2N708 Search Results

transistor C 4231

Abstract: 2N7081
Contextual Info: 2N7081 ffSiBcanix in c o r p o ra te d N-Channel Enhancement Mode Transistor TO-257AB Hermetic Package TO P VIEW o PRODUCT SUMMARY V BR|DSS 100 rDS(ON •d (Ù ) (A) 0.15 12 1 GATE 2 DRAIN 3 SOURCE 1 2 3 C ase Isolated ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)

2N7085

Contextual Info: 2N7085 e r S ü c o n ix in c o rp o ra te d N-Channel Enhancement Mode Transistor TO-257AB Hermetic Package TOP VIEW o PRODUCT SUMMARY V BR DSS r DS(ON) •d (V) (A) (A) 100 0.075 20 1 GATE 2 DRAIN 3 SOURCE Case Isolated 1 2 3 ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)

Contextual Info: Tem ic 2N7089 P-Channel Enhancement-Mode Transistor Product Summaiy V BR DSS (V) r DS(on) (Ö ) I d (A) -1 0 0 0.30 -1 0 TO-257AB Herm etic Package O " l! C ase Isolated G D S P-Channel M O S F E T Top View

2N7080

Contextual Info: Tem ic 2N7080 Siliconix P-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) rDS(on) ( ß ) I d (A) -2 0 0 0.500 - 9 .5 T O -2 5 4 A A S H erm etic Package 9 O C ase Isolated O u uu D D S G Top View P-C hannel M O S F E T Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted)

2n706 transistor

Abstract: transistor 2n706 2n2222 2N2222AA 2N706 2n2222 jan 03150 transistor transistor 2N2222 2N708 2N718
Contextual Info: N EW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTOR TO-18 sus VOLTS Ic (max) AMPS 2N706 15 0.05 2N708 15 - 2N718 40h 0.5 2N718AA 50 2N720A VcEO PACKAGE TO-18 T0206AA DEVICE TYPE @ It/ ^ CE min/max @ mA/V 1*FE c<je fx p (MHz) 20@10/1 0.6@10/1 6 200 30-120@10/l

2N7086

Contextual Info: 2N7086 Siliconix NĆChannel EnhancementĆMode Transistor Product Summary V BR DSS (V) rDS(on) (W) ID (A) 200 0.16 14 TOĆ257AB Hermetic Package D G Case Isolated S G D S NĆChannel MOSFET Top View Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)

2N7085

Contextual Info: 2N7085 Siliconix NĆChannel EnhancementĆMode Transistor Product Summary V BR DSS (V) rDS(on) (W) ID (A) 100 0.075 20 TOĆ257AB Hermetic Package D G Case Isolated S G D S NĆChannel MOSFET Top View Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)

2N7085

Contextual Info: 2N7085 N-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) rDS(on) (W) ID (A) 100 0.075 20 TO-257AB Hermetic Package D G Case Isolated S G D S N-Channel MOSFET Top View Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted) Parameter Symbol

N2369

Abstract: 2N4260 2N2368 2N3546 2N2369A 2N3227 2N4261 2N706 2N708 2N869A
Contextual Info: TO-18 T R A N S IS T O R S F A S T S P E E D SW IT C H NPN Device Type 2N706 2N708 2N914 2N2368 2N 2369 2 N 2369A 2N3227 BSX90 2N4260 2N4261 lc max. mA Polarity v C EO , VcER<+> (Volts) NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN 20 (+ ) 15 15 15 15 15 20 12

2222 NPN

Abstract: 2222a NPN 2n h 2222a 2222a 2221A npn 2907A 2N708 2N709 2N753 2369A
Contextual Info: JEDEC TRANSISTORS 2N 706 2N 706A 2N708 2N709 2N 709A 2N 722 2N 743 2N 744 2N753 2N 834 2N 834A 2N 869A 2N 914 2N 995 2N 2205 2N 2218 2N 2218A 2N 2219 2N 2219A 2N 2221 2N 2221A 2N 2222 2N 2222A 2N 2368 2N 2369 2N 2369A 2N 2475 2N 2894 2N 2904 2N 2904A 2N 2905

2N708

Contextual Info: TECHNICAL DATA NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/312 Devices Qualified Level 2N708 JAN, JANTX MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector-Emitter Voltage Total Power Dissipation

MOSFET 100V

Abstract: 2N7081 100v 11A
Contextual Info: 2N7081–220M–ISO MECHANICAL DATA Dimensions in mm inches 4.83 (0.190) 5.08 (0.200) 0.89 (0.035) 1.14 (0.045) VDSS ID(cont) RDS(on) 3.56 (0.140) Dia. 3.81 (0.150) 10.41 (0.410) 10.92 (0.430) 13.38 (0.527) 13.64 (0.537) 10.41 (0.410) 10.67 (0.420) 16.38 (0.645)

