T072 Search Results

BF178

Abstract: bf179 BFT79 BF177 2N2219 2N2905 bf338 BFQ36 BC325 2N3571 2N3572
Contextual Info: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *Tt i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450

F13S

Abstract: BFQ35 BC177 pnp transistor transistor bc303 transistor t05 BF179 2n3440 equivalent bc304 equivalent bc143 equivalent 2N3570
Contextual Info: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *Tt i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450

C495 transistor

Abstract: c735 2N1893 equivalent c644 C735 O 2N2222 hfe C749 2N3570 transistor C633 NPN C460
Contextual Info: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *T t i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450

Contextual Info: Model T0727J5012AHF Rev A Ultra Low Profile 0805 Impedance Transformer 50Ω to 12.5Ω Description The T0727J5012AHF is a low cost, low profile sub-miniature impedance transformer in an easy to use surface mount package. With smaller footprint, this single component replaces the conventional discrete component matching network

cny18

Contextual Info: T em ic CNY18 TELEFUNKEN Semiconductors Optocoupler with Phototransistor Output Description The CNY18 consists of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a hermetically sealed 4 lead T072 metal can package for high reliability requirements.

C736

Abstract: C495 transistor bc303 equivalent 2N2222A 026 C735 bc143 equivalent bc143 C644 equivalent transistor 2N1711 transistor c633
Contextual Info: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *Tt i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450

3N225

Abstract: BF805 3N201 3N211 BF802 3N202 BF806 BF800 3N204 3N205
Contextual Info: mTexas In s tru m e n ts FET's For V H F A m p lifie rs and M ix e rs Type No. Case I g s s Vp Ciss Crss Pol max. max max. max. nA V pF 2N3823 T072 N 0.5 8 6 2N4416 T072 2N4416A T072 N N 0.1 0.1 6 6 4 4 0.8 0.8 4000 400 4000 10 2 N5549 N 0.25 6 8 2 6000 T018

Contextual Info: Model T0727J5012AHF Rev B Ultra Low Profile 0805 Impedance Transformer 50Ω to 12.5Ω Description The T0727J5012AHF is a low cost, low profile sub-miniature impedance transformer in an easy to use surface mount package. With smaller footprint, this single component replaces the conventional discrete

BFR80

Abstract: BFR79 BFR81 BFT69 BFW32 700M BFQ37 BFQ38S BFR38 BFR52
Contextual Info: SEHELAB LTD 37E D • 6133157 DQQ0D5Q b « S U L B ~T~ 3 3 -Of , I •i Type No. Option''17 Polarlly Packa9 e v CEO hF E @ VC e / ' c fT PD PNP PNP PNP NPN PNP T039 T039 T072 T092 T092 300 250 35 20 80 0.2 1 20m 1 1 30-300 25min 25min 60min 50min 5 /10m 5 /50m

2369

Abstract: T018 T072 PN2368 NKT13329 13429 16229
Contextual Info: NPN Silicon Transistors N P N S ilic o n Planar T ransistors fo r high speed sw itching and high fre q u e n cy use Type M a x im u m ratings Case BSY 95A T018 T018 T018 T018 N K T 13329 N K T 13429 N K T 16229 PN 918 PN 2368 PN 2369 T018 T018 T072 Plastic T 0 1 8

Contextual Info: pmV MS HADE IN THIRD AH6LE PROJECTION HIS DRAUIHÛ 13 UNPUBLISHED. I RELE ftEVtSlûNS REV g REDWN, ECN BD3361 A HOUB1NG. A QQ-B-750j 5KELLi CARBON STEEL PER A5TM A109j SCREWLOCK. ZINC; GOLD PLATING PER MIL-G-45204, TIN PLATING PER M ]L-T-T0727, NICKEL PLATING PER QQ-N-290, COPPER PLATING PER MIL-C-14550.

K120P

Contextual Info: Tem ic K120P Semiconductors Optocoupler with Phototransistor Output Description The K 120P consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a hermetically sealed 4-lead T072 metal can package for high reliability requirements.

