HFA35HB60C Search Results

HFA35HB60C

Contextual Info: PD-20378A PRELIMINARY TM HEXFRED HFA35HB60C Ultrafast, Soft Recovery Diode Features VR = 600V ISOLATED BASE • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters • Hermetic • Electrically Isolated • Ceramic Eyelets

Contextual Info: PD - 20378B HFA35HB60C Ultrafast, Soft Recovery Diode FRED Features • • • • • • VR = 600V Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Electrically Isolated Ceramic Eyelets VF = 1.9V Qrr = 270nC

Contextual Info: International i?I] Rectifier HEXFRED P D -2 .3 7 8 Provisional Data Sheet HFA35HB60C 600V, 30A ULTRA FAST, SOFT RECOVERY DIODE Features: Major Ratings and Characteristics 600 V lF AV 30 A trr (per leg) 60 ns Qrr (per leg) 180 nC — — — — — —

Contextual Info: PD-20378C HFA35HB60C Ultrafast, Soft Recovery Diode FRED Features • • • • • • • VR = 600V Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Electrically Isolated Ceramic Eyelets ESD Rating: Class 3B per MIL-STD-750, Method 1020

Contextual Info: HFA35HB60C Diodes Center-Tapped Positive CC HS Rectifier I(O) Max.(A) Output Current30 V(RRM)(V) Rep.Pk.Rev. Voltage600 t(rr) Max.(s) Rev.Rec. Time60n @I(F) (A) (Test Condition)15 @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage2.0 @I(FM) (A) (Test Condition)30

HFA35HB60C

Abstract: IRFP250 pin out IRFP250
Contextual Info: PD - 20378B HFA35HB60C Ultrafast, Soft Recovery Diode FRED Features • • • • • • VR = 600V Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Electrically Isolated Ceramic Eyelets VF = 1.9V Qrr = 270nC

common anode 600v

Abstract: HFA35HB60C
Contextual Info: PD - 20378A PRELIMINARY TM HEXFRED HFA35HB60C Ultrafast, Soft Recovery Diode Features VR = 600V ISOLATED BASE • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters • Hermetic • Electrically Isolated • Ceramic Eyelets

IRF460

Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Contextual Info: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,

irf5n5210sc

Abstract: IRHNA57064SCS IRHM597260 irf5n5210 irhna597160scs irhf7110scs IRHG57110 IRHNA57264SESCS 35CLQ045SCS 12CLQ150SCS
Contextual Info: PD - 94246A IRHG567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET 4# TECHNOLOGY THRU-HOLE MO-036AB Product Summary Part Number IRHG567110 IRHG563110 IRHG567110 IRHG563110 Radiation Level RDS(on) 100K Rads (Si)

10RIA10

Abstract: HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF
Contextual Info: Index International Rectifier Government and Space Products Level of Quality Part Number Rectifiers Voltage Current CECC Issue Issue Assessment and CECC V (A) Specs Number Date 50 000 Screen Level Options Fax-on-Demand CECC-Qualifed, Europe Mfg. in Italy

IRHNA57064SCS

Abstract: IRHNJ597230SCS IRHNJ9130SCS IRHG6110SCS IRHY7434 IRHE57130SCS 8CLJQ045SCV IRHNJ57034SCS irfy9230 35CLQ045SCS
Contextual Info: PD - 94046B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ597230 200V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNJ597230 100K Rads (Si) IRHNJ593230 300K Rads (Si) RDS(on) 0.505Ω 0.505Ω ID -8.0A -8.0A SMD-0.5

IN1190A diode

Abstract: an 80771 hfa30pa60 SCR gate drive circuit A6F diode HFA120FA60 HF50A060 IN1190 DT93-1 HFA16PB120
Contextual Info: Revised 5/11/99 www.irf.com Rectifiers / Thyristors Catalog of Available Documents IR ProCenter Fax-On-Demand 310 252-7100 Standard Recovery Diodes Description Datasheets 1N1183 - IN1190 Series 1N1183A - IN1190A Series 1N1199A - 1N1206A Series 1N2054 thru 1N2068 Series

Contextual Info: Government and Space Other Products from IR HEXFRED Diodes Hermetic Packages 7 - 45 Amps Part VRWM Number fF AV @ TC (A) Typ Typ Case *F(AV)@TC v f m @ ! f m *R M @ VRWM RthJC (RRM 25°c(mA) 25°C (V) (°K/W) (A) (C) Trr Outline (nS) Number HFA40HF60 600

2N7550

Abstract: 2N7549 2n7545 2N7476T1 smd 92112 2N7546 IRHNJ9130SCS 2N7471 2N7426 2N7468
Contextual Info: Hi-Rel Products Shortform Hermetic MOSFETs High Voltage MOSFETs for PFC and Primary Switch Applications Hi-Rel Components Schottky and HEXFRED Products Hi-Rel Schottky Diodes Hi-Rel HEXFRED  Diodes Hi-Rel Linear and Switching Regulators Fixed Voltage Regulators

SCR gate drive circuit

Abstract: an 80771 IN1190 IN1190A IN1190A diode 20509 Diode 31DQ HFA25TB60 SD400N IR 31DQ 03
Contextual Info: Revised 8/27/98 www.irf.com Rectifiers / Thyristors Catalog of Availble Documents IR ProCenter Fax-On-Demand 310 252-7100 Standard Recovery Diodes Description Datasheets 1N1183 - IN1190 Series 1N1183A - IN1190A Series 1N1199A - 1N1206A Series 1N2054 thru 1N2068 Series

IRHNJ597230SCS

Abstract: international rectifier SMD 30CLJQ100SCS IRHNJ597034SCS IRHG6110SCS IRHNJ57234SESCS IRFE130SCX 35CLQ045SCS IRHNJ597130SCS IRHNJ7430SESCS
Contextual Info: PD - 94047A RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ597130 100V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNJ597130 100K Rads (Si) IRHNJ593130 300K Rads (Si) RDS(on) ID 0.205Ω -12.5A 0.205Ω -12.5A SMD-0.5