257AB Search Results

transistor C 4231

Abstract: 2N7081
Contextual Info: 2N7081 ffSiBcanix in c o r p o ra te d N-Channel Enhancement Mode Transistor TO-257AB Hermetic Package TO P VIEW o PRODUCT SUMMARY V BR|DSS 100 rDS(ON •d (Ù ) (A) 0.15 12 1 GATE 2 DRAIN 3 SOURCE 1 2 3 C ase Isolated ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)

2N7085

Contextual Info: 2N7085 e r S ü c o n ix in c o rp o ra te d N-Channel Enhancement Mode Transistor TO-257AB Hermetic Package TOP VIEW o PRODUCT SUMMARY V BR DSS r DS(ON) •d (V) (A) (A) 100 0.075 20 1 GATE 2 DRAIN 3 SOURCE Case Isolated 1 2 3 ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)

Contextual Info: Tem ic 2N7089 P-Channel Enhancement-Mode Transistor Product Summaiy V BR DSS (V) r DS(on) (Ö ) I d (A) -1 0 0 0.30 -1 0 TO-257AB Herm etic Package O " l! C ase Isolated G D S P-Channel M O S F E T Top View

2N7085

Contextual Info: 2N7085 N-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) rDS(on) (W) ID (A) 100 0.075 20 TO-257AB Hermetic Package D G Case Isolated S G D S N-Channel MOSFET Top View Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted) Parameter Symbol

2N7091

Contextual Info: ITSiicanix 2N7091 in c o r p o r a te d P-Channel Enhancement Mode Transistor TO-257AB Hermetic Package TOP VIEW o PRODUCT SUMMARY -10 0 •d k k.O V BR DSS (A) 0.20 -1 4 1 GATE 2 DRAIN 3 SOURCE Case Isolated 1 2 3 ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)1

2N7092

Contextual Info: 2N7092 CX'SiSconix in c o r p o r a te d P-Channel Enhancement Mode Transistor TO-257AB Hermetic Package TOP VIEW o PRODUCT SUMMARY V fDS(ON) <n) (A) -200 0.50 -8.0 V(BR)DSS •d 1 GATE 2 DRAIN 3 SOURCE 1 2 3 Case Isolated ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)1

Contextual Info: Tem ic 2N7086 N-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) r DS(on) (Q ) I d (A) 200 0.16 14 TO-257AB H erm etic P ackage O r O — It J |i Case Isolated s G D S Top View

transistor c 4236

Abstract: ic cow 160v 150 N7082 2N7082 EI33
Contextual Info: SILICONIX INC 33E D JïiSSSKSä • 0254735 QOlbOSê 7 « S I X 2N 7082 T ^ -u N-Channel Enhancement Mode Transistor TO-257AB Hermetic Package TOP VIEW o PRODUCT SUMMARY V BRJDSS •d (A 200 0.30 9.0 1 GATE 2 DRAIN 3 SOURCE 1 2 3 Case Isolated ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)

Contextual Info: DUAL FAST RECOVERY RECTIFIER DIODE BYV32-50M BYV32-150M BYV32-100M BYV32-200M • Very Low Reverse Recovery Time – trr <35ns. • Voltage Range 50V To 200V. • Hermetic TO220 TO-257AB Isolated Metal Package. • Ideally Suited For Switching Power Supplies, Inverters And As

Contextual Info: N-CHANNEL POWER MOSFET IRFY240 / IRFY240M • Low RDS on MOSFET Transistor In A Hermetic Metal TO-257AB Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)

Transistor 3-347

Abstract: 3-347
Contextual Info: SILICON PLANAR EPITAXIAL NPN TRANSISTOR BDS16 / BDS17 • High Voltage • Hermetic TO220M T0-257AB Isolated Metal Package • Ideally suited for Power Linear, Switching and general Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)

Contextual Info: DUAL FAST RECOVERY RECTIFIER DIODE BYV32-50M BYV32-150M BYV32-100M BYV32-200M • Very Low Reverse Recovery Time – trr <35ns. • Voltage Range 50V To 200V. • Hermetic TO220 TO-257AB Isolated Metal Package. • Ideally Suited For Switching Power Supplies, Inverters And As