2N7080

Contextual Info: 2N7080 C T SiEconix JJm in c o rp o ra te d P-Channel Enhancement Mode Transistor TO -254A A Herm etic Package TOP VIEW o PRODUCT SUMMARY V BR DSS (V) rDS(ON) (Cl) •d (A) -20 0 0.500 -9 .5 1 DRAIN 2 SOURCE 3 GATE 1 2 3 Case Isolated ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)1

transistor 257A

Abstract: 2N7089 SD 4248
Contextual Info: CX*Siliconix Jm M 2N7089 in c o r p o r a t e d P-Channel Enhancement Mode Transistor TO -257A B Herm etic Package TOP VIEW o PRODUCT SUMMARY V BR DSS r DS(ON) •d (V) (il) (A) -1 0 0 0.30 -10 .0 1 GATE 2 DRAIN 3 SOURCE 1 2 3 Case Isolated ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)1

2N7080

Contextual Info: 2N7080 Siliconix PĆChannel EnhancementĆMode Transistor Product Summary V BR DSS (V) rDS(on) (W) ID (A) -200 0.500 -9.5 TOĆ254AA Hermetic Package S G Case Isolated D D S G PĆChannel MOSFET Top View Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)

2N7080

Contextual Info: T em ic 2N7080 Siliconix P-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) rDS(on) ( ß ) I d (A) -2 0 0 0.500 -9 .5 TO-2S4AA Hermetic Package o rO |h D S G P-C hannel M O S F E T Top View Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted)

Contextual Info: High Speed Metal Can Transistors VCEO Part No. Polarity 2N2369 2N2369A NPN 2N708 2N3467 20070515 PNP sust Min. (V) toff @ Ic ton Max. Max. Ic Bipolar Transistors hFE @ IC VCE(sat) @ IC & IB Max. IC PD fT Package @ Min. IB 25°C (mA) (MHz) (mW) Bulk (ns)

2n708

Abstract: 2n708 transistor transistor 2n708
Contextual Info: 2N708 HIGH-SPEED SATURATED SWITCH DESCRIPTION The 2N708 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case, designed for very fast switching applications. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Value Unit V CBO

2n708

Abstract: 2N708 JANTX
Contextual Info: TECHNICAL DATA 2N708 JANTX Processed per MIL-PRF-19500/312C MIL-PRF QPL NPN SWITCHING SILICON TRANSISTORS DEVICES MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage VCEO Collector-Base Voltage VCBO Emitter-Base Voltage VEBO Collector-Emitter Voltage

2n915

Contextual Info: Small Signal Transistors TO-18 Case TYPE NO. DESCRIPTION 2N703 BVCBO BVCEO BVEBO ICBO @ V (V) (V) (mA) MIN MIN MIN MAX *ICES *ICEV NPN AMPL/SWITCH 25 25 5.0 - 2N706C NPN SAT SWITCH 40 2N708 NPN SAT SWITCH 2N709A NPN SAT SWITCH 2N717 2N718A VCB (V) hFE

2N708

Contextual Info: rZ 7 * 7# S G S -T H O M S O N R ÜICTIiMDOS 2N708 HIGH-SPEED SATURATED SWITCH DESCRIPTION The 2N708 is a silicon planar epitaxial NPN transis­ tor in Jedec TO-18 metal case, designed for very fast switching applications. INTERNAL SCHEM ATIC DIAG RAM B o - @

D 4242 transistor

Abstract: transistor C 4242 H 4242 transistor transistor 4242 4242 transistor 2N7086 w 1p 257AB A-1456
Contextual Info: C r 9 ficanix 2N7086 Jm B in c o r p o ra t e d N-Channel Enhancement Mode Transistor TO-257AB Hermetic Package T O P VIEW o PRODUCT SUMMARY r DS ON • d (V) (H) (A) 200 0.16 14 V (BR)DSS 1 GATE 2 DRAIN 3 SO U R CE 1 2 3 Case Isolated ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)

2n2224

Abstract: 2N2222B 2N2244 2N4418 2N2374 2SC321H 2N2250 ESM2369 rca 2N2270 2N2245
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 -60 65 - 70 EN914 2N708 2N914A 2N914A 2N914A 40219 40219 40221 40221 BSY19 BSY19 BSY19 2N3605A 2N3606A 2S95A 2S95A 2N1708A 2N321 0 BF165 2SC321H 2N2319 2N4264 2N2272

2n4276

Contextual Info: N PN Transistors saturated switches Type No Case Sty •• V CIIO V, M,n V CEO 2N706 TO•18 25 15 2N708 TO·18 40 15 20 12 2N744 TO·18 2N753 TO·18 25 2NB34 TO·18 40 2N2369 TO·18 40 15 2N2369A TO·18 40 15 JAN2N2369A TO·18 40 15 JANTX2N2369A TO·18 40