Contextual Info: Tem ic Semiconductors # SOT23 TO 18 2 lead T018 (3 lead) ^ TOS2 T072 TO92 (2 lead) ^ T092(31ead) JFETs - N-Channel JFET Analog Switches Break­ down Voltage Mm i \ i “ VS i f .5 » . ¡ i f * , • fe ’ (Q> Min \b x Min J 105 3 ^ .5 -10 500 -20 J106

Contextual Info: Request a Quote | Ask an Engineer Image description. Print this Sheet End of image description. Image description. as PDF EndSave of image description. DCF1300-T0720 7.8 GHz to 8.5 GHz DCF Drop-in ISOLATORS & CIRCULATORS Specifications RF Frequency Isolation

germanium af transistors

Abstract: OC171 OC170 AF126 AF124 germanium transistors PNP AF114 AF127 AF125 603F
Contextual Info: PNP Germanium Transistors PNP Germanium V H F Diffused Transistors in T 0 7 and T 0 7 2 metal cases Type C h aracte ristics @ 2 5 ° C M a x im u m ratings Cai se V BV£B O V 'c m mA b v cbo 114 115 116 117 124 125 126 127 T07 T07 TO 7 T072 T072 T072 T072

2N4252

Abstract: 2N3570 2N3571 pnp hfe 70 BFT69 2N3572 048J 2N3571 NPN bc143 2N918
Contextual Info: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *T t i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450

DNF1300-T0720

Abstract: T072
Contextual Info: DNF Drop-in Isolators & Circulators DNF1300-T0720 7.8GHz to 8.501GHz Specifications RF Frequency Isolation Insertion Loss VSWR Peak Power Average Power Package Size Environmental Notes Specifications subject to change without notice Mica Microwave | Manteca, CA | 1-209-825-3977 | www.Mica-MW.com

DCF1300-T0720

Contextual Info: DCF Drop-in Isolators & Circulators DCF1300-T0720 7.8GHz to 8.5GHz Specifications RF Frequency Isolation Insertion Loss VSWR Peak Power Average Power Power Forward Power Reverse Package Size 7.8GHz to 8.5GHz 20 dB min 0.4 dB (max) 1.25:1 100 Watts (max)

DCF1300-T0720

Contextual Info: DCF Drop-in Isolators & Circulators DCF1300-T0720 7.8 GHz to 8.5 GHz Specifications RF Frequency Isolation Insertion Loss VSWR Peak Power Average Power Power Forward Power Reverse Package Size 7.8 GHz to 8.5 GHz 20 dB min 0.4 dB (max) 1.25:1 100 Watts (max)

TL072CP PIN DIAGRAM

Abstract: equivalent tl072cp TL074MJ tl071 datasheet tl072 equivalent TL072MJG TL071 PIN DIAGRAM TL074 TL074M TL071A
Contextual Info: TL071, TL071A, TL071B, TL072 TL072A, TL072B, TL074, TL074A, TL074B LOWĆNOISE JFETĆINPUT OPERATIONAL AMPLIFIERS SLOS080G − SEPTEMBER 1978 − REVISED SEPTEMBER 2003 D Low Power Consumption D Wide Common-Mode and Differential Voltage Ranges D Low Input Bias and Offset Currents

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

TIL120

Abstract: MS3152
Contextual Info: T IL I 20, TIL121 OPTOCOUPLERS □ 1956, N O V E M B E R 1974 G A LLIU M ARSENIDE DIO DE IN F R A R E D SOURCE O PTIC A LLY COUPLED TO A HIG H -G A IN N-P-N SILICON PHOTOTRANSISTOR • Photon Coupling for Isolator Applications • High Overall Current Gain . . . 1.0 Typ TIL 121

IS TL071

Abstract: tl072 die TL074M
Contextual Info: TL071, TL071A, TL071B, TL072 TL072A, TL072B, TL074, TL074A, TL074B LOW-NOISE JFET-INPUT OPERATIONAL AMPLIFIERS SLOS080J − SEPTEMBER 1978 − REVISED MARCH 2005 D Low Power Consumption D Wide Common-Mode and Differential Voltage Ranges D Low Input Bias and Offset Currents

t310m

Abstract: T064M TB0720M GR-1089-CORE J-STD-020A TB0640M TB0900M TB3500M
Contextual Info: TB0640M - TB3500M 50A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE UNDER DEVELOPMENT • · · · · · 50A Peak Pulse Current @ 10/1000ms 250A Peak Pulse Current @ 8/20ms 58 - 320V Stand-Off Voltages Oxide-Glass Passivated Junction Bi-Directional Protection In a Single Device