IRFY240 Search Results

IRFY240M

Contextual Info: IRFY240M Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO257AB Metal Package. 10.6 (0.42) 4.6 (0.18) 10.6 (0.42) 3.70 Dia. Nom 1.5(0.53) 16.5 (0.65) 0.8 (0.03) 1 2 3 12.70 (0.50 min) VDSS = 200V ID = 16A RDS(ON) = 0.18Ω Ω 1.0 (0.039)

Contextual Info: SENSITRON SEMICONDUCTOR SHD219403 TECHNICAL DATA DATA SHEET 893, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 200 Volt, 0.21 Ohm, 14A MOSFET œ Ceramic Hermetic Package œ Fast Switching œ Low RDS on œ Electrically Equivalent to IRFY240 MAXIMUM RATINGS

br 003 m 527

Abstract: IRFY240 K120
Contextual Info: IRFY240 POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW R DS 0 n • LOW DRIVE REQUIREM ENT • DYNAMIC d v / d t RATING ABSOLUTE MAXIMUM RATINGS (Tc = 25 C unless otherwise noted) SYMBOL VALUE UNITS D rain-Source V oltage V ds 200 V G ate-Source V oltage

Contextual Info: N-CHANNEL POWER MOSFET IRFY240 / IRFY240M • Low RDS on MOSFET Transistor In A Hermetic Metal TO-257AB Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)

IRFY240

Contextual Info: IRFY240 MECHANICAL DATA Dimensions in mm inches 4.70 5.00 0.70 0.90 3.56 Dia. 3.81 VDSS ID(cont) RDS(on) 10.41 10.92 13.39 13.64 10.41 10.67 16.38 16.89 N–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS 12.70 19.05 1 2 3 200V 12A Ω 0.19Ω FEATURES 0.89

IRFY240C

Abstract: IRFY240CM
Contextual Info: Provisional Data Sheet No. PD 9.1289B IRFY240CM HEXFET POWER MOSFET N-CHANNEL Product Summary 200 Volt, 0.18Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance.

Contextual Info: Back to FETs IRFY240 POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW R DS 0 n • LOW DRIVE REQUIREM ENT • DYNAMIC d v / d t RATING A BSO LU T E M A X IM U M R A T IN G S (T c = 25 C unless otherw ise noted) P A R A M E T E R S / T E ST C O N D IT IO N S

MOSFET 7311

Abstract: IRFY240C
Contextual Info: IRFY240C MECHANICAL DATA Dimensions in mm inches 4.83 (0.190) 5.08 (0.200) 0.89 (0.035) 1.14 (0.045) 3.56 (0.140) Dia. 3.81 (0.150) 10.41 (0.410) 10.92 (0.430) 13.38 (0.527) 13.64 (0.537) 16.38 (0.645) 16.89 (0.665) 10.41 (0.410) 10.67 (0.420) N–CHANNEL

Contextual Info: PD-91289E POWER MOSFET THRU-HOLE TO-257AA IRFY240C,IRFY240CM 200V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY240C 0.18 Ω 16A Ceramic IRFY240CM 0.18 Ω 16A Ceramic TO-257AA HEXFET® MOSFET technology is the key to International

Contextual Info: PD - 94187 POWER MOSFET THRU-HOLE TO-257AA IRFY240,IRFY240M 200V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY240 0.18 Ω 16A Glass IRFY240M 0.18 Ω 16A Glass HEXFET® MOSFET technology is the key to International

9522 transistor

Abstract: 9522
Contextual Info: N-CHANNEL POWER MOSFET IRFY240 / IRFY240M • Low RDS on MOSFET Transistor In A Hermetic Metal TO-257AB Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)

IRFY240C

Abstract: semelab mosfet
Contextual Info: IRFY240C Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO257AB Metal Package. 10.6 (0.42) 4.6 (0.18) 10.6 (0.42) 3.70 Dia. Nom 1.5(0.53) 16.5 (0.65) 0.8 (0.03) 1 2 3 12.70 (0.50 min) VDSS = 200V ID = 16A RDS(ON) = 0.18Ω Ω 1.0 (0.039)

