IRF9140 Search Results

IRF9140

Contextual Info: PD - 93976B IRF9140 100V, P-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number BVDSS RDS(on) IRF9140 -100V 0.2Ω ID -18A  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

Contextual Info: IRF9140 MECHANICAL DATA Dimensions in mm inches P–CHANNEL POWER MOSFET 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 11.18 (0.440) 10.67 (0.420) 2 1 26.67 (1.050) max. 17.15 (0.675) 16.64 (0.655) VDSS ID(cont) RDS(on)

1RF9540

Abstract: l 9143 irf 409 IRF 9540 L 9141 IRF95XX IRF high current p-channel IRF9140 IRF9140 TO 220 IRF9540
Contextual Info: 7964142 SAMSUNG S E M I C O N D U C T O R INC Hfl DE 1 7 ^ 4 1 4 5 IRF9140/9141/9142/9143 IRFP9140/9141 /9142/9143 “ IRF9540/9541Z9542/9543_ ^ " D0GS40Ö t- P-CHANNEL POWER MOSFETS Preliminary Specifications - 1 0 0 Volt, 0.2 Ohm SFET PRODUCT SUMMARY

IRF9140

Abstract: TA17521 TB334
Contextual Info: IRF9140 Data Sheet February 1999 -19A, -100V, 0.200 Ohm, P-Channel Power MOSFET These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode

Contextual Info: SENSITRON SEMICONDUCTOR SHD219409 TECHNICAL DATA DATA SHEET 682, REV - Formerly part number SHD2199 HERMETIC POWER MOSFET P-CHANNEL FEATURES: œ -100 Volt, 0.2 Ohm, -18A MOSFET œ Electrically Isolated Hermetically Sealed œ Low RDS on œ Equivalent to IRF9140 Series

Contextual Info: PD - 93976 IRF9140 100V, P-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number BVDSS RDS(on) IRF9140 -100V 0.2Ω ID -18A  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

IRF9140

Contextual Info: IRF9140 MECHANICAL DATA Dimensions in mm inches P–CHANNEL POWER MOSFET 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) VDSS ID(cont) RDS(on) 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 11.18 (0.440) 10.67 (0.420) 2 1 26.67 (1.050) max. 17.15 (0.675) 16.64 (0.655)

Contextual Info: SENSITRON SEMICONDUCTOR SHD218409 SHD218409A SHD218409B TECHNICAL DATA DATA SHEET 349, REV - HERMETIC POWER MOSFET P-CHANNEL FEATURES: œ -100 Volt, 0.2 Ohm, -18A MOSFET œ Electrically Isolated Hermetically Sealed œ Low RDS on œ Equivalent to IRF9140 Series

IRF9140

Abstract: SHD219409 SHD2199
Contextual Info: SENSITRON SEMICONDUCTOR SHD219409 TECHNICAL DATA DATA SHEET 682, REV - Formerly part number SHD2199 HERMETIC POWER MOSFET P-CHANNEL FEATURES: œ -100 Volt, 0.2 Ohm, -18A MOSFET œ Electrically Isolated Hermetically Sealed œ Low RDS on œ Equivalent to IRF9140 Series

TA17521

Abstract: IRF9140
Contextual Info: HAJims S IRF9140, IRF9141, IRF9142, IRF9143 Semiconductor y y -19A and -15A, -80V and -100V, 0.20 and 0.30 Ohm, P-Channel Power MOSFETs November 1997 Features Description • -19A and -15A, -80V and -100V • High Input Impedance These are P-Channel enhancement mode silicon gate

IRF9140SM

Contextual Info: Illl iF t i mi IRF9140SM SEME LAB MECHANICAL DATA Dimensions in mm inches P-CHANNEL POWER MOSFET 11.5 2.0 3.5 n a ^D(cont) 3.0 3.5 -100V -14A 0.020Û VDss 0.25 M R DS(on) <£> FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE n • SM ALL FOOTPRINT - EFFICIENT USE OF

IRF9140

Abstract: P channel Mosfets P-CHANNEL SHD218509B
Contextual Info: Part Number Search: MOSFETs Product Specifications MOSFETs, P Channel SM Type Number V BR DSS (Volts) ID (25°C) (Amps) ID (100°C) (Amps) PD (25°C) RDS(on) @ ID (Ohms@Amps) theta JC (°C/W) Similar Part Type Package Style -100 -18 -11 125 0.2 @ -11 1 IRF9140

IC 4051 data sheet

Abstract: IRF9140 SHD239409
Contextual Info: SENSITRON SEMICONDUCTOR SHD239409 TECHNICAL DATA DATA SHEET 4051, REV - HERMETIC POWER MOSFET P-CHANNEL FEATURES: œ -100 Volt, 0.2 Ohm, -18A MOSFET œ Electrically Isolated Hermetically Sealed œ Low RDS on œ Equivalent to IRF9140 Series MAXIMUM RATINGS

IRF9

Contextual Info: SENSITRON SEMICONDUCTOR SHD239409 TECHNICAL DATA DATA SHEET 4051, REV - HERMETIC POWER MOSFET P-CHANNEL FEATURES: œ -100 Volt, 0.2 Ohm, -18A MOSFET œ Electrically Isolated Hermetically Sealed œ Low RDS on œ Equivalent to IRF9140 Series MAXIMUM RATINGS

f9140

Abstract: IRF9140 IRF9141 IRF9142 IRF9143
Contextual Info: Rugged Power M O IRF9140, IRF9141 IRF9142, IRF9143 File Number 2278 Avalanche-Energy-Rated P-Channel Power MOSFETs -19 A and -15 A, -60 V and -100 V fDSion» = 0.20 O and 0.30 fì TERMINAL DIAGRAM

Contextual Info: PD - 93976B IRF9140 100V, P-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number BVDSS RDS(on) IRF9140 -100V 0.2Ω ID -18A  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

IRF460

Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Contextual Info: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

IRF9120

Abstract: 1rf830 1rf9530 IRF9122 IRF9513 IRF9141 IRF9512 IRF9523 IRF843 IRF9130
Contextual Info: - * sy € i± £ IR F 9522 IRF9523 IRF9530 IRF9531 IRF9532 IRF9533 »%^<n * f - 1 IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR ]R IR IR IR ¡R IR IR IR IR IR IR IR IR IR IR £ is V 500 N 45 0 P -100 P -60 P -100 P -60 P -100 P -60 P -100 P -60 P -200 P -150

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

IRF9140

Abstract: FP0001 SFF9240J
Contextual Info: 5U&II /" '- \ l| PRELIMINARY SFF9240J - SOLID STATE DEVICES, INC 14849 Firestone Boulevard - La Mirada,CA 90638 Phone: 714 670-SSDI (7734) Fax: (714) 522-7424 -11 AMP -200 VOLTS 0.50Q P-CHANNEL POWER MOSFET Designer’s Data Sheet

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

irfm9034

Contextual Info: 1 I n t e r n a t io n a l R e c t if ie r Government and Space Products Pvt Numb« 2 (3) bvdss (Vote) RDS(on) (Ohms) ID« Tc*2T (Amps) 10« TC=100“ (Amps) Pd O Tc«25° (Watts) Fax-onOamand Number Case Styl«, (Cas* (Min») (1) HEXFET Power MOSFETs Hermetic Package, N- and P-Channel

2N7334

Abstract: irfg9110 H24 SMD
Contextual Info: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130