loading o f control parameters • Rapid 25ns per pixel rotation, warping, panning, and

GRM1882C1H5R0CZ01D

Abstract: GRM1882C1H101JA01D GRM188R11H102KA01D capasitor 6.5v .14 f RPC05-101J GRM1882C1H5R0C grm188r11h RD02MUS1B GRM1882C1H150JA01D RPC05-0R0
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-111 Date : 18th Aug. 2010 Prepared : K.Osaki, Y.Tanaka Confirmed : S.Kametani Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD00HVS1 & RD02MUS1B 2-stage amplifier RF performance at f=400-470MHz, Vdd=7.2/6.5V

GRM1882C1H330JA01D

Abstract: GRM1882C1H101JA01D GRM1882C1H470JA01D RD02MUS1B GRM1882C1H120DZ01D GRM1882C1H301JA01D rd02mus1
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-108-A Date : 3th Jun. 2010 Rev. Date :22th Jun. 2010 Prepared : H.Ukita, K.Osaki Y.Tanaka Confirmed : S.Kametani Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD02MUS1B single-stage amplifier RF performance at f=400 to 470MHz, Vdd=7.2V.

RD07MUS2B

Abstract: GRM2162C1H120GD01E Single-Stage amplifier GRM2162C1H101GD01E GRM2162C1H290GD01E GRM2162C1H540GD01E GRM2162C1H8R0DD01E AN-UHF-098-B gp 219 GP 743
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-098-B Date : 15th Sep. 2009 Rev. Date :22th Jun. 2010 Prepared : Y.Takase S.Kametani Confirmed :T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD07MUS2B single-stage amplifier

350-400MHZ

Abstract: GRM2162C1H220JZ01D murata 371 Single-Stage amplifier GRM2162C1H101JA01D GRM2162C1H120JZ01D GRM2162C1H240JZ01D GRM2162C1H270JZ01D GRM2162C1H300JZ01D GRM2162C1H560JZ01D
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-106-A Date : 16th Feb. 2010 Rev. Date :22th Jun. 2010 Prepared : Y.Takase S.Kametani Confirmed :T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD07MUS2B TETRA single-stage amplifier at f=350-400MHz,Vdd=7.2V

CD4689

Abstract: CD4684 1N4678 1N4717 CD4678 CD4679 CD4681 CD4685 CD4717
Contextual Info: CD4678 • ZENER DIODE CHIPS • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE thru CD4717 • ELECTRICALLY EQUIVALENT TO 1N4678 THRU 1N4717 • 50/jA, LOW OPERATING CURRENT, ZENER DIODES • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES

Contextual Info: 2302S-01 Multiplier and Zero Delay Buffer Description Features The 2302S-01 is a high performance Zero Delay Buffer ZDB which integrates ICS’ proprietary analog/digital Phase Locked Loop (PLL) techniques. The chip is part of ICS’ ClockBlocksTM family and was