IRFY240C

Abstract: HEXFET pinout IRFY240CM
Contextual Info: PD-91289E POWER MOSFET THRU-HOLE TO-257AA IRFY240C,IRFY240CM 200V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY240C 0.18 Ω 16A Ceramic IRFY240CM 0.18 Ω 16A Ceramic TO-257AA HEXFET® MOSFET technology is the key to International

IRFY240

Abstract: SHD219403
Contextual Info: SENSITRON SEMICONDUCTOR SHD219403 TECHNICAL DATA DATA SHEET 893, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 200 Volt, 0.21 Ohm, 14A MOSFET œ Ceramic Hermetic Package œ Fast Switching œ Low RDS on œ Electrically Equivalent to IRFY240 MAXIMUM RATINGS

IRFY240

Abstract: IRFY240C IRFY240CM IRFY240M
Contextual Info: PD - 94187 POWER MOSFET THRU-HOLE TO-257AA IRFY240,IRFY240M 200V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY240 0.18 Ω 16A Glass IRFY240M 0.18 Ω 16A Glass HEXFET® MOSFET technology is the key to International

IRFY240

Abstract: IRFY240C IRFY240CM IRFY240M
Contextual Info: PD - 91289C POWER MOSFET THRU-HOLE TO-257AA IRFY240C,IRFY240CM 200V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY240 0.18 Ω 16A Glass IRFY240M 0.18 Ω 16A Glass HEXFET® MOSFET technology is the key to International

9522 transistor

Contextual Info: N-CHANNEL POWER MOSFET IRFY240 • Low RDS on MOSFET Transistor In A Hermetic Metal TO-257AB Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)

Contextual Info: PD - 91289D POWER MOSFET THRU-HOLE TO-257AA IRFY240C,IRFY240CM 200V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number ID Eyelets IRFY240C RDS(on) 0.18 Ω 16A Ceramic IRFY240CM 0.18 Ω 16A Ceramic HEXFET® MOSFET technology is the key to International

IRF460

Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Contextual Info: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,

shd2263

Contextual Info: SENSITRON SEMICONDUCTOR SHD226403 SHD226403R TECHNICAL DATA DATA SHEET 171, REV. B Formerly Part Number SHD2263 HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 200 Volt, 0.21 Ohm, 14A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Low RDS on

IRFM9034

Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261
Contextual Info: International Rectifier Government and Space Products BVDSS Part Number Channel V RDS(on) (Ω) PD @ TC = 25°C ID @ T =100°C C (A) ID @ T =25 C (A) Total Dose Rating Rads (Si) (W) Fax-on-Demand HEXFET Power MOSFETs to view a data sheet, click on the part number

irf5n5210sc

Abstract: IRHNA57064SCS IRHM597260 irf5n5210 irhna597160scs irhf7110scs IRHG57110 IRHNA57264SESCS 35CLQ045SCS 12CLQ150SCS
Contextual Info: PD - 94246A IRHG567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET 4# TECHNOLOGY THRU-HOLE MO-036AB Product Summary Part Number IRHG567110 IRHG563110 IRHG567110 IRHG563110 Radiation Level RDS(on) 100K Rads (Si)

Contextual Info: International Government and Space HEXFET Power MOSFETs IlC T R e c H ffe r Hermetic Package N & P Channel Part Number b v DSS V RDS(on) (Ohms) lp @ Tr = 25°C <D@ TC = 100°C R thJC Max. Pd @ Case Tc = 25°C Outline (»> (A) (K/W) (W) Number (1) 0.6 17

irfm9034

Contextual Info: 1 I n t e r n a t io n a l R e c t if ie r Government and Space Products Pvt Numb« 2 (3) bvdss (Vote) RDS(on) (Ohms) ID« Tc*2T (Amps) 10« TC=100“ (Amps) Pd O Tc«25° (Watts) Fax-onOamand Number Case Styl«, (Cas* (Min») (1) HEXFET Power MOSFETs Hermetic Package, N- and P-Channel