Contextual Info: DUAL FAST RECOVERY RECTIFIER DIODE BYV32-50M BYV32-150M BYV32-100M BYV32-200M • Very Low Reverse Recovery Time – trr <35ns. • Voltage Range 50V To 200V. • Hermetic TO220 TO-257AB Isolated Metal Package. • Ideally Suited For Switching Power Supplies, Inverters And As

D 4242 transistor

Abstract: transistor C 4242 H 4242 transistor transistor 4242 4242 transistor 2N7086 w 1p 257AB A-1456
Contextual Info: C r 9 ficanix 2N7086 Jm B in c o r p o ra t e d N-Channel Enhancement Mode Transistor TO-257AB Hermetic Package T O P VIEW o PRODUCT SUMMARY r DS ON • d (V) (H) (A) 200 0.16 14 V (BR)DSS 1 GATE 2 DRAIN 3 SO U R CE 1 2 3 Case Isolated ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)

Contextual Info: SILICON PLANAR EPITAXIAL NPN TRANSISTOR BDS16 / BDS17 • High Voltage • Hermetic TO220M T0-257AB Isolated Metal Package • Ideally suited for Power Linear, Switching and general Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)

9528

Contextual Info: N-CHANNEL POWER MOSFET IRFY430 / IRFY430M • BVDSS = 500V, MOSFET Transistor In A Hermetic Metal TO-257AB Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated

9522 transistor

Abstract: 9522
Contextual Info: N-CHANNEL POWER MOSFET IRFY240 / IRFY240M • Low RDS on MOSFET Transistor In A Hermetic Metal TO-257AB Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)

transistor 9527

Abstract: 9527 irfy330 tr 9527
Contextual Info: N-CHANNEL POWER MOSFET IRFY330 • BVDSS = 400V, MOSFET Transistor In A Hermetic Metal TO-257AB Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated

Contextual Info: N-CHANNEL POWER MOSFET IRFY430 / IRFY430M • BVDSS = 500V, MOSFET Transistor In A Hermetic Metal TO-257AB Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated

BYV32-200

Abstract: 100v 20a fast recovery power diode
Contextual Info: DUAL FAST RECOVERY RECTIFIER DIODE BYV32-50M BYV32-150M BYV32-100M BYV32-200M • Very Low Reverse Recovery Time – trr <35ns. • Voltage Range 50V To 200V. • Hermetic TO220 TO-257AB Isolated Metal Package. • Ideally Suited For Switching Power Supplies, Inverters And As

BDS12M2A

Abstract: EG marking Q217
Contextual Info: SILICON NPN EPITAXIAL BIPOLAR TRANSISTOR BDS12M2A • High Voltage • Hermetic TO-257AB Isolated Metal Package • Ideally suited for Power Linear, Switching and general Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated

Contextual Info: T e m ic 2N7090 Siliconix_ P-Channel Enhancement-Mode Transistor Product Summaiy V BR DSS (V) r DS(on) ( ß ) I d (A) -2 0 0 0.80 - 5 .7 TO-257AB H erm etic Package S 9 O C ase iso lated O D UUU G D S Tbp View P-C hannel M O S F E T Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted)

2N7090

Contextual Info: C T S ilico n ix ^ U r 2N7090 in c o r p o r a te d P-Channel Enhancement Mode Transistor TO-257AB Hermetic Package TOP VIEW o PRODUCT SUMMARY V BR DSS -2 0 0 •d r DS(ON) (H ) (A) 0 .8 0 -5 .7 1 GATE 2 DRAIN 3 SOURCE 1 2 3 Case Isolated ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)1

2N7091

Contextual Info: 2N7091 P-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) rDS(on) (W) ID (A) –100 0.20 –14 TO-257AB Hermetic Package S G Case Isolated D G D S P-Channel MOSFET Top View Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted) Parameter