TP0604 Search Results

TP0604

Contextual Info: TP0604 P-Channel Enhancement-Mode Vertical DMOS FET Features ► ► ► ► ► ► ► ► General Description Low threshold -2.4V max. High input impedance Low input capacitance (95pF typical) Fast switching speeds Low on-resistance Free from secondary breakdown

SOW-20

Abstract: TP0604 TP0604N3 TP0604WG low vgs mosfet to-92
Contextual Info: TP0604 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) VGS(th) (max) -40V 2.0Ω -2.0A -2.4V Order Number / Package TO-92 SOW-20* TP0604N3 TP0604WG * Same as SO-20 with 300 mil wide body.

SOW-20

Contextual Info: TP0604WG LJì Supertex inc. S u rfa ce M o un t L ow T h r e s h o ld P-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information_ B V */ R ds <o n M a x Order Number / Package 2 .0 Q TP0604W G SOW-20* V DGS -4 0V * Same as SO-20 with 300 mil wide body.

Contextual Info: TP0604 Supertex inc. Low Threshold P-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information BV dss / R ds on Max Order Num ber / Package SOW -20* b v dgs -40V 2.0Î2 TP0604W G * Same as S0-20 with 300 mil wide body. Features Advanced DMOS Technology

TP0604

Contextual Info: Supertex inc. TP0604 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 55 55 11 ± 1.5 Au 1 (mils) TP0604 1 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si Bonding Pad Description

tp0604

Contextual Info: TP0604 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

SOW-20

Abstract: TP0604WG
Contextual Info: TP0604WG Low Threshold P-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information BVDSS / BVDGS RDS ON Max -40V 2.0Ω Order Number / Package SOW-20* TP0604WG * Same as SO-20 with 300 mil wide body. Advanced DMOS Technology Features 4 independent channels

SITP

Abstract: TP0604 TP0604N3 SOW MARKING
Contextual Info: TP0604 P-Channel Enhancement-Mode Vertical DMOS FET Features ► ► ► ► ► ► ► General Description Low threshold -2.4V max. High input impedance Low input capacitance (95pF typical) Fast switching speeds Low on-resistance Free from secondary breakdown

Contextual Info: ^ Super t e x inc. TP0604WG Low Threshold P-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information BVDSS/ BV RDS ON Max Order Number / Package SOW-20* dgs -40V 2.0£2 TP0604WG * Sam e as S O-20 with 300 mil wide body. Features Advanced DMOS Technology

SOW-20

Abstract: TP0604 TP0604WG
Contextual Info: TP0604 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information BVDSS / BVDGS RDS ON Max -40V 2.0Ω Order Number / Package SOW-20* TP0604WG * Same as SO-20 with 300 mil wide body. Advanced DMOS Technology Features 4 independent channels

SOW-20

Abstract: TP0604 TP0604WG
Contextual Info: TP0604 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information BVDSS / BVDGS RDS ON Max -40V 2.0Ω Order Number / Package SOW-20* TP0604WG * Same as SO-20 with 300 mil wide body. Advanced DMOS Technology Features 4 independent channels

Contextual Info: TP0604N2 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)40 V(BR)GSS (V)20 I(D) Max. (A)2.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)4.8 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)6.0 Minimum Operating Temp (øC)-55

LS 7112

Contextual Info: TP0602 TP0604 S u p ertex inc. Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BV0SS/ R d S ON b v dgs (max) (min) (max) TO-39 TO-92 SOW-20* Die+ -20V 2.0£i -2.0A -2.4V TP0602N2 TP0602N3 — TP0602ND

TP0604

Contextual Info: Supertex inc. TP0604 P-Channel Enhancement-Mode Vertical DMOS FET Features ► ► ► ► ► ► ► General Description Low threshold -2.4V max. High input impedance Low input capacitance (95pF typical) Fast switching speeds Low on-resistance Free from secondary breakdown

TP0604N2

Abstract: TP0602N3 TP0602N2 TP0602 TP0604 p-channel DMOS Switching Silicon Power P-channel Fast Data Book TP0604N3 TP0604WG SOW-20
Contextual Info: TP0602 TP0604 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) VGS(th) (max) TO-39 TO-92 SOW-20* DICE† -20V 2.0Ω -2.0A -2.4V TP0602N2 TP0602N3 — TP0602ND

SOW-20

Abstract: TP0604WG
Contextual Info: TP0604WG Low Threshold P-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information BVDSS / BVDGS RDS ON Max -40V 2.0Ω Order Number / Package SOW-20* TP0604WG * Same as SO-20 with 300 mil wide body. Features Advanced DMOS Technology ❏ 4 independent channels

TP0602N3

Abstract: TP0602N2 SOW-20 TP0602 TP0602ND TP0604 TP0604N3 TP0604ND TP0604WG
Contextual Info: TP0602 TP0604 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) VGS(th) (max) TO-39 TO-92 SOW-20* Die† -20V 2.0Ω -2.0A -2.4V TP0602N2 TP0602N3 — TP0602ND -40V

TP0604

Contextual Info: TP0604 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 55 55 11 ± 1.5 Au 1 (mils) TP0604 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si

Contextual Info: Supertex inc. TP0604 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold -2.4V max. High input impedance Low input capacitance (95pF typical) Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage

Contextual Info: TP0604N3 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)40 V(BR)GSS (V)20 I(D) Max. (A)750m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)4.2 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)1.0 Minimum Operating Temp (øC)-55

Contextual Info: TP0604WG Transistors P-Channel Enhancement Mode MOSFET Array Military/High-RelN V BR DSS (V)40 V(BR)GSS (V)20 I(D) Max. (A) I(DM) Max. (A) Pulsed I(D)600m @Temp (øC)150# IDM Max (@25øC Amb)2.0 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)1.5#

VP1304N2

Abstract: TP2540ND VN1304N3 VP3203N3 LND150N8 VN3205N5 VN1310N3 TN2510N8 TN0102N2 VP1306N2
Contextual Info: _ _ fflpSupertex inc. Device Page # Device Page # Device A lp h a n u m e ric Index Page # Device Page# 2N7002 BSS123 DN2535N2 DN2535N3 DN2535N5 20 24 28 28 28 TN2106K1 TN2106N3 TN2124K1 TN2501N8 TN2501ND 57 57 61 63 63 TP2504ND TP2506ND TP2510N8 TP2510ND

Contextual Info: TC0604 Supertex inc. Low Threshold Complementary Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information_ BV DSS/ R d s o n M a x b v dgs Q 1 + Q 2 or Q 3 + Order Number / Package SOW -20* 3.0Q 40V TC0604WG * Same as S 0-20 with 300 mil wide body.

Backlight Drivers

Abstract: P271 tp0610 TN2105 HV9123 Ring generator HV9112 LCD shutter
Contextual Info: Market Solutions Listing Telecom/Networking Solutions Hotswap/lnrush Current Limiter/Circuit Breaker ICs HV300/HV310 HV301/HV311 HV302/HV312 HV100/HV101 Off-Line Bias Supplies, High Voltage Linear Regulators LR6 LR7 SR036 SR037 LR8 HV9904 AC/DC, DC/DC Converters PWM ICs