IRHE8230 Search Results

IRHE7230

Abstract: IRHE8230
Contextual Info: PD - 90713B IRHE7230 IRHE8230 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N CHANNEL MEGA RAD HARD 200Volt, 0.35Ω Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total

IRF460

Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Contextual Info: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,

Contextual Info: Data Sheet No. PD-9.713A INTERNATIONAL RECTIFIER AVALANCHE ENERGY AND dv/dt RATED IRHE7S30 HEXFET TRANSISTORS IRHE8S30 N-CHANNEL MEGA RAD HARD 200 Volt, 0.40i2, MEGA RAD HARD HEXFET International Rectifier’s MEGA RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability

IRFM9034

Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261
Contextual Info: International Rectifier Government and Space Products BVDSS Part Number Channel V RDS(on) (Ω) PD @ TC = 25°C ID @ T =100°C C (A) ID @ T =25 C (A) Total Dose Rating Rads (Si) (W) Fax-on-Demand HEXFET Power MOSFETs to view a data sheet, click on the part number

2N7334

Abstract: irfg9110 H24 SMD
Contextual Info: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130

10RIA10

Abstract: HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF
Contextual Info: Index International Rectifier Government and Space Products Level of Quality Part Number Rectifiers Voltage Current CECC Issue Issue Assessment and CECC V (A) Specs Number Date 50 000 Screen Level Options Fax-on-Demand CECC-Qualifed, Europe Mfg. in Italy

JANSR2N7262U

Abstract: IRHE3230 IRHE4230 IRHE7230 IRHE8230 LCC-18
Contextual Info: PD - 90713E IRHE7230 JANSR2N7262U 200V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT LCC-18 REF: MIL-PRF-19500/601 RAD-Hard HEXFET MOSFET TECHNOLOGY Product Summary Part Number Radiation Level IRHE7230 100K Rads (Si) IRHE3230 300K Rads (Si)

MO-D36AB

Abstract: IRF9510 SEC IRF510 SEC 2n6845 jantx D 10.7 A IRF540 smd irf740 STAND FOR irfm9230 2N7237 JANTXV BC 542
Contextual Info: Government/ Space Products Products From ir Life, Power-Age, Environmental and Military Testing Capabilities — USA MIL-S-19500 Qualified Life Tests and Power-Age Capabilities A. H ig h te m p e ra tu re sto ra g e life te stin g up to 2 0 0 ° C . 0 . H T R B te st c a p a b ilitie s o v e r 2 5,00 0 p o s itio n s for V G S a n d for

S3-12V

Contextual Info: Data Sheet No. PD-9.713A INTERNATIONAL RECTIFIER AVALANCHE ENERGY AND dv/dt RATED IRHE723Q HEXFET TRANSISTORS IRHE823Q N-CHANNEL MEGA RAD HARD 200 Volt, 0.40Í2, MEGA RAD HARD HEXFET International R ectifier’s MEGA RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability

2N6764 JANTX

Abstract: 91447 IR2113L
Contextual Info: Government / Space Products Catalog of Available Documents Revised 5/11/99 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  Radiation-Hardened HEXFET Description Datasheets IRH7054 IRH7130 IRH7150 IRH7230 IRH7250 IRH7250SE IRHF7330SE IRHF7430SE IRH7450

Contextual Info: PD - 90713F RADIATION HARDENED POWER MOSFET SURFACE MOUNT LCC-18 IRHE7230 JANSR2N7262U 200V, N-CHANNEL REF: MIL-PRF-19500/601 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHE7230 100K Rads (Si) IRHE3230 300K Rads (Si) RDS(on)

JANSR2N7262U

Abstract: IRHE3230 IRHE4230 IRHE7230 IRHE8230 LCC-18
Contextual Info: PD - 90713F RADIATION HARDENED POWER MOSFET SURFACE MOUNT LCC-18 IRHE7230 JANSR2N7262U 200V, N-CHANNEL REF: MIL-PRF-19500/601 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHE7230 100K Rads (Si) IRHE3230 300K Rads (Si) RDS(on)

H-17

Abstract: IRHE7230 IRHE8230
Contextual Info: Data Sheet No. PD-9.713A INTERNATIONAL RECTIFIER AVALANCHE ENERGY AND dv/dt RATED IRHE7S30 HEXFET TRANSISTORS IRHE823G N-CHANNEL MEGA RAD HARD 200 Volt, 0.40Í2, MEGA RAD HARD HEXFET International Rectifier's MEGA RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability

JANSR2N7261

Contextual Info: International lÜRectifier Government and Space HEXFET Power MOSFETs Radiation Hardened N & P Channel R tltJC Max. Pd@ Case rc = ioo°c TC = 25°C Outline A (K/W) (W) Number (1) (2) Pari b v dss Number (V) RDS(on) (Ohms) IRHE7110 100 0.60 3.1 2.0 11 11 IRHE8110

IRHE7110

Abstract: IRHE7130 IRHE7230 IRHE8110 IRHE8130 IRHE8230 IRHE9130 IRHN7054 IRHN7130 1RHF8130
Contextual Info: 4flss4s2 DQlblbb 2Û4 - From ,R HEXFET Paît Number bvdss V RDS(on) (OHMS) RAD HARD id @ Tq = 25°C •d @ Tc = 100”C RthJC Max. Pd @ Tc = 25-C (A) (A) (K/W) (W) IRHE7110 100 0.60 3.1 2.0 11 11 IRHE8110 100 0.60 3.1 2.0 11 11 22 IRHE7130 100 0.18 8.0 5.0

Contextual Info: I n t e r n a t io n a l R e c t if ie r Government and Space Products Part Numb« Wffl bvdss Vota ROS(on) (Ohm) ID* TC«25" 4A"P*) Iq O TolOO* (Amp») Total Dow Riling Rids (St) Pq O Tc»2P (Witts) Fu-ooDwnmd Numbtr _ _ _ _ _ _ _ -_ _ _ _ _ _ _ _ _ _ _