2N7086 Search Results

2N7086

Contextual Info: 2N7086 Siliconix NĆChannel EnhancementĆMode Transistor Product Summary V BR DSS (V) rDS(on) (W) ID (A) 200 0.16 14 TOĆ257AB Hermetic Package D G Case Isolated S G D S NĆChannel MOSFET Top View Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)

Contextual Info: Tem ic 2N7086 N-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) r DS(on) (Q ) I d (A) 200 0.16 14 TO-257AB H erm etic P ackage O r O — It J |i Case Isolated s G D S Top View

D 4242 transistor

Abstract: transistor C 4242 H 4242 transistor transistor 4242 4242 transistor 2N7086 w 1p 257AB A-1456
Contextual Info: C r 9 ficanix 2N7086 Jm B in c o r p o ra t e d N-Channel Enhancement Mode Transistor TO-257AB Hermetic Package T O P VIEW o PRODUCT SUMMARY r DS ON • d (V) (H) (A) 200 0.16 14 V (BR)DSS 1 GATE 2 DRAIN 3 SO U R CE 1 2 3 Case Isolated ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)

Contextual Info: 2N7086 MECHANICAL DATA Dimensions in mm inches 4.83 (0.190) 5.08 (0.200) 0.89 (0.035) 1.14 (0.045) 3.56 (0.140) Dia. 3.81 (0.150) 10.41 (0.410) 10.92 (0.430) 13.38 (0.527) 13.64 (0.537) 16.38 (0.645) 16.89 (0.665) 10.41 (0.410) 10.67 (0.420) N–CHANNEL ENHANCEMENT MODE

2N7086

Contextual Info: 2N7086 MECHANICAL DATA Dimensions in mm inches 4.83 (0.190) 5.08 (0.200) 0.89 (0.035) 1.14 (0.045) 3.56 (0.140) Dia. 3.81 (0.150) 10.41 (0.410) 10.92 (0.430) 13.38 (0.527) 13.64 (0.537) 16.38 (0.645) 16.89 (0.665) 10.41 (0.410) 10.67 (0.420) N–CHANNEL ENHANCEMENT MODE

TO-254

Abstract: T0-204 IRF450 equivalent
Contextual Info: CT'Sificonix .X J P in c o r p o r a te d Industry Standard Military MOSFETs Package Equivalent Commercial Part Number 0.18 75 T0-204 IRF130 542 9.0 0.40 75 T0-204 IRF230 542 400 5.5 1.0 75 TO-204 IRF330 542 500 4.5 1.5 75 TO-204 IRF430 542 Part Number V BRJDSS

257AB

Abstract: BS250 2N7080 2N7082 2N7085 2N7086 2N7089 2N7090 2N7091 2N7092
Contextual Info: - 317 - * * Vd s Sí € tt £ Vg s m. Ta=25*C Id I g ss Pd V g s th) I d ss i fé f Ds(on) Vd s = or « m (Ta=25‘ C) Iß(on) g fs ft Ci ss Coss Crss (*typ) (max) (pF) (*typ) (max) (pF) (*typ) (max) (pF) 450* V g s -0 Vg s * /CH Vdg min * /CH (nA) Vg s

Diode 400V 5A

Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM

si 13001

Abstract: buz90 BS170 BUZ11 buzh F133 251C BSS123 BUZ71 BUZ71A
Contextual Info: - 272 - f m % *± m * Vd s or £ t V £ Vg s Vd g V (V) %i fê (Ta=25,C ) ÎD Pd * /CH * /CH (A) (W) (nA) Vg s th) Id s s ÎGSS Vg s (V) (UA) Vd s (V) min max (V) (V) % 14 (Ta=25,C ) b(on) Ciss gfs Vg s (V) (Q> Id (A) Vg s (V) *typ (A) *typ (S) 3.0 1.0 6.0

lm3i7

Abstract: BFD22 ic LM7812 LM3I7-220M Lti086 pi38a 2N3904D LM7924 BFD48 BYVI43-35M
Contextual Info: MilitaryAerospace Division C eram ic surface m ount devices and herm etic m etal packages T h e following L C C 2 - p a c k a g e d devices have been specifically designed to accommodate dual LCC2 4p LCC3 M edium -pow er L C C Hi Sir T Ó 63 ♦ T O I II Page 24

SMP16P06

Abstract: SMM14N65 SMW60N06-18 SMP25N06 SMW60N10 SMP60N06-18 MDD100B SMM24N40 SMM40N20 SMV1P06
Contextual Info: CXSiliconix in c o r p o r a te d Selector Guide Plastic Packages N-Channel Cont’d N-Channel V(BÇDSS (A) Part Number >d s ( o n ) (Û ) V(BRJDSS r D S(O N ) Id (A) ( il) Part Number 650 5.8 1.5 VNT008D1 50 30 0.040 650 5.0 2.0 VNT009D1 50 25 0.060 BUZ11A1

6849a

Abstract: SC 200 T 2n7227
Contextual Info: T emic S e m i c o n d u c t o r s T0254 T0257 N-Channel Devices Military Faftk ‘ Î fi ? ''* r ' \.Vt' f i l V(BRiDSS<V) Hermetic Packages and Industry-Standard Military MOSFETs IRFML50 2N7075 2N7085 | 2N7085 | 2N7224 a IR FM I50 2N7081 2N7081 [RFM250

1N7001

Abstract: 1N7000 IXTP4N90 2N6660 2N6661 2N6755 IXTP4N80A IXTP7N45 IXTP7N45A IXTP7N50
Contextual Info: 271 - - M. % ¿ £ tt t Vd s or * Vdg h V € A £ të (Ta=25^C) Vg s (V) Id I gss Pd * /CH * /CH (A) (W) % 1 CnA) V g s th) I dss Vg s (V) (m a Vd s (V) ) min max (V) (V) Vd s = Vg s Id (mA) Ö-) '14 F Ds(on) b(on) (Ta=25tD) gfs Ciss Coss Crss <*typ) (max)

P-Channel Depletion-Mode

Abstract: MD80C31 JANTX2N4858 5962-9089101MEA SI9110AK JANTX2N6661 4Kx8 sram ttl MGM TRANSFORMER JANTX2N5114 janTXV2N5545
Contextual Info: Aerospace and Defense Product Offering Siliconix MIL–S–19500 Compliant Devices 2N5547JANTX MIL–S–19500/430 Siliconix Part No. Description 2N5547JANTXV MIL–S–19500/430 2N4856JAN MIL–S–19500/385 2N6660JANTX MIL–S–19500/547 2N4856JANTX MIL–S–19500/385