IRFG110 Search Results

IRFG110

Abstract: JANTX2N7334 JANTXV2N7334 MO-036AB
Contextual Info: PD-90396H POWER MOSFET THRU-HOLE MO-036AB IRFG110 JANTX2N7334 JANTXV2N7334 REF:MIL-PRF-19500/597 100V, QUAD N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFG110 0.7 Ω 1.0A HEXFET® MOSFET technology is the key to International

2N7334

Abstract: IRFG110
Contextual Info: 2N7334 IRFG110 MECHANICAL DATA Dimensions in mm inches 14 LEAD DUAL IN LINE QUAD N-CHANNEL POWER MOSFETS 19.507 ± 0.432 (0.768 ± 0.017) 0.457 ± 0.102 (0.018 ± 0.004) 14 6.426 ± 0.305 (0.253 ± 0.012) 9.525 ± 0.635 (0.375 ± 0.025) 2.134 (0.084) 8 BVDSS

MO-036AB

Abstract: IRFG110 JANTX2N7334 JANTXV2N7334
Contextual Info: PD - 90396G POWER MOSFET THRU-HOLE MO-036AB IRFG110 JANTX2N7334 JANTXV2N7334 REF:MIL-PRF-19500/597 100V, QUAD N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFG110 RDS(on) 0.7 Ω ID 1.0A HEXFET® MOSFET technology is the key to International

036-AB

Contextual Info: PD - 90396F POWER MOSFET THRU-HOLE MO-036AB IRFG110 JANTX2N7334 JANTXV2N7334 REF:MIL-PRF-19500/597 100V, QUAD N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFG110 RDS(on) 0.7 Ω ID 1.0A HEXFET® MOSFET technology is the key to International

Contextual Info: PD-90396H POWER MOSFET THRU-HOLE MO-036AB IRFG110 JANTX2N7334 JANTXV2N7334 REF:MIL-PRF-19500/597 100V, QUAD N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFG110 0.7 Ω 1.0A HEXFET® MOSFET technology is the key to International

2N7334

Abstract: IRFG110
Contextual Info: 2N7334 IRFG110 MECHANICAL DATA Dimensions in mm inches 14 LEAD DUAL IN LINE QUAD N CHANNEL POWER MOSFETS 19.507 ± 0.432 (0.768 ± 0.017) 0.457 ± 0.102 (0.018 ± 0.004) 6.426 ± 0.305 (0.253 ± 0.012) 9.525 ± 0.635 (0.375 ± 0.025) 2.134 (0.084) 14 8 1

IRF460

Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Contextual Info: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,

IRFG1Z0

Abstract: K34 mosfet irf P-Channel MOSFET audio MOSFET IRF 638 HEXFET IRF IRFG110 IRFG9110 IRFG9113 036ac M0-036AC
Contextual Info: H E D | 4flS54SH □□Glt.Sb IN TERN ATIO N AL M | Data Sheet No. PD-9.397B R EC T IF IE R INTERNATIONAL. R E C T IF IE R T -V 3 -2 S HEXFET TRANSISTORS IRFG9110 4 P-CHANIMEL POWER MOSFETs IR F G 9 1 1 3 14 LEAD DUAL-IN-LINE QUAD CERAM IC S ID E BRAZED PACKAGE

IRFG014

Abstract: smd 9410 IRFH450 s 9413 9410 N-channel
Contextual Info: TOR HIGH-REL HEXFETs INTERNATIONAL. RECTIFIER - INTERNA TIO NAL RECTIFIER SbE D ' SSSHSa 00105b? T • TO-61 Isolated Package T - 3°l - 03 N-CHANNEL Types Vd s Iq cant Rd S(ON (max) Tq = 25°C |q m pulsed P0 max Case Style Bulletin V a A A W IRFH150

IRFG1Z3

Abstract: IRFF9132 IRFF9133 IRFF9211 IRFF9212 IRFF9221 TO213AA IRFG1Z0
Contextual Info: - 260 - m s tt f ñ 1- Vd s or Vd g % % ± £ Vg s fë CTa=Z5íG Pd Id * /CH 3 I gss min n A ) Vg s (V ) - 5 .5 25 ± 100 ± 20 -60 ± 2 0 -5. 5 25 ± 100 ± 20 P -200 ± 2 0 - 1 .6 15 ± 100 P -150 ± 2 0 -1. 6 IR P -200 ± 2 0 IR P -150 ± 2 0 % (V )

IRFM9034

Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261
Contextual Info: International Rectifier Government and Space Products BVDSS Part Number Channel V RDS(on) (Ω) PD @ TC = 25°C ID @ T =100°C C (A) ID @ T =25 C (A) Total Dose Rating Rads (Si) (W) Fax-on-Demand HEXFET Power MOSFETs to view a data sheet, click on the part number

Contextual Info: International Government and Space HEXFET Power MOSFETs IlC T R e c H ffe r Hermetic Package N & P Channel Part Number b v DSS V RDS(on) (Ohms) lp @ Tr = 25°C <D@ TC = 100°C R thJC Max. Pd @ Case Tc = 25°C Outline (»> (A) (K/W) (W) Number (1) 0.6 17

