RD07MVS1
Abstract: RD07MVS1-101 T112 07MVS1 3080D RD07MVS Rd07mvs1101
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION 07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 07MVS1 is a MOS FET type transistor
|
Original
|
rd07mvs1175mhz520mhzrd07mvs1-101+5t11207mvs13080drd07mvsrd07mvs1101
|
PDF
|
diode gp 434
Abstract: RD07MVS1 RD07MVS2 T112 07MVS1 PO520 zener gp 434
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS2 RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 2.0+/-0.05 2 INDEX MARK Gate For output stage of high power amplifiers In VHF/UHF band mobile radio sets.
|
Original
|
rd07mvs2175mhz520mhzrd07mvs2-101+6diode gp 434rd07mvs1t11207mvs1po520zener gp 434
|
PDF
|