2369 Search Results

J 2N2369

Abstract: 2N2369
Contextual Info: 2369 HIGH-FREQUENCY SATURATED SWITCH The 2N 2369 is a silicon planar epitaxial NPN transistor in Jedec T O -1 8 metal case. It is designed specifically fo r high-speed saturated switching applications at current levels from 100 juA to 100 mA. ABSOLUTE MAXIMUM RATINGS

2369 transistor

Abstract: 2369
Contextual Info: 2N 2369 SILICON PLANAR NPN HIG H-FREQUENCY SATURATED SWITCH Th e 2 N 2 3 6 9 is a sil con p lanar ep ita x ia l N P N tran sistor in Jedec T O - 1 8 m etal case. It is designed sp ecifically to r high-speed saturated sw itch ing ap p lic atio n s a t c u rre n t levels fro m

N2369

Abstract: 2N4260 2N2368 2N3546 2N2369A 2N3227 2N4261 2N706 2N708 2N869A
Contextual Info: TO-18 T R A N S IS T O R S F A S T S P E E D SW IT C H NPN Device Type 2N706 2N708 2N914 2N2368 2N 2369 2 N 2369A 2N3227 BSX90 2N4260 2N4261 lc max. mA Polarity v C EO , VcER<+> (Volts) NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN 20 (+ ) 15 15 15 15 15 20 12

2222 NPN

Abstract: 2222a NPN 2n h 2222a 2222a 2221A npn 2907A 2N708 2N709 2N753 2369A
Contextual Info: JEDEC TRANSISTORS 2N 706 2N 706A 2N708 2N709 2N 709A 2N 722 2N 743 2N 744 2N753 2N 834 2N 834A 2N 869A 2N 914 2N 995 2N 2205 2N 2218 2N 2218A 2N 2219 2N 2219A 2N 2221 2N 2221A 2N 2222 2N 2222A 2N 2368 2N 2369 2N 2369A 2N 2475 2N 2894 2N 2904 2N 2904A 2N 2905

Contextual Info: M39003/01-2369 aka M39003/01-2369 T212B475M050MS CSR13G475MM Capacitor, tantalum, 4.7 uF, +/-20% Tol, 50V@85C Dimensions mm Specifications ID Dimension Tolerance D L1 L2 F LL 4.7 12.04 15.49 0.51 38.1 +/-0.25 +/-0.79 +0 +/-0.05 +/-6.35 Manufacturer: Value:

BSV52

Abstract: 2369A SO2369 SO2369A SOT23 BSV52 n11 sot 65 so2369 n11 807g ic ua 413
Contextual Info: BSV52 2369/2369A SMALL SIGNAL NPN TRANSISTORS • ■ ■ Type Marking BSV52 B2 2369 N11 SO 2369A N81 SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS LOW CURRENT, FAST SWITCHING APPLICATIONS.

MD2369

Abstract: MD2369AB MD2369B transistor k84 MD2369A MD2369AF MD2369BF MD2369F MQ2369
Contextual Info: M D 2 3 6 9 , A , B s il ic o n M D 2 3 6 9 F , A F , BF M Q 2369 M ULTIPLE SILICON ANNULAR TRANSISTORS NPN SILICON M ULTIPLE TRANSISTORS . . . designed for use as differential am plifiers, dual general-purpose switches and am plifiers, fro n t end detectors, and temperature com­

2SC763

Abstract: I342 2SC3098 2sc2381 2sc3602 2376 HITACHI 2SD1812 2SC1047 2SC2284A-KA 2SC2284
Contextual Info: - 136 - m £ M anuf. 2SC 2344 2SC 2345 2SC 2347 4 2SC 2348 2SC 2349 ^ 2SC 2350 oor* o-sci _ J 2SC 2 3 5 3 yt 2SC 2352 = # 3K 2 3£ 2 X 2 S 2 a m. □ æ *±a tö T «5 T 2SC 2362 H # 2SC 2362K = # H & 2SC 2363 2SC 2365 i / 2SC 2368 2SC 2369 2SC 2370 2SC 2371 ^

2n2369

Abstract: 2N2368 2369 2n 2368 2n 2369 2368
Contextual Info: * 2 N 2368 * 2 N 2369 NPN S IL IC O N T R A N S IS T O R S , E P IT A X IA L T R A N S IS T O R S N P N S IL IC IU M , E P IT A X IA U X îfc Preferred device D ispositif recommandé - H F small signal amplification Amplification H F petits signaux Low current fast switching

Contextual Info: This document was generated on 02/25/2013 PLEASE CHECK WWW.MOLEX.COM FOR LATEST PART INFORMATION Part Number: Status: Overview: Description: 22-28-2369 Active SPOX 2.54mm Pitch KK Header, Breakaway, Right Angle, with Plastic Polarizing Peg, 36 Circuits, 0.76µm Gold Au Selective Plating, with Backwalls Removed

Contextual Info: REVISION RECORD EC O 23694 DATE REV 2-22 « NC POSIIROMC IN DU SIRES BEUEVES THE DATA ON T H S DRAWNO TO B E RELIABLE. SINCE THE TECHMCAL INFORMATION IS OMEN FREE OF CHARGE, THE USER EMPLOYS SUCH MFORMAHON AT H B OHM MSCREJION AND RISK. POSnROMC MDUSTRES ASSUMES NO

KTN2369

Abstract: KTN2369A
Contextual Info: SEMICONDUCTOR TECHNICAL DATA 2369/A EPITAXIAL PLANAR NPN TRANSISTOR HIGH SPEED SWITCHING APPLICATION. FEATURES • High Frequency Characteristics : fT=500MHz Min. (VCE=10V, f=100MHz, Ic=10mA). • Excellent Switching Characteristics. • 2369/2369A Electrically Similar to 2369/2369A.

