2N7334 Search Results

Contextual Info: SENSITRON SEMICONDUCTOR 2N7334 TECHNICAL DATA DATA SHEET 691, REV. A HERMETIC POWER MOSFET N-CHANNEL QUAD DESCRIPTION: 100 VOLT, 1.0 AMP, 0.70 OHM MOSFET IN A HERMETIC CERAMIC 14 PIN DIP. MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25°C UNLESS OTHERWISE SPECIFIED.

2N7334

Abstract: 2N7334 JANTX
Contextual Info: 2N7334 Qualified Levels: JAN, JANTX, and JANTXV QUAD N-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/597 DESCRIPTION This 2N7334 device is military qualified up to a JANTXV level for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power voltage

2N7334

Abstract: IRFG110
Contextual Info: 2N7334 IRFG110 MECHANICAL DATA Dimensions in mm inches 14 LEAD DUAL IN LINE QUAD N-CHANNEL POWER MOSFETS 19.507 ± 0.432 (0.768 ± 0.017) 0.457 ± 0.102 (0.018 ± 0.004) 14 6.426 ± 0.305 (0.253 ± 0.012) 9.525 ± 0.635 (0.375 ± 0.025) 2.134 (0.084) 8 BVDSS

2N7334

Abstract: IRFG110
Contextual Info: 2N7334 IRFG110 MECHANICAL DATA Dimensions in mm inches 14 LEAD DUAL IN LINE QUAD N CHANNEL POWER MOSFETS 19.507 ± 0.432 (0.768 ± 0.017) 0.457 ± 0.102 (0.018 ± 0.004) 6.426 ± 0.305 (0.253 ± 0.012) 9.525 ± 0.635 (0.375 ± 0.025) 2.134 (0.084) 14 8 1

Contextual Info: SENSITRON SEMICONDUCTOR 2N7334 TECHNICAL DATA DATA SHEET 691, REV. - HERMETIC POWER MOSFET N-CHANNEL QUAD DESCRIPTION: 100 VOLT, 1.0 AMP, 0.70 OHM MOSFET IN A HERMETIC CERAMIC 14 PIN DIP. MAXIMUM RATINGS RATING GATE TO SOURCE VOLTAGE CONTINUOUS DRAIN CURRENT

Contextual Info: International Government and Space HEXFET Power MOSFETs IlC T R e c H ffe r Hermetic Package N & P Channel Part Number b v DSS V RDS(on) (Ohms) lp @ Tr = 25°C <D@ TC = 100°C R thJC Max. Pd @ Case Tc = 25°C Outline (»> (A) (K/W) (W) Number (1) 0.6 17

TCA780

Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP

2N7334

Abstract: irfg9110 H24 SMD
Contextual Info: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130

2N7334

Abstract: IRFG110 JANTXV2N7334
Contextual Info: Data Sheet No. PD-9.396E INTERNATIONAL RECTIFIER I O R AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS IRF6110 8N 7334 JA N T X 2N 7334 JA N T X V 2N 7334 4 N-CHANNEL POWER MOSFETs 14 LEAD DUAL-IN-LINE QUAD CERAMIC SIDE BRAZED PACKAGE [REF: M IL-S -19500/5S7]

2N7334

Abstract: 2N7334 JANTX IRFG110 JANTX2N7334
Contextual Info: Data Sheet No. PD-9.396E INTERNATIONAL RECTIFIER | I « R | AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS 4 N-CHANNEL POWER MOSFETs 14 LEAD DUAL-IN-LINE QUAD CERAMIC SIDE BRAZED PACKAGE 100 Volt, 0.70 Ohm The HEXFET technology is the key to International

JANTX2N7334

Abstract: irfy430
Contextual Info: Government/ " Space Products ^ I,a“ 4“ D0lb171 b41 " INTERNATIONAL RECTIFIER H EXFET - INR other Products From IR bSE D High Reliability/Mil Qualified •d @ TC = 25°C ■d @ Tc = 100°C ■HhJC Max. W A (WW) 0.70 0.70 0.70 0.70 1.0 1.0 1.0 1.0 0.6

LE79Q2281

Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
Contextual Info: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security

Diode 400V 5A

Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM

2N7550

Abstract: 2N7549 2n7545 2N7476T1 smd 92112 2N7546 IRHNJ9130SCS 2N7471 2N7426 2N7468
Contextual Info: Hi-Rel Products Shortform Hermetic MOSFETs High Voltage MOSFETs for PFC and Primary Switch Applications Hi-Rel Components Schottky and HEXFRED Products Hi-Rel Schottky Diodes Hi-Rel HEXFRED  Diodes Hi-Rel Linear and Switching Regulators Fixed Voltage Regulators

2n7425

Abstract: 2n7389 2N7422 2N7433 2N7389 TO39 TO-254 2N7269 2n7391 to39 2N7262
Contextual Info: MIL-PRF-19500 QPL STATUS QPL Status Hex Size 1 1 1 1 2 2 3 3 3 3 3 3 3 3 4 4 5 5 5 5 CH N N N/P P N P N N P P N N P P N P N N N N Package TO39 M0036 MO036 MO036 TO39 TO39 TO3 TO39 TO3 TO39 TO39 TO257 TO257 TO39 TO254 TO254 TO3 TO254 TO254 TO254 March 1998

jantxv2n7224

Abstract: 2N7225
Contextual Info: Government and Space Designer's Manual Table of Contents Section & Page No. HEXFET IRF S E R IE S .1-3

Contextual Info: Data Sheet No. PD-9.396E I“R INTERNATIONAL RECTIFIER AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS 4 N-CHANNEL POWER MOSFETb [REF: M IL -S -19500/597] 14 LEAD DUAL-IN-LINE QUAD CERAMIC SIDE BRAZED PACKAGE 100 Vblt, 0.70 Ohm Product Summary <D The HEXFET technology is the key to International

smd 662

Abstract: 2N7422 2n7425 2N7426 2N7383 601 SMD 2N7389 IRHM9260 2N7422U 2N7219U
Contextual Info: QPL Product Matrix February, 1999 Government & Space Products Package TO39 LCC MO036 MO036 MO036 TO39 LCC TO39 LCC TO3 TO39 LCC TO3 TO39 LCC TO39 LCC TO257 TO257 TO39 LCC TO254 SMD-1 TO254 SMD-1 TO3 TO254 SMD-1 TO254 SMD-1 TO254 TO-254 SMD-1 TO-254 SMD-2 TO-254

2N6782 JANTX

Abstract: 2N6758 JANTX 2N6756 JANTX 2N6766 JANTX 2N6792 JANTX 2N6796U 60022 2N7236 2n6806 jantx 2N6770 JANTX
Contextual Info: Government / Space Products Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  Radiation-Hardened HEXFET Document # Pages Date IRH7054 90883 5 Oct-96 IRH7150 90677 13 Oct-96 IRH7250 90697 13 Oct-96 IRH7450SE

MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR

Abstract: 2N7334 MO-036AB
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 18 November 2010. MIL-PRF-19500/597E 18 August 2010 SUPERSEDING MIL-PRF-19500/597D 8 September 2003 * PERFORMANCE SPECIFICATION SHEET