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Contextual Info: < Silicon RF Power MOS FET Discrete > RD10MMS2 RoHS Compliance, Silicon MOSFET Power Transistor,870MHz,10W OUTLINEDRAWING DESCRIPTION RD10MMS2 RoHS-compliant product is a MOS FET type transistor specifically designed for 870MHz RF power amplifiers applications.
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GRM2162C1H101JA01D
Abstract: H1002 Single-Stage amplifier GRM2162C1H120JZ01D GRM2162C1H160JZ01D GRM2162C1H300JZ01D GRM2162C1H560JZ01D GRM2162C1H8R0DZ01D GRM216R11H223KA01E RD07MUS2B
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-900-041-A Date : 8th Mar. ‘10 Rev.date : 30th Jun. 2010 Prepared : K.IJUIN S.Kametani Confirmed SUBJECT: :T.Okawa RD07MUS2B TETRA single-stage amplifier at f=800-870MHz,Vdd=3.6V SUMMARY: This application note shows the TETRA data .
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an-900-041-ard07mus2b800-870mhz086ze-g+14800mhz820mhz840mhz860mhz870mhzgrm2162c1h101ja01dh1002single-stage amplifiergrm2162c1h120jz01dgrm2162c1h160jz01dgrm2162c1h300jz01dgrm2162c1h560jz01dgrm2162c1h8r0dz01dgrm216r11h223ka01e
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GRM2162C1H180JZ01D
Abstract: RD07MUS2B GRM2162C1H101JA01D GRM2162C1H120JZ01D Single-Stage amplifier GRM2162C1H270JZ01D GRM2162C1H300JZ01D GRM2162C1H560JZ01D murata 897 Mhz AN-UHF-105-A
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-105-A Date : 22th Dec. 2009 Rev. Date :22th Jun. 2010 Prepared : Y.Takase S.Kametani Confirmed :T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD07MUS2B TETRA single-stage amplifier at f=380-430MHz,Vdd=7.2V
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an-uhf-105-ard07mus2b380-430mhz086ze-g+13380mhz405mhz430mhz250ma18kspsgrm2162c1h180jz01dgrm2162c1h101ja01dgrm2162c1h120jz01dsingle-stage amplifiergrm2162c1h270jz01dgrm2162c1h300jz01dgrm2162c1h560jz01dmurata 897 mhz
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350-400MHZ
Abstract: GRM2162C1H220JZ01D murata 371 Single-Stage amplifier GRM2162C1H101JA01D GRM2162C1H120JZ01D GRM2162C1H240JZ01D GRM2162C1H270JZ01D GRM2162C1H300JZ01D GRM2162C1H560JZ01D
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-106-A Date : 16th Feb. 2010 Rev. Date :22th Jun. 2010 Prepared : Y.Takase S.Kametani Confirmed :T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD07MUS2B TETRA single-stage amplifier at f=350-400MHz,Vdd=7.2V
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an-uhf-106-ard07mus2b350-400mhz08xxa-g+14350mhz375mhz400mhz250ma18kspsgrm2162c1h220jz01dmurata 371single-stage amplifiergrm2162c1h101ja01dgrm2162c1h120jz01dgrm2162c1h240jz01dgrm2162c1h270jz01dgrm2162c1h300jz01dgrm2162c1h560jz01d
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