IRFG1Z0

Abstract: irfh25 irfg9110 IRFH150
Contextual Info: Government/ Space Products international ^ R e c tifie r Power MOSFETS High Reliability TO-258 - K N-Channel Part Number Iq Continuous Drain Current 25° Case Amps P q Max Power Dissipation (Watts) Case Outline Number (5) Notes 80 70 250 H20 (4) 30 30 15

irfm9034

Contextual Info: 1 I n t e r n a t io n a l R e c t if ie r Government and Space Products Pvt Numb« 2 (3) bvdss (Vote) RDS(on) (Ohms) ID« Tc*2T (Amps) 10« TC=100“ (Amps) Pd O Tc«25° (Watts) Fax-onOamand Number Case Styl«, (Cas* (Min») (1) HEXFET Power MOSFETs Hermetic Package, N- and P-Channel

2N7334

Abstract: IRFG110 JANTXV2N7334
Contextual Info: Data Sheet No. PD-9.396E INTERNATIONAL RECTIFIER I O R AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS IRF6110 8N 7334 JA N T X 2N 7334 JA N T X V 2N 7334 4 N-CHANNEL POWER MOSFETs 14 LEAD DUAL-IN-LINE QUAD CERAMIC SIDE BRAZED PACKAGE [REF: M IL-S -19500/5S7]

2N7335

Abstract: IRFG110 IRFG9110 JANTX2N7335 JANTXV2N7335
Contextual Info: Data Sheet No. PD-9.397E INTERNATIONAL RECTIFIER IÖ R IRFG9110 2N7335 JANTXSN7335 JANTXVSN7335 HEXFET TRANSISTORS 4P CHANNEL POWER MDBFETs 14 L E A D D U A L -IN -L IN E Q U A D C E R A M IC S ID E B R A Z E D PAC KAG E [REF: MIL-S-19500/599] Product Summary

Contextual Info: SHD234102Q SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 897, REV. - QUAD, N-CHANNEL POWER MOSFETs FEATURES: œ Avalanche Energy Rating œ Dynamic dv/dt Rating œ Hermetically Sealed œ For Automatic Insertion œ œ œ œ MAXIMUM RATINGS Lightweight Simple Drive Requirements

10RIA10

Abstract: HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF
Contextual Info: Index International Rectifier Government and Space Products Level of Quality Part Number Rectifiers Voltage Current CECC Issue Issue Assessment and CECC V (A) Specs Number Date 50 000 Screen Level Options Fax-on-Demand CECC-Qualifed, Europe Mfg. in Italy

2N7334

Abstract: 2N7334 JANTX IRFG110 JANTX2N7334
Contextual Info: Data Sheet No. PD-9.396E INTERNATIONAL RECTIFIER | I « R | AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS 4 N-CHANNEL POWER MOSFETs 14 LEAD DUAL-IN-LINE QUAD CERAMIC SIDE BRAZED PACKAGE 100 Volt, 0.70 Ohm The HEXFET technology is the key to International

HEXFETs FETs

Abstract: ALPS 102 lg motor DD ior 050a
Contextual Info: Data Sheet No. PD-9.397E INTERNATIONAL RECTIFIER IRFG911Q S N 7335 JA N T X 2N 7335 JA N T X V 2N 7335 HEXFET TRANSISTORS 4PCHANNEL POWER MOSFETs 14 LEAD DU AL-IN-LINE Q UAD C ER A M IC S ID E BRAZED PACKAGE [REF: MIL-S-19500/599] Product Summary -100 Volt, 1.4 Ohm (P-Channel)

JANTX2N7334

Abstract: irfy430
Contextual Info: Government/ " Space Products ^ I,a“ 4“ D0lb171 b41 " INTERNATIONAL RECTIFIER H EXFET - INR other Products From IR bSE D High Reliability/Mil Qualified •d @ TC = 25°C ■d @ Tc = 100°C ■HhJC Max. W A (WW) 0.70 0.70 0.70 0.70 1.0 1.0 1.0 1.0 0.6

MO-D36AB

Abstract: IRF9510 SEC IRF510 SEC 2n6845 jantx D 10.7 A IRF540 smd irf740 STAND FOR irfm9230 2N7237 JANTXV BC 542
Contextual Info: Government/ Space Products Products From ir Life, Power-Age, Environmental and Military Testing Capabilities — USA MIL-S-19500 Qualified Life Tests and Power-Age Capabilities A. H ig h te m p e ra tu re sto ra g e life te stin g up to 2 0 0 ° C . 0 . H T R B te st c a p a b ilitie s o v e r 2 5,00 0 p o s itio n s for V G S a n d for

IRF 544 N MOSFET

Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Contextual Info: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no

2N3810 LCC

Abstract: 2N2222A LCC1 ESCC 5202-001 MCA3201/2B ESCC 5204/002 bul54ah mp2835 ESCC 5201-002 silicon carbide JFET 2n918 die
Contextual Info: Space Products Semelab products and processes for space applications SEMELAB | experience and innovation 2 Contents 1. Introduction . 4 2. Programmes Supported . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5