2369A

Abstract: 2N2369 2N2369 datasheet 2N2369 transistor J 2N2369 2N2369A 100MHz-500MHz
Contextual Info: 2369, 2369A High Speed Switching Transistors Features: • NPN Silicon Planar Epitaxial Transistors. • Fast switching devices exhibiting short turn-off and low saturation voltage characteristics. • 2369/A are NPN Silicon High Speed Saturated Switching, Transistors With Low Power

2369

Abstract: T018 T072 PN2368 NKT13329 13429 16229
Contextual Info: NPN Silicon Transistors N P N S ilic o n Planar T ransistors fo r high speed sw itching and high fre q u e n cy use Type M a x im u m ratings Case BSY 95A T018 T018 T018 T018 N K T 13329 N K T 13429 N K T 16229 PN 918 PN 2368 PN 2369 T018 T018 T072 Plastic T 0 1 8

2369A

Abstract: KTH2369A
Contextual Info: SEMICONDUCTOR 2369A MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking 2. Marking KTH 1 2369A 316 3 No. Item Device Name Lot No. 2003. 10. 21 Revision No : 0 2 Marking Description KTH Series Name 2369A Device Name 316 3 Year 0~9 : 2000~2009

TT 2222 npn

Abstract: 709a 2N709 2n h 2222a 2N698 2N708 2N753 2222 NPN
Contextual Info: à Si a. UJ >° 0Hi >U aLU £ oc 2N 706 2N 706A 2N708 2N709 2N 709A 2N 722 2N 743 2N 744 2N753 2N 834 2N 834A 2N 869A 2N 914 2N 995 2N 2205 2N 2218 2N 2218A 2N 2219 2N 2219A 2N 2221 2N 2221A 2N 2222 2N 2222A 2N 2368 2N 2369 2N 2369A 2N 2475 2N 2894 2N 2904

KTN2369AS

Abstract: KTN2369S HIGH SPEED SWITCHING NPN SOT23
Contextual Info: SEMICONDUCTOR TECHNICAL DATA K TN 2369S/A S EPITAXIAL PLANAR NPN TRANSISTOR HIGH SPEED SWITCHING APPLICATION. FEATURES • Excellent High Frequency Characteristics. • Excellent Switching Characteristics. A MILLIMETERS 2.93+0.20 B 1.30+0.20/—0.15 C D 1.30 MAX

MPQ2369

Contextual Info: Data Sheet Central Sem iconductor Corp. m _ _ b t m MPQ.2369 NPN S IL IC O N QUAD TRANSISTOR 145 Adams Ave., Hauppauge, NY 11788 USA Phone 516 435-1110 FAX (516) 435-1824 JEDEC T O - 116 CASE Manufacturers of World Class Discrete Semiconductors

3802U

Abstract: MAX3802 MAX3802EVKIT MAX3802UGK
Contextual Info: 19-2369; Rev 0; 4/02 MAX3802 Evaluation Kit The MAX3802 evaluation kit EV kit is an assembled demonstration board that provides easy evaluation of the MAX3802 quad adaptive equalizer with cable drivers. SMA connectors with 50Ω controlled-impedance transmission lines to the MAX3802 are provided for all

2369

Abstract: KTN2369
Contextual Info: SEMICONDUCTOR 2369 MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking 2. Marking KTN 2369 816 No. Item 1 2 3 98.06.23 Marking Description KTN Series Name 2369 Device Name Device Name Lot No. Revision No : 8 Year 0 ~ 9 : 1900~1999 16 Week

Contextual Info: Transistors SOT23 B SOT23 Case NPN miniReel a » miniBag Order Order Number Number l ^ 7 } Type 500 pcs. ^ 100 pcs. 0 NPN General Purpose 2369 73-2369 53-2369 BC818-16 73-8181 53-8181 BC818-25 73-8182 53-8182 BC818-40 73-8183 53-8183 BC848A 73-8481 53-8481

Contextual Info: Transistor B minil^eel NPN H atin g s mlnlBefif Bui* 500 pcs T yp e N PN G en eral P urpo se 73-2369 2369 73-8181 BC818-16 73-8182 BC818 25 73-8183 BC818 40 100 pcs 53-2369 53-8181 53-8182 53-8183 VCEO V Ic mA hFE M in-M ax @ lc VCE 15V 500mA 10mA@1V 25V

2369A

Abstract: 2n2369a
Contextual Info: 2N 2369A SILICON PLANAR NPN HIGH-SPEED S ATU R ATED SWITCH The 2N 2369A is a silicon planar epitaxial NPN transistor in Jedec T O -1 8 metal case. It is designed specifically fo r high-speed saturated switching applications at current levels from 100 ,uA to 100 mA.

2369A

Abstract: transistor 2369a
Contextual Info: 2N 2369A SILICON PLANAR NPN HIGH-SPEED SATURATED SWITCH The 2N 2369A is a silicon planar epitaxial NPN transistor in Jedec T O -1 8 metal case. It is designed specifically fo r high-speed saturated switching applications at current levels from 100 jUA to 